Si4922DY
New Product
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.016 @ V
GS
= 10 V
0.018 @ V
GS
= 4.5 V
0.024 @ V
GS
= 2.5 V
I
D
(A)
8.8
8.3
7.2
D
1
D
1
D
2
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
30
"12
8.8
Steady State
Unit
V
6.7
5.3
"30
A
0.9
1.1
0.7
–55 to 150
W
_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
7.1
1.7
2.0
1.3
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71309
S-20112—Rev. B, 11-Mar-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
45
85
26
Maximum
62.5
110
35
Unit
_C/W
C/W
1
Si4922DY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 8.8 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 8.3 A
V
GS
= 2.5 V, I
D
= 7.2 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= 15 V, I
D
= 8.8 A
I
S
= 1.7 A, V
GS
= 0 V
30
0.013
0.015
0.020
30
0.8
1.2
0.016
0.018
0.024
S
V
W
0.60
"100
1
5
V
nA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.7 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8.8 A
22
5.8
5.8
12
10
75
26
30
24
20
150
50
60
ns
33
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10 thru 3 V
24
I
D
– Drain Current (A)
I
D
– Drain Current (A)
24
30
Transfer Characteristics
18
18
12
12
T
C
= 125_C
6
25_C
–55_
C
0.5
1.0
1.5
2.0
2.5
3.0
6
2V
1V
0
0
1
2
3
4
5
0
0.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71309
S-20112—Rev. B, 11-Mar-02
www.vishay.com
2
Si4922DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06
r
DS(on)
– On-Resistance (
W
)
3500
3000
C – Capacitance (pF)
2500
2000
1500
1000
500
0
0
6
12
18
24
30
0
6
12
18
24
30
C
oss
C
rss
C
iss
Vishay Siliconix
Capacitance
0.05
0.04
0.03
V
GS
= 2.5 V
V
GS
= 4.5 V
0.02
0.01
V
GS
= 10 V
0.00
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 8.8 A
8
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 8.8 A
1.4
6
r
DS(on)
– On-Resistance (
W)
(Normalized)
20
30
40
50
1.2
4
1.0
2
0.8
0
0
10
Q
g
– Total Gate Charge (nC)
0.6
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
T
J
= 150_C
I
S
– Source Current (A)
0.06
On-Resistance vs. Gate-to-Source Voltage
10
r
DS(on)
– On-Resistance (
W
)
0.05
I
D
= 8.8 A
0.04
0.03
T
J
= 25_C
0.02
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71309
S-20112—Rev. B, 11-Mar-02
www.vishay.com
3
Si4922DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
Single Pulse Power
0.2
V
GS(th)
Variance (V)
I
D
= 250
mA
–0.0
Power (W)
40
30
–0.2
20
–0.4
10
–0.6
–50
–25
0
25
50
75
100
125
150
0
10
–2
10
–1
1
Time (sec)
10
100
600
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
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4
Document Number: 71309
S-20112—Rev. B, 11-Mar-02
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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