NTF5P03, NVF5P03
Power MOSFET
-5.2 A, -30 V
P−Channel SOT−223
Features
http://onsemi.com
•
•
•
•
•
•
•
•
•
•
•
•
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature SOT−223 Surface Mount Package
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
−
NVF5P03T3G
These Devices are Pb−Free and are RoHS Compliant
DC−DC Converters
Power Management
Motor Controls
Inductive Loads
Replaces MMFT5P03HD
−5.2
AMPERES,
−30
VOLTS
R
DS(on)
= 100 mW
S
G
Applications
D
P−Channel MOSFET
4
1
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
AYM
5P03
G
G
1
Gate
2
3
Drain Source
2
3
SOT−223
CASE 318E
STYLE 3
A
= Assembly Location
Y
= Year
M
= Date Code
5P03 = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTF5P03T3G
NVF5P03T3G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
†
4000 / Tape &
Reel
4000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
August, 2013
−
Rev. 6
1
Publication Order Number:
NTF5P03T3/D
NTF5P03, NVF5P03
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Negative sign for P−Channel devices omitted for clarity
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 1.0 MW)
Gate−to−Source Voltage
−
Continuous
1 sq in
FR−4 or G−10 PCB
10 seconds
Minimum
FR−4 or G−10 PCB
10 seconds
Thermal Resistance
−
Junction to Ambient
Total Power Dissipation @ T
A
= 25°C
Linear Derating Factor
Drain Current
−
Continuous @ T
A
= 25°C
Continuous @ T
A
= 70°C
Pulsed Drain Current (Note 1)
Thermal Resistance
−
Junction to Ambient
Total Power Dissipation @ T
A
= 25°C
Linear Derating Factor
Drain Current
−
Continuous @ T
A
= 25°C
Continuous @ T
A
= 70°C
Pulsed Drain Current (Note 1)
Symbol
V
DSS
V
DGR
V
GS
R
THJA
P
D
I
D
I
D
Max
−30
−30
±
20
40
3.13
25
−5.2
−4.1
−26
80
1.56
12.5
−3.7
−2.9
−19
−
55 to 150
250
Unit
V
V
V
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
°C
mJ
I
DM
R
THJA
P
D
I
D
I
D
I
DM
T
J
, T
stg
E
AS
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy
−
Starting T
J
= 25°C
(V
DD
=
−30
Vdc, V
GS
=
−10
Vdc, Peak I
L
=
−12
Apk, L = 3.5 mH, R
G
= 25
W)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Repetitive rating; pulse width limited by maximum junction temperature.
http://onsemi.com
2
NTF5P03, NVF5P03
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Cpk
≥
2.0) (Notes 2 and 4)
(V
GS
= 0 Vdc, I
D
=
−250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
=
−24
Vdc, V
GS
= 0 Vdc)
(V
DS
=
−24
Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
Gate−Body Leakage Current
(V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
V
(BR)DSS
−30
−
−
−
−
−
−28
−
−
−
−
−
−1.0
−25
±
100
Vdc
mV/°C
mAdc
I
DSS
I
GSS
nAdc
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage (Cpk
≥
2.0) (Notes 2 and 4)
(V
DS
= V
GS
, I
D
=
−250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Cpk
≥
2.0) (Notes 2 and 4)
(V
GS
=
−10
Vdc, I
D
=
−5.2
Adc)
(V
GS
=
−4.5
Vdc, I
D
=
−2.6Adc)
Forward Transconductance (Note 2)
(V
DS
=
−15
Vdc, I
D
=
−2.0
Adc)
V
GS(th)
−1.0
−
−
2.0
−1.75
3.5
76
107
3.9
−3.0
−
100
150
−
Vdc
mV/°C
mW
R
DS(on)
g
fs
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
=
−25
Vdc, V
GS
= 0 V,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
500
153
58
950
440
140
pF
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
=
−24
Vdc, I
D
=
−4.0
Adc,
V
GS
=
−10
Vdc) (Note 2)
(V
DD
=
−15
Vdc, I
D
=
−2.0
Adc,
V
GS
=
−10
Vdc,
R
G
= 6.0
W)
(Note 2)
(V
DD
=
−15
Vdc, I
D
=
−4.0
Adc,
V
GS
=
−10
Vdc,
R
G
= 6.0
W)
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
Q3
−
−
−
−
−
−
−
−
−
−
−
−
10
33
38
20
16
45
23
24
15
1.6
3.5
2.6
24
48
94
92
38
110
60
80
38
−
−
−
nC
ns
ns
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
=
−4.0
Adc, V
GS
= 0 Vdc)
(I
S
=
−4.0
Adc, V
GS
= 0 Vdc,
T
J
= 125°C) (Note 2)
(I
S
=
−4.0
Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 2)
V
SD
−
−
−
−
−
−
−1.1
−0.89
34
20
14
0.036
−1.5
−
−
−
−
−
mC
Vdc
Reverse Recovery Time
t
rr
t
a
t
b
Q
RR
ns
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values.
Max limit
*
Typ
Cpk
+
3 SIGMA
http://onsemi.com
3
NTF5P03, NVF5P03
TYPICAL ELECTRICAL CHARACTERISTICS
5
4
3
2
1
V
GS
=
−2.7
V
0
0
0.2 0.4 0.6 0.8 1
1.2 1.4 1.6 1.8
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (V)
2
−6
V
−8
V
−10
V
10
−3.7
V
T
J
= 25°C
−I
D,
DRAIN CURRENT (A)
9
8
7
6
5
4
3
2
1
0
2
T
J
= 100°C
T
J
=
−55°C
2.5
3
3.5
4
4.5
−V
GS,
GATE−TO−SOURCE VOLTAGE (V)
5
T
J
= 25°C
V
DS
≥
−10
V
−3.9
V
−I
D,
DRAIN CURRENT (A)
−4.1
V
−4.3
V
−4.5
V
−3.5
V
−3.1
V
−2.8
V
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
3
4
5
6
7
8
9
I
D
=
−5.2
A
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.200
0.180
0.160
0.140
0.120
0.100
0.080
0.060
0.040
0.020
0.000
1
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
=
−4.5
V
V
GS
=
−10
V
10
2.5
4
5.5
7
8.5
10
−V
GS,
GATE−TO−SOURCE VOLTAGE (V)
−I
D,
DRAIN CURRENT (A)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.65
1.55
1.45
1.35
1.25
1.15
1.05
0.95
0.85
0.75
0.65
−50
10
−25
0
25
50
75
100
125
150
I
D
=
−5.2
A
V
GS
=
−10
V
−I
DSS
, LEAKAGE (nA)
1000
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
V
GS
= 0 V
100
T
J
= 125°C
T
J
= 100°C
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
http://onsemi.com
4
NTF5P03, NVF5P03
TYPICAL ELECTRICAL CHARACTERISTICS
T
J
= 25°C
V
GS
= 0 V
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
150
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1000
900
C, CAPACITANCE (pF)
800
700
600
500
400
300
200
100
0
0
5
C
oss
C
rss
10
15
20
25
DRAIN−TO−SOURCE VOLTAGE (V)
30
C
iss
12.5
−V
DS
10
7.5
5.0
2.5
Q
T
25
20
15
10
I
D
=
−2
A
T
J
= 25°C
5
0
60
−V
GS
Q
1
Q
2
0
0
10
20
30
40
50
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
4.00
−I
S
, SOURCE CURRENT (A)
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
0.5
0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
V
GS
= 0 V
T
J
= 25°C
1000
V
DD
=
−15
V
I
D
=
−4.0
A
V
GS
=
−10
V
t
d(off)
t, TIME (ns)
100
t
f
t
r
10
t
d(on)
1
10
R
G
, GATE RESISTANCE (W)
100
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
100
−I
D
, DRAIN CURRENT (AMPS)
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
250
Figure 10. Diode Forward Voltage versus Current
I
D
=
−6
A
200
150
100
50
0
25
50
75
100
125
T
J
, STARTING JUNCTION TEMPERATURE (°C)
10
1
dc
10 ms
1 ms
0.1
100
ms
10
ms
0.01
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
