PD - 96988A
AUTOMOTIVE MOSFET
IRF2903Z
IRF2903ZS
IRF2903ZL
HEXFET
®
Power MOSFET
D
Features
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
D
V
DSS
= 30V
R
DS(on)
= 2.4mΩ
G
S
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
I
D
= 75A
D
D
G
D
S
G
D
S
G
D
S
TO-220AB
IRF2903Z
G
D
2
Pak
IRF2903ZS
D
TO-262
IRF2903ZL
S
Absolute Maximum Ratings
Gate
Drain
Max.
260
180
75
1020
290
2.0
± 20
Source
Units
A
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Avalanche Current
W
W/°C
V
mJ
A
mJ
d
Single Pulse Avalanche Energy Tested Value
Ã
h
290
820
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
i
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
y
y
k
Parameter
Typ.
Max.
0.51
–––
62
40
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
ik
i
jk
–––
0.50
–––
–––
Junction-to-Ambient (PCB Mount, steady state)
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1
8/26/05
IRF2903Z/S/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
30
–––
–––
2.0
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.021
1.9
–––
–––
–––
–––
–––
–––
160
51
58
24
100
48
37
4.5
7.5
6320
1980
1100
5930
2010
3050
–––
–––
2.4
4.0
–––
20
250
200
-200
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V/°C
mΩ
V
S
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 10V, I
D
= 75A
V
DS
= 30V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 75A
V
DS
= 24V
V
GS
= 10V
V
DD
= 15V
I
D
= 75A
R
G
= 3.2
Ω
V
GS
= 10V
e
nC
e
e
ns
nH
pF
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 24V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 24V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
34
29
75
A
1020
1.3
51
44
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 15V
di/dt = 100A/µs
Ã
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
e
2
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IRF2903Z/S/L
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
100
10
4.5V
≤
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
1000
4.5V
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
240
Gfs, Forward Transconductance (S)
TJ = 25°C
200
160
120
80
40
0
0
20
40
60
80 100 120 140 160 180
ID, Drain-to-Source Current (A)
TJ = 175°C
ID, Drain-to-Source Current
(Α)
100.0
TJ = 175°C
10.0
1.0
TJ = 25°C
VDS = 25V
≤
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VDS = 10V
380µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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3
IRF2903Z/S/L
12000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
ID= 75A
VGS, Gate-to-Source Voltage (V)
VDS = 24V
VDS= 15V
10000
16
C, Capacitance (pF)
8000
Ciss
6000
12
8
4000
Coss
2000
4
Crss
0
1
10
100
0
0
40
80
120
160
200
240
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1msec
100.0
TJ = 175°C
1000
100µsec
100
10msec
10.0
TJ = 25°C
1.0
10
LIMITED BY PACKAGE
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1.0
10.0
100.0
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0.1
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF2903Z/S/L
300
LIMITED BY PACKAGE
250
ID , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
2.0
ID = 75A
VGS = 10V
200
150
100
50
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
1.5
(Normalized)
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
Ri (°C/W)
τi
(sec)
0.08133 0.000044
0.2408
0.000971
0.18658 0.008723
τ
1
0.01
τ
2
Ci=
τi/Ri
Ci
τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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