RN1107FS~RN1109FS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1107FS,RN1108FS,RN1109FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Complementary to RN2107FS~RN2109FS
0.15±0.05
Unit: mm
0.6±0.05
•
0.35±0.05
1
3
2
0.8±0.05
1.0±0.05
0.1±0.05
Equivalent Circuit and Bias Resistor Values
Type No.
RN1107FS
RN1108FS
R2
RN1109FS
E
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
+0.02
B
R1
0.48
-0.04
C
0.1±0.05
1.BASE
fSM
JEDEC
JEITA
TOSHIBA
2.EMITTER
3.COLLECOTR
―
―
2-1E1A
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2
common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1107FS~
RN1109FS
RN1107FS
Emitter-base voltage
RN1108FS
RN1109FS
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1107FS~
RN1109FS
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
20
20
6
7
15
50
50
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Weight: 0.0006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
0.2±0.05
RN1107FS~RN1109FS
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
RN1107FS~1109FS
RN1107FS
Emitter cut-off current
RN1108FS
RN1109FS
RN1107FS
DC current gain
RN1108FS
RN1109FS
Collector-emitter
saturation voltage
RN1107FS~1109FS
RN1107FS
Input voltage (ON)
RN1108FS
RN1109FS
RN1107FS
Input voltage (OFF)
RN1108FS
RN1109FS
Collector output
capacitance
RN1107FS~1109FS
RN1107FS
Input resistor
RN1108FS
RN1109FS
RN1107FS
Resistor ratio
RN1108FS
RN1109FS
R1/R2
⎯
R1
⎯
C
ob
V
CB
=
10 V, I
E
=
0,
f
=
1 MHz
V
I (OFF)
V
CE
=
5 V, I
C
=
0.1 mA
V
I (ON)
V
CE
=
0.2 V, I
C
=
5 mA
V
CE (sat)
I
C
=
5 mA,
I
B
=
0.25 mA
h
FE
V
CE
=
5 V, I
C
=
10 mA
I
EBO
Symbol
I
CBO
I
CEO
Test Condition
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
EB
=
7 V, I
C
=
0
V
EB
=
15 V, I
C
=
0
Min
⎯
⎯
0.088
0.085
0.182
120
120
100
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
Max
100
500
0.131
0.126
0.271
⎯
mA
Unit
nA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
10
22
47
0.213
0.468
2.14
⎯
⎯
0.15
1.5
2.2
5.0
1.0
1.1
2.6
V
V
V
⎯
0.7
0.8
1.6
0.5
0.6
1.3
⎯
8
17.6
37.6
0.17
0.374
1.71
⎯
12
26.4
56.4
0.255
0.562
2.56
pF
kΩ
2
2007-11-01
RN1107FS~RN1109FS
RN1107FS
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
COLLECTOR CURRENT IC (μA)
RN1107FS
IC - VI(OFF)
COMMON EMITTER
VCE=5V
1000
Ta=100°C
25
-25
Ta=100°C
10
25
1
-25
COMMON EMITTER
VCE=0.2V
100
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI(OFF) (V)
RN1108FS
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
COLLECTOR CURRENT IC (μA)
RN1108FS
IC - VI(OFF)
COMMON EMITTER
VCE=5V
10
Ta=100°C
1000
Ta=100°C
25
-25
25
1
-25
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
100
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
INPUT VOLTAGE VI(OFF) (V)
RN1109FS
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
RN1109FS
IC - VI(OFF)
COMMON EMITTER
VCE=5V
COLLECTOR CURRENT IC (μA)
10
Ta=100°C
25
1
-25
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
1000
Ta=100°C
25
-25
100
10
0.6
1
1.4
1.8
2.2
2.6
3
INPUT VOLTAGE VI(OFF) (V)
3
2007-11-01
RN1107FS~RN1109FS
RN1107FS
1000
hFE - IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN1107FS
VCE(sat) - IC
Ta=100°C
DC CURRENT GAIN hFE
COMMON EMITTER
IC / IB = 20
25
100
-25
100
Ta=100°C
COMMON EMITTER
VCE = 5V
10
1
10
COLLECTOR CURRENT IC (mA)
100
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
RN1108FS
100
RN1108FS
1000
Ta=100°C
hFE - IC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
1000
VCE(sat) - IC
COMMON EMITTER
IC / IB = 20
DC CURRENT GAIN hFE
25
100
-25
100
Ta=100°C
COMMON EMITTER
VCE = 5V
10
1
10
100
COLLECTOR CURRENT IC (mA)
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
100
RN1109FS
1000
hFE - IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN1109FS
VCE(sat) - IC
COMMON EMITTER
IC / IB = 20
DC CURRENT GAIN hFE
Ta=100°C
25
100
-25
100
Ta=100°C
COMMON EMITTER
VCE = 5V
10
1
10
COLLECTOR CURRENT IC (mA)
100
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
100
4
2007-11-01
RN1107FS~RN1109FS
Type Name
Marking
Type name
RN1107FS
L6
Type name
RN1108FS
L7
Type name
RN1109FS
L8
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
5
2007-11-01
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