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PLZ18C-G3/H

产品描述Zener Diodes Vz @Izt 17.42-18.33V Ippm 27.1V Max
产品类别分立半导体    二极管   
文件大小149KB,共9页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

PLZ18C-G3/H概述

Zener Diodes Vz @Izt 17.42-18.33V Ippm 27.1V Max

PLZ18C-G3/H规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Vishay(威世)
包装说明SMF, 2 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time13 weeks
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-219AC
JESD-30 代码R-PDSO-F2
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量2
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
最大功率耗散0.96 W
参考标准IEC-61000-4-2, 4-5
标称参考电压18 V
表面贴装YES
技术ZENER
端子面层Matte Tin (Sn)
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间30
最大电压容差2.55%
工作测试电流10 mA
Base Number Matches1

文档预览

下载PDF文档
PLZ Series
www.vishay.com
Vishay Semiconductors
Zener Diodes Permitting 500 mW Power Dissipation
FEATURES
Sillicon planar Zener diodes, ultra small
Low profile DO-219AC (MicroSMF) package
Low leakage current
Excellent stability
High temperature soldering: 260 °C / 10 s at
terminals
Wave and reflow solderable (reflow as per
JPC / JEDEC
®
J-STD 020) (double wave as
per IEC 61760-1)
AEC-Q101 qualified available
Base P/N-G3 - RoHS-compliant, green, industrial grade
Base P/N-HG3 - RoHS-compliant, green, AEC-Q101 qualified
ESD immunity acc. IEC 61000-4-2 acc. to part table
Surge performance acc. to part table
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
2
20278
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.0 to 39
5 to 20
Pulse current
Single
UNIT
V
mA
ORDERING INFORMATION
DEVICE NAME
PLZ-Series
PLZ-Series
ORDERING CODE
Part number-G3/H
Part number-HG3/H
TAPED UNITS PER REEL
4500 per 7" reel (8 mm tape)
MINIMUM ORDER QUANTITY
22 500 / box
PACKAGE
PACKAGE NAME
DO-219AC (MicroSMF)
WEIGHT
4.8 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY LEVEL
MSL level 1 (according J-STD-020)
SOLDERING CONDITIONS
260 °C / 10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Power dissipation
Power dissipation
Non-repetitive peak surge power dissipation
Z-current
Junction temperature
Storage temperature range
TEST CONDITION
Mounted on FR4 board 50 mm x 50 mm x 1.6 mm,
solder land 10 mm x 10 mm, T
amb
= 85 °C
Mounted on FR4 board 50 mm x 50 mm x 1.6 mm,
solder land 10 mm x 10 mm, T
amb
= 25 °C
Mounted on FR4 board with recommended soldering
footpads (reflow)
t
p
= 8/20 μs acc. IEC 61000-4-5 (PLZ5V1A to PLZ39D)
t
p
= 8/20 μs acc. IEC 61000-4-5 (PLZ2V0A to PLZ4V7C)
SYMBOL
P
tot
P
tot
P
tot
P
ZSM
P
ZSM
I
Z
T
j
T
stg
VALUE
500
960
340
100
70
P
tot
/V
Z
150
-55 to +150
W
W
mA
°C
mW
UNIT
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Typ. thermal resistance junction to ambient air
Typ. thermal resistance junction to lead
TEST CONDITION
Mounted on FR4 board 50 mm x 50 mm x 1.6 mm,
solder land 10 mm x 10 mm
SYMBOL
R
thJA
R
thJL
VALUE
130
40
UNIT
K/W
K/W
ELECTRICAL SPECIFICATIONS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward Voltage
TEST CONDITION
I
F
= 10 mA
SYMBOL
V
F
MIN.
TYP.
0.8
MAX.
0.9
UNIT
V
Rev. 1.2. 29-Nov-16
Document Number: 84830
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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