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ALD110908PAL: 产品描述MOSFET Dual EPAD(R) N-Ch; 产品类别半导体分立半导体; 文件大小102KB，共12页; 制造商Advanced Linear Devices; 标准

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ALD110908PAL概述

MOSFET Dual EPAD(R) N-Ch

ALD110908PAL规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Advanced Linear Devices
产品种类 Product Category	MOSFET
Shipping Restrictions	This product may require additional documentation to export from the United States.
RoHS	Details
技术 Technology	Si
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	PDIP-8
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	10 V
Id - Continuous Drain Current	12 mA
Rds On - Drain-Source Resistance	500 Ohms
Vgs - Gate-Source Voltage	10.6 V
最小工作温度 Minimum Operating Temperature	0 C
最大工作温度 Maximum Operating Temperature	+ 70 C
Configuration	Dual
Pd-功率耗散 Pd - Power Dissipation	500 mW (1/2 W)
Channel Mode	Depletion
系列 Packaging	Tube
产品 Product	MOSFET Small Signal
Transistor Type	2 N-Channel
类型 Type	MOSFET
Forward Transconductance - Min	0.0014 S
工厂包装数量 Factory Pack Quantity	50
Typical Turn-Off Delay Time	10 ns
Typical Turn-On Delay Time	10 ns
单位重量 Unit Weight	0.032805 oz

ALD110908PAL相似产品对比

	ALD110908PAL	ALD110908ASAL	ALD110808ASCL	ALD110808SCL
描述	MOSFET Dual EPAD(R) N-Ch	MOSFET Dual EPAD(R) N-Ch	MOSFET Quad EPAD(R) N-Ch	MOSFET Quad EPAD(R) N-Ch
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value
制造商 Manufacturer	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices
产品种类 Product Category	MOSFET	MOSFET	MOSFET	MOSFET
Shipping Restrictions	This product may require additional documentation to export from the United States.	This product may require additional documentation to export from the United States.	This product may require additional documentation to export from the United States.	This product may require additional documentation to export from the United States.
RoHS	Details	Details	Details	Details
技术 Technology	Si	Si	Si	Si
安装风格 Mounting Style	Through Hole	SMD/SMT	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	PDIP-8	SOIC-8	SOIC-16	SOIC-16
Number of Channels	2 Channel	2 Channel	4 Channel	4 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	10 V	10 V, 10 V	10 V	10 V
Id - Continuous Drain Current	12 mA	12 mA, 12 mA	12 mA	12 mA
Rds On - Drain-Source Resistance	500 Ohms	500 Ohms, 500 Ohms	500 Ohms	500 Ohms
Vgs - Gate-Source Voltage	10.6 V	10.6 V, 10.6 V	10.6 V	10.6 V
最小工作温度 Minimum Operating Temperature	0 C	0 C	0 C	0 C
最大工作温度 Maximum Operating Temperature	+ 70 C	+ 70 C	+ 70 C	+ 70 C
Configuration	Dual	Dual	Quad	Quad
Pd-功率耗散 Pd - Power Dissipation	500 mW (1/2 W)	500 mW (1/2 W)	500 mW (1/2 W)	500 mW (1/2 W)
Channel Mode	Depletion	Enhancement	Depletion	Depletion
系列 Packaging	Tube	Tube	Tube	Tube
产品 Product	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal
Transistor Type	2 N-Channel	2 N-Channel	4 N-Channel	4 N-Channel
类型 Type	MOSFET	MOSFET	MOSFET	MOSFET
工厂包装数量 Factory Pack Quantity	50	50	50	50
Typical Turn-Off Delay Time	10 ns	10 ns, 10 ns	10 ns	10 ns
Typical Turn-On Delay Time	10 ns	10 ns, 10 ns	10 ns	10 ns
单位重量 Unit Weight	0.032805 oz	0.002998 oz	0.023492 oz	0.023492 oz
Forward Transconductance - Min	0.0014 S	-	0.0014 S	0.0014 S

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