BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
●
●
●
Rugged Triple-Diffused Planar Construction
9 A Continuous Collector Current
1000 Volt Blocking Capability
B
SOT-93 PACKAGE
(TOP VIEW)
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (V
BE
= -2.5 V)
Collector-emitter voltage (R
BE
= 10
Ω)
Collector-emitter voltage (I
B
= 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
≤
5 ms, duty cycle
≤
2%.
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
SYMBOL
V
CEX
V
CER
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
VALUE
850
1000
850
1000
400
450
9
15
3
6
120
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
W
°C
°C
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V
CEO(sus)
V
(BR)EBO
Collector-emitter
sustaining voltage
Base-emitter
breakdown voltage
Collector-emitter
cut-off current
I
C
= 200 mA
I
E
=
50 mA
TEST CONDITIONS
L = 25 mH
I
C
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
R
BE
= 10
Ω
R
BE
= 10
Ω
R
BE
= 10
Ω
R
BE
= 10
Ω
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
I
C
= 0
5A
8A
5A
0.5 A
(see Notes 3 and 4)
(see Notes 3 and 4)
f=
1 MHz
8
105
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
(see Note 2)
(see Note 3)
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
MIN
400
450
7
30
0.15
0.15
1.5
1.5
0.4
0.4
3.0
3.0
1
1.5
3.0
1.6
mA
V
V
MHz
pF
mA
mA
TYP
MAX
UNIT
V
V
V
CE
= 850 V
I
CES
V
CE
= 1000 V
V
CE
= 850 V
V
CE
= 1000 V
V
CE
= 850 V
I
CER
Collector-emitter
cut-off current
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
V
CE
= 1000 V
V
CE
= 850 V
V
CE
= 1000 V
I
EBO
V
CE(sat)
V
BE(sat)
f
t
C
ob
V
EB
=
I
B
=
I
B
=
I
B
=
V
CE
=
V
CB
=
5V
1A
2.5 A
1A
10 V
20 V
f = 0.1 MHz
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
Junction to case thermal resistance
MIN
TYP
MAX
1
UNIT
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
s
t
f
†
TEST CONDITIONS
I
C
= 5 A
V
CC
= 150 V
I
B(on)
= 1 A
†
MIN
I
B(off)
= -1 A
TYP
MAX
1.0
3.0
0.8
UNIT
µs
µs
µs
Turn on time
Storage time
Fall time
(see Figures 1 and 2)
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
t
sv
t
fi
Voltage storage time
Current fall time
I
C
= 5 A
T
C
= 100°C
TEST CONDITIONS
I
B(on)
= 1 A
(see Figures 3 and 4)
†
MIN
V
BE(off)
= -5 V
TYP
MAX
4.0
0.4
UNIT
µs
µs
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
+25 V
BD135
120
Ω
680
µ
F
100
Ω
V cc V= 250 V
CC
T
V1
tp
47
Ω
100
µ
F
TUT
15
Ω
V1
100
Ω
BD136
82
Ω
680
µ
F
t
p
= 20
µs
Duty cycle = 1%
V
1
= 15 V, Source Impedance = 50
Ω
Figure 1. Resistive-Load Switching Test Circuit
C
IC
A - B = t
d
B - C = t
r
E - F = t
f
D - E = t
s
A - C = t
on
D - F = t
off
B
90%
90%
E
10%
10%
F
0%
90%
IB
D
dI
B
≥
2 A/µs
dt
I B(on)
A
10%
0%
I B(off)
Figure 2. Resistive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
33
Ω
+5V
D45H11
BY205-400
BY205-400
33
Ω
1 pF
RB
(on)
180
µH
vcc
V Gen
68
Ω
1 k
Ω
0.02
µF
+5V
1 k
Ω
2N2222
TUT
BY205-400
Vclamp = 400 V
270
Ω
BY205-400
1 k
Ω
2N2904
5X BY205-400
Adjust pw to obtain I
C
47
Ω
For I
C
< 6 A
For I
C
≥
6 A
V
CC
= 50 V
V
CC
= 100 V
100
Ω
D44H11
V
BE(off)
Figure 3. Inductive-Load Switching Test Circuit
I B(on)
A - B = t
sv
B - C = t
rv
D - E = t
fi
E - F = t
ti
B - E = t
xo
IB
A (90%)
Base Current
C
90%
V
CE
B
10%
Collector Voltage
D (90%)
E (10%)
I
C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t
r
< 15 ns, R
in
> 10
Ω,
C
in
< 11.5 pF.
B. Resistors must be noninductive types.
Figure 4. Inductive-Load Switching Waveforms
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
100
V
CE
= 5 V
TCP762AA
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
5·0
TCP762AB
h
FE
- Typical DC Current Gain
T
C
= 125°C
T
C
= 25°C
T
C
= -65°C
4·0
T
C
= 25°C
I
C
= 8 A
I
C
= 6 A
I
C
= 4 A
I
C
= 2 A
3·0
10
2·0
1·0
1·0
0·1
0
1·0
I
C
- Collector Current - A
10
0
0·5
1·0
1·5
2·0
2·5
I
B
- Base Current - A
Figure 5.
Figure 6.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0·5
TCP762AK
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
10
TCP762AC
0·4
I
CES
- Collector Cut-off Current - µA
T
C
= 100°C
I
C
= 8 A
I
C
= 6 A
I
C
= 4 A
I
C
= 2 A
1·0
BUV47A
V
CE
= 1000 V
0·1
BUV47
V
CE
= 850 V
0·01
0·3
0·2
0·1
0
0
0·5
1·0
1·5
2·0
2·5
I
B
- Base Current - A
0·001
-80 -60 -40 -20
0
20
40
60
80 100 120 140
T
C
- Case Temperature - °C
Figure 7.
Figure 8.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5
嵌入式系统
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