MBR25xxCT, MBRF25xxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
TO-220AB
ITO-220AB
FEATURES
Power pack
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
•
•
•
•
•
•
•
2
MBR2535CT
MBR2545CT
PIN 1
PIN 3
PIN 2
CASE
3
1
MBRF2545CT
PIN 1
PIN 3
PIN 2
2
3
1
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Diode variation
2 x 12.5 A
35 V, 45 V
150 A
0.73 V at 30 A
150 °C
TO-220AB, ITO-220AB
Common cathode
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB
Epoxy meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
= 130 °C
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
E
RSM
V
C
dV/dt
T
J
T
STG
V
AC
MBR2535CT
35
35
35
25
12.5
150
A
1.0
25
25
10 000
-65 to +150
-65 to +175
1500
mJ
kV
V/μs
°C
V
MBR2545CT
45
45
45
A
V
UNIT
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
Peak repetitive reverse surge current per diode
at t
p
= 2 μs, 1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
per diode
Electrostatic discharge capacitor voltage human body model: C = 100 pF,
R = 1.5 k
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Revision: 28-Nov-17
Document Number: 88675
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR25xxCT, MBRF25xxCT
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
T
C
= 25 °C
I
F
= 30 A
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
I
R (1)
40
SYMBOL
V
F (1)
0.73
0.2
mA
MBR2535CT
0.82
MBR2545CT
UNIT
V
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
per diode
Maximum instantaneous reverse current at
blocking voltage per diode
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance from junction to case per diode
SYMBOL
R
JC
MBR
1.5
MBRF
4.5
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-220AB
(1)
PREFERRED P/N
MBR2545CT-E3/45
(1)
MBRF2545CT-E3/45
MBR2545CT-E3/4W
UNIT WEIGHT (g)
1.85
1.99
1.85
PACKAGE CODE
45
45
4W
BASE QUANTITY
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Note
35 V device available in TO-220AB package only
Revision: 28-Nov-17
Document Number: 88675
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR25xxCT, MBRF25xxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
C
= 25 °C unless otherwise noted)
30
100
Instantaneous Reverse Current (mA)
Resistive or Inductive Load
Average Forward Current (A)
24
10
T
J
= 125 °C
1
18
12
0.1
T
J
= 75 °C
6
0.01
T
J
= 25 °C
0.001
0
20
40
60
80
100
0
0
50
100
150
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
150
10 000
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)
100
Junction Capacitance (pF)
125
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
75
1000
50
25
0
1
10
100
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
100
T
J
= 150 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
T
J
= 25 °C
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
10
1
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 28-Nov-17
Document Number: 88675
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR25xxCT, MBRF25xxCT
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
Vishay General Semiconductor
0.415 (10.54) max.
0.370 (9.40)
0.360 (9.14)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2 3
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
ITO-220AB
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
1
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
PIN
2
3
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
7° REF.
0.110 (2.79)
0.100 (2.54)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Revision: 28-Nov-17
Document Number: 88675
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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