MIXA225RF1200TSF
tentative
XPT IGBT Module
Boost chopper + free wheeling Diodes + NTC
V
CES
=
I
C25
=
V
CE(sat)
=
1200 V
360 A
1.8 V
Part number
MIXA225RF1200TSF
5
2
1
8
9
T
3
4
D
6
10/11
D
Boost
Features / Advantages:
• High level of integration - only one
power semiconductor module required for the
whole drive
• Rugged XPT design
(Xtreme light Punch Through)
results in:
- short circuit rated for 10 μsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
• Thin wafer technology combined with the XPT
design results in a competitive low V
CE(sat)
• Temperature sense included
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
• Brake for AC motor drives
• Boost chopper
• Switch reluctance drives
Package:
SimBus F
• Industry standard outline
• RoHS compliant
• Soldering pins for PCB mounting
• Height: 17 mm
• Base plate:
Copper internally DCB isolated
• Advanced power cycling
IXYS reserves the right to change limits, test conditions and dimensions.
20121102
© 2012 IXYS All rights reserved
1-4
MIXA225RF1200TSF
tentative
IGBT
T
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
I
CM
SCSOA
t
SC
I
SC
R
thJC
R
thCH
Definitions
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
Ratings
Conditions
T
VJ
= 25°C to 125°C
min.
typ.
max.
1200
±20
±30
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 225 A; V
GE
= 15 V
I
C
= 9 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V; V
CE
= 0 V
V
CE
= 600 V; V
GE
= 15 V; I
C
= 225 A
inductive load
V
CE
= 600 V; I
C
= 225 A
V
GE
= ±15 V; R
G
= 3.3
W
V
GE
= ±15 V; R
G
= 3.3
W
V
CEmax
= 1200 V
V
CEmax
= 1200 V
V
CE
= 900 V; V
GE
= ±15 V;
R
G
= 3.3
W;
non-repetitive
T
VJ
= 125°C
690
60
70
280
310
20
27
500
10
900
0.115
0.045
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
5.4
0.3
1.5
1.8
2.1
360
250
1100
2.1
6.5
0.3
Unit
V
V
V
A
A
W
V
V
V
mA
mA
μA
nC
ns
ns
ns
ns
mJ
mJ
A
μs
A
K/W
K/W
T
VJ
= 125°C
T
VJ
= 125°C
Diode
D
Boost
V
RRM
I
F25
I
F80
V
F
I
R
Q
rr
I
RM
t
rr
E
rec
R
thJC
R
thCH
max. repetitive reverse voltage
forward current
forward voltage
reverse current
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80°C
I
F
= 225 A; V
GE
= 0 V
V
R
= V
RRM
V
R
= 600 V
-di
F
/dt = 3300 A/μs
I
F
= 225 A; V
GE
= 0 V
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
1.80
1.70
0.3
32
250
340
11.7
1200
265
185
2.10
0.3
V
A
A
V
V
mA
mA
μC
A
ns
mJ
0.145
0.05
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
20121102
© 2012 IXYS All rights reserved
2-4
MIXA225RF1200TSF
tentative
Diode
D
Symbol
V
RRM
I
F25
I
F80
V
F
I
R
R
thJC
R
thCH
Definitions
max. repetitive reverse voltage
forward current
forward voltage
reverse current
* not applicable, see Ices value of IGBT T
thermal resistance junction to case
thermal resistance case to heatsink
Ratings
Conditions
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80°C
I
F
= 60 A; V
GE
= 0 V
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
2.0
2.0
*
0.5
0.2
Ratings
Conditions
per terminal
-40
-40
350
I
ISOL
< 1 mA; 50/60 Hz
3400
3
3
terminal to terminal
terminal to backside
50/60 Hz, RMS, I
ISOL
< 1 mA
12.7
10.0
3000
2500
0.65
6
6
mounting torque (M5)
terminal torque (M6)
creepage distance on surface / striking distance through air
isolation voltage
resistance terminal to chip
min.
typ.
max.
1200
65
45
2.2
*
Unit
V
A
A
V
V
mA
mA
K/W
K/W
Package SimBus F
Symbol
I
RMS
T
stg
T
VJM
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
R
term-chip
Definitions
RMS current
storage temperature
virtual junction temperature
min.
typ.
max.
125
150
Unit
A
°C
°C
g
V~
Nm
Nm
mm
mm
V
V
mW
t = 1 second
t = 1 minute
V = V
CEsat
+ 2x R
term-chip
·I
C
resp. V = V
F
+ 2x R·I
F
2D Data Matrix
Part number
M
I
X
A
225
RF
1200
T
EH
= Module
= IGBT
= XPT
= standard
= Current Rating [A]
= Boost / brake chopper + free wheeling diode
= Reverse Voltage [V]
= NTC
= E3-Pack
XXX XX-XXXXX
Logo
UL
Part number
YYWWx
Date Code Location
Ordering
Standard
Part Name
MIXA225RF1200TSF
Marking on Product
MIXA225RF1200TSF
Delivering Mode Base Qty Ordering Code
Box
3
511581
Temperature Sensor NTC
Symbol
R
25
B
25/50
Definitions
resistance
temperature coefficient
Ratings
Conditions
T
C
= 25°C
min.
4.75
typ.
5.0
3375
max. Unit
5.25
kW
K
IXYS reserves the right to change limits, test conditions and dimensions.
20121102
© 2012 IXYS All rights reserved
3-4
MIXA225RF1200TSF
tentative
Outlines SimBus F
1,2
20,5
17
87,26
64,4
60,59
37,73
33,92
11,06
7,25
0
7,75
9
10
87
65
4
0,46
0
3,75
R2,5
57,5
62
50
22
11
12
3
57,96
94,5
110
122
137
152
5
2
1
8
9
T
3
4
D
6
10/11
D
Boost
IXYS reserves the right to change limits, test conditions and dimensions.
20121102
© 2012 IXYS All rights reserved
0,8
4-4
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