IRGP4266DPbF
IRGP4266D-EPbF
V
CES
= 650V
I
C
= 90A, T
C
=100°C
t
SC
5.5µs,
T
J(max)
= 175°C
G
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
V
CE(ON)
typ. = 1.7V @ I
C
= 75A
Applications
Industrial Motor Drive
UPS
Solar Inverters
Welding
E
G
C
E
G
C
E
n-channel
G
Gate
IRGP4266DPbF
TO-247AC
C
Collector
IRGP4266D-EPbF
TO-247AD
E
Emitter
Features
Low V
CE(ON)
and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive V
CE (ON)
Temperature Co-efficient
Base part number
IRGP4266DPbF
IRGP4266D-EPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
=20V
Clamped Inductive Load Current, V
GE
=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Package Type
TO-247AC
TO-247AD
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4266DPbF
IRGP4266D-EPbF
Max.
650
140
90
300
300
68
42
±20
455
230
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.33
1.1
–––
–––
Units
°C/W
1
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)CES
/T
J
V
CE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Min.
650
—
Typ.
—
0.65
Max.
—
—
Units
Conditions
V
V
GE
= 0V, I
C
= 100µA
V/°C V
GE
= 0V, I
C
= 5.0mA (25°C-175°C)
—
1.7
—
2.2
Gate Threshold Voltage
5.5
—
V
GE(th)
Threshold Voltage Temperature Coeff.
—
-20
V
GE(th)
/T
J
gfe
Forward Transconductance
—
47
—
1.0
I
CES
Collector-to-Emitter Leakage Current
—
1.0
—
—
I
GES
Gate-to-Emitter Leakage Current
—
2.1
Diode Forward Voltage Drop
V
F
—
1.7
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement
.
2.1
V
I
C
= 75A, V
GE
= 15V, T
J
= 25°C
—
I
C
= 75A, V
GE
= 15V, T
J
= 175°C
7.7
V
V
CE
= V
GE
, I
C
= 2.1mA
—
mV/°C V
CE
= V
GE
, I
C
= 2.1mA (25°C-150°C)
—
S
V
CE
= 50V, I
C
= 75A, PW = 20µs
35
µA V
GE
= 0V, V
CE
= 650V
mA V
GE
= 0V, V
CE
= 650V, T
J
= 175°C
—
±100
nA V
GE
= ±20V
2.7
V
I
F
= 75A
—
I
F
= 75A, T
J
= 175°C
Max Units
Conditions
210
I
C
= 75A
nC V
GE
= 15V
80
V
CC
= 400V
90
3.4
3.0
mJ I
C
= 75A, V
CC
= 400V, V
GE
=15V
6.4
R
G
= 10, L = 200µH, T
J
= 25°C
70
Energy losses include tail & diode
90
ns reverse recovery
225
80
—
—
—
—
—
—
—
—
—
—
mJ
I
C
= 75A, V
CC
= 400V, V
GE
=15V
R
G
= 10, L = 200µH, T
J
= 175°C
Energy losses include tail & diode
reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 175°C, I
C
= 225A
V
CC
= 480V, Vp
≤
650V
R
g
= 50, V
GE
= +20V to 0V
T
J
= 150°C,V
CC
= 400V, Vp
≤
650V
R
g
= 50, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 75A
V
GE
= 15V, Rg = 10
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
140
50
60
2.5
2.2
4.7
50
70
200
60
3.9
2.8
6.7
50
70
240
70
4430
310
130
ns
pF
FULL SQUARE
5.5
—
—
—
—
770
170
27
—
—
—
—
µs
µJ
ns
A
2
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
140
120
Load Current ( A )
100
80
60
40
20
0.1
1
f , Frequency ( kHz )
10
Square Wave:
V
CC
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 208.3W
I
Diode as specified
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
160
140
120
100
80
60
40
20
0
25
50
75
100
TC (°C)
125
150
175
0
25
50
75
100
TC (°C)
125
150
175
Ptot (W)
500
400
300
IC (A)
200
100
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 3
- Power Dissipation vs.
Case Temperature
1000
100
10µsec
IC (A)
100
IC (A)
10
100µsec
1msec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VCE (V)
1000
10000
DC
1
10
100
VCE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C; T
J
≤
175°C; V
GE
= 15V
3
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
300
VGE = 18V
250
200
ICE (A)
300
VGE = 18V
250
200
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
150
100
50
0
0
2
4
6
V CE (V)
8
10
150
100
50
0
0
2
4
6
V CE (V)
8
10
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
300
VGE = 18V
250
200
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
150
100
50
0
0
2
4
6
V CE (V)
8
10
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
300
250
200
IF (A)
ICE (A)
150
100
50
0
0.0
1.0
2.0
V F (V)
3.0
4.0
-40°C
25°C
175°C
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
12
10
8
V CE (V)
Fig. 9
- Typ. Diode Forward Voltage Drop
Characteristics
12
10
ICE = 38A
ICE = 75A
V CE (V)
8
6
4
2
0
ICE = 38A
ICE = 75A
ICE = 150A
ICE = 150A
6
4
2
0
5
10
V GE (V)
15
20
5
10
V GE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
12
10
8
ICE = 38A
ICE = 75A
225
180
V CE (V)
6
4
2
0
5
10
V GE (V)
15
20
ICE (A)
ICE = 150A
135
90
TJ = 25°C
TJ = 175°C
45
0
2
4
6
8
10
12
14
16
V GE (V)
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 175°C
12
10
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
1000
tdOFF
EON
Swiching Time (ns)
8
Energy (mJ)
6
4
2
0
0
25
50
75
100
125
150
100
tF
EOFF
tdON
tR
10
0
50
IC (A)
100
150
IC (A)
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
11
10
9
8
Energy (mJ)
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
10000
Swiching Time (ns)
1000
tdOFF
tF
100
tR
tdON
10
0
20
40
60
R G ()
80
100
120
7
6
5
4
3
2
0
25
50
Rg ()
75
100
EOFF
EON
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
5
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
2017-12-18
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