TN1205T-600
12 A SCR
Features
■
High current density per square mm
Applications
■
■
■
Overvoltage crowbar protection
Motor control circuits in power tools and
kitchen aids
Inrush current limiting circuits
A
K A
G
Description
This device is mounted in DPAK and intended for
use in applications such as voltage regulators
circuits for motorbikes, overvoltage crowbar
protection, motor control circuits in power tools
and capacitive discharge ignition.
Table 1.
I
T(rms)
V
DRM
/V
RRM
I
GT
DPAK
TN1205T-600B
Device summary
12 A
600 V
2 to 5 mA
October 2009
Doc ID 16339 Rev 1
1/8
www.st.com
8
Characteristics
TN1205T-600
1
Table 2.
Symbol
I
T(RMS)
I
T(AV)
I
TSM
I
2
T
di/dt
I
GM
P
G(AV)
T
stg
T
j
Characteristics
Absolute ratings
(1)
Parameter
On-state rms current (180 °C conduction angle)
Average on-state current(180 °C conduction angle)
Non repetitive surge peak on-state current
I
2
T value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 60 Hz
t
p
= 20 µs
T
c
= 103 °C
T
c
= 103 °C
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
T
j
= 125 °C
T
c
= 125 °C
T
j
= 125 °C
Value
12
8
120
115
66
50
4
1
-40 to + 150
°C
-40 to + 125
Unit
A
A
A
A
2
s
A/µs
A
W
1. T
j
= 25 °C, unless otherwise specified
Table 3.
Symbol
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
t
GT
Electrical characteristics
(1)
Test conditions
V
D
= 12 V, R
L
= 33
Ω
V
D
= 12 V, R
L
= 33
Ω
V
D
= V
DRM,
R
L
= 3.3 kΩ
I
T
= 500 mA gate open
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
gate open
Gate controlled turn on time
I
TM
= 40 A, V
D
= V
DRM(MAX)
, I
GT
= 100 mA
dI
G
/dt = 5 A/µs, R
G
= 68
Ω
Circuit commutated turn off time
V
D
= 67% V
DRM(MAX)
, T
j
= 125 °C, I
TM
= 20 A, V
R
= 25 V
dI
T
/dt = 30 A/µS, dV
D
/dt = 50 V/µs, R
GK
= 100
Ω
I
TM
= 24 A, T
p
= 380 µs
Threshold voltage
Dynamyc restistance
V
DRM
= V
RRM
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
100
1.2
T
j
= 125 °C
0.2
15
30
Min.
2
Typ.
Max.
5
1.3
Unit
mA
V
V
mA
mA
V/µs
µs
t
q
V
TM
V
T0
R
d
I
DRM
I
RRM
55
1.6
0.85
30
5
2
µs
V
V
mΩ
µA
mA
1. T
j
= 25 °C, unless otherwise specified
2/8
Doc ID 16339 Rev 1
TN1205T-600
Table 4.
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (DC)
Junction to ambient (DC)
S
(1)
= 0.5 cm
²
Characteristics
Thermal resistance
Parameter
Value
1.8
70
Unit
°C/W
°C/W
1. S = Copper surface under tab.
Figure 1.
Maximum average power
dissipation versus average
on-state current
Figure 2.
Average and DC on-state current
versus case temperature
Figure 3.
Average DC on-state current
versus ambient temperature
Figure 4.
Relative variation of thermal
impedance junction to case
versus pulse duration
Doc ID 16339 Rev 1
3/8
Characteristics
TN1205T-600
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 6.
Relative variation of gate trigger
current and voltage, holding and
latching current versus T
j
Figure 7.
Surge peak on-state current
versus number of cycles
Figure 8.
Non-repetitive surge peak on-state
current for a sinusoidal pulse, and
corresponding values of I
²
t
1000.0
I
TMS
(A), I
2
t (A
2
s)
T
j
initial = 25
I
TSM
dI/dt limitation:
50 A/µs
100.0
It
2
10.0
0.01
t
p
(ms)
0.10
1.00
10.00
Figure 9.
On-state characteristics
(maximum values)
Figure 10. Thermal resistance junction to
ambient versus copper surface
under tab
4/8
Doc ID 16339 Rev 1
TN1205T-600
Ordering information scheme
2
Ordering information scheme
Figure 11. Ordering information scheme
TN 12 05 T - 600 B (-TR)
Standard SCR series
Current
12 = 12 A
Sensitivity
05 = 5 mA
Application specific
Voltage
600 = 600 V
Package
B = DPAK
Packing mode
Blank = Tube
-TR = Tape and reel
Doc ID 16339 Rev 1
5/8
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