MBRB30H60CT-1G,
MBR30H60CTG,
MBRF30H60CTG,
MBRB30H60CTT4G,
NRVBB30H60CTT4G,
MBRJ30H60CTG
SWITCHMODE
Power Rectifier
60 V, 30 A
Features and Benefits
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SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES, 60 VOLTS
1
2, 4
3
4
4
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
Guard−Ring for Stress Protection
AEC−Q101 Qualified and PPAP Capable
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These are Pb−Free Devices*
Applications
12
3
I
2
PAK (TO−262)
CASE 418D
PLASTIC
STYLE 3
1
2
3
Power Supply
−
Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
TO−220
CASE 221A
PLASTIC
STYLE 6
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.5 Grams (I
2
PAK)
Weight (Approximately):
1.7 Grams (D
2
PAK)
Weight (Approximately):
1.9 Grams (TO−220 and TO−220FP)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260C Max. for 10 Seconds
TO−220
CASE 221D
STYLE 3
TO−220
CASE 221AH
D
2
PAK
CASE 418B
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
ORDERING AND MARKING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
January, 2012
−
Rev. 10
1
Publication Order Number:
MBRB30H60CT/D
MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
) T
C
= 159C
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
R
)
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
J
T
stg
dv/dt
W
AVAL
Value
60
Unit
V
15
30
260
−55
to +175
*55
to +175
10,000
350
> 400
> 8000
A
A
A
C
C
V/ms
mJ
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
(MBRB30H60CT−1G and MBR30H60CTG)
Junction−to−Case
Junction−to−Ambient
(MBRF30H60CTG and MBRJ30H60CTG)
Junction−to−Case
(MBRB30H60CTT4G and NRVBB30H60CTT4G)
Junction−to−Case
Symbol
Value
Unit
C/W
R
qJC
R
qJA
R
qJC
R
qJC
2.0
70
4.4
1.6
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 15 A, T
C
= 25C)
(I
F
= 15 A, T
C
= 125C)
(I
F
= 30 A, T
C
= 25C)
(I
F
= 30 A, T
C
= 125C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
C
= 25C)
(Rated DC Voltage, T
C
= 125C)
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
2.0%.
Symbol
v
F
Value
0.62
0.56
0.78
0.71
0.3
45
Unit
V
i
R
mA
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2
MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100
T
J
= 125C
10
T
J
= 125C
10
1
T
J
= 25C
1
T
J
= 25C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E−02
T
J
= 125C
I
R
, MAXIMUM REVERSE CURRENT (A)
1.0E−01
I
R
, REVERSE CURRENT (A)
1.0E−01
1.0E−02
1.0E−03
T
J
= 125C
1.0E−03
1.0E−04
1.0E−05
1.0E−06
0
T
J
= 25C
1.0E−04
1.0E−05
T
J
= 25C
10
20
30
40
50
60
1.0E−06
0
10
20
30
40
50
60
V
R
, REVERSE VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
I
F
, AVERAGE FORWARD CURRENT (A)
P
FO
, AVERAGE POWER DISSIPATION
(W)
30
25
20
15
10
5
0
100
dc
20
18
16
14
12
10
8
6
4
2
0
0
Figure 4. Maximum Reverse Current
SQUARE WAVE
SQUARE
DC
110
120
130
140
150
160
170
180
5
10
15
20
25
T
C
, CASE TEMPERATURE (C)
I
O
, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating for
MBRB30H60CT−1G, MBR30H60CTG,
MBRB30H60CTT4G and NRVBB30H60CTT4G
Figure 6. Forward Power Dissipation
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MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
I
F
, AVERAGE FORWARD CURRENT (A)
30
25
20
15
10
5
0
100
dc
C, CAPACITANCE (pF)
10,000
T
J
= 25C
SQUARE WAVE
1000
110
120
130
140
150
160
170
180
100
0
10
20
30
40
50
60
T
C
, CASE TEMPERATURE (C)
V
R
, REVERSE VOLTAGE (V)
Figure 8. Current Derating for
MBRF30H60CTG and MBRJ30H60CTG
Figure 7. Capacitance
R(t), TRANSIENT THERMAL RESISTANCE
10
1
D = 0.5
0.2
0.1
0.05
0.1
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
10
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
1000
Figure 9. Thermal Response Junction−to−Case for MBRB30H60CT−1G, MBR30H60CTG,
MBRB30H60CTT4G and NVRBB30H60CTT4G
R(t), TRANSIENT THERMAL RESISTANCE
10
D = 0.5
1
0.2
0.1
0.05
0.01
P
(pk)
0.01
SINGLE PULSE
0.001
0.000001
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
10
100
1000
0.1
Figure 10. Thermal Response Junction−to−Case for MBRF30H60CTG and MBRJ30H60CTG
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MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
+V
DD
I
L
10 mH COIL
V
D
BV
DUT
MERCURY
SWITCH
I
D
I
D
V
DD
t
0
t
1
t
2
t
DUT
S
1
I
L
Figure 11. Test Circuit
Figure 12. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 11 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S
1
is closed at t
0
the current in the inductor I
L
ramps
up linearly; and energy is stored in the coil. At t
1
the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV
DUT
and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t
2
.
By solving the loop equation at the point in time when S
1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
DD
power supply while the diode is in
breakdown (from t
1
to t
2
) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
DD
voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S
1
was closed,
Equation (2).
EQUATION (1):
BV
2
DUT
W
[
1 LI LPK
AVAL
2
BV
V
DUT DD
EQUATION (2):
2
W
[
1 LI LPK
AVAL
2
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