VS-ST183SP Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Stud Version), 195 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
TO-93 (TO-209AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
J
T
C
Package
Circuit configuration
195 A
400 V, 800 V
1.80 V
4900 A
5130 A
200 mA
-40 °C to 125 °C
85 °C
TO-93 (TO-209AB)
Single SCR
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
50 Hz
60 Hz
50 Hz
60 Hz
T
C
TEST CONDITIONS
VALUES
195
85
306
4900
5130
120
110
400 to 800
15 to 20
-40 to 125
kA
2
s
V
μs
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
I
DRM
/I
RRM
MAXIMUM AT
T
J
= T
J
MAXIMUM
mA
40
VS-ST183S
Revision: 22-Aug-17
Document Number: 94369
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST183SP Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
r
Voltage before turn-on V
d
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
570
560
500
340
50
V
DRM
50
60
47/0.22
370
360
300
190
900
940
925
760
50
V
DRM
-
610
630
610
490
7040
3200
1780
880
50
V
DRM
-
5220
2280
1200
560
V
A/μs
85
47/0.22
°C
/μF
A
85
60
47/0.22
85
60
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 74 °C case temperature
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
195
85
306
4900
5130
4120
Sinusoidal half wave,
initial T
J
= T
J
maximum
4310
120
110
85
78
1200
1.80
1.40
1.45
0.67
0.58
600
1000
m
V
kA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
I
TM
= 600 A, T
J
= T
J
maximum, t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
minimum
Maximum turn-off time
maximum
t
q
SYMBOL
dI/dt
t
d
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
maximum,
I
TM
= 300 A, commutating dI/dt = 20 A/μs
V
R
= 50 V, t
p
= 500 μs, dV/dt: 200 V/μs
VALUES
1000
1.1
15
20
μs
UNITS
A/μs
Revision: 22-Aug-17
Document Number: 94369
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST183SP Series
www.vishay.com
Vishay Semiconductors
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
40
UNITS
V/μs
mA
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= T
J
maximum V
A
= 12 V, R
a
= 6
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.105
0.04
31 (275)
24.5 (210)
280
UNITS
°C
K/W
N·m
(lbf · in)
g
TO-93 (TO-209AB)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.016
0.019
0.025
0.036
0.060
RECTANGULAR
CONDUCTION
0.012
0.020
0.027
0.037
0.060
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 22-Aug-17
Document Number: 94369
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST183SP Series
www.vishay.com
Vishay Semiconductors
130
130
ST183S Series
R
thJC
(DC) = 0.105 K/W
Maximum Allowable
Case Temperature (°C)
Maximum Allowable
Case Temperature (°C)
120
120
110
ST183S Series
R
thJC
(DC) = 0.105 K/W
110
Ø
Conduction angle
Ø
100
90
80
70
30°
Conduction period
100
60°
90°
120°
0
50
100
150
200
180°
DC
250
300
350
90
30 °C
80
0
20
40
60
60 °C
90 °C
120 °C
180 °C
80 100 120 140 160 180 200
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
350
350
Maximum Average On-State
Power Loss (W)
300
250
200
Maximum Average On-State
Power Loss (W)
180°
120°
90°
60°
30°
1
0.
R
th
300
250
200
150
100
50
0
16
0.2
K/W
K/
W
0.
K/
W
SA
=
0.
08
K/
W
0.3
R
-
Δ
RMS limit
150
100
50
0
0
20
40
60
80 100 120 140 160 180 200
Ø
Conduction angle
ST183S Series
T
J
= 125 °C
K/W
0.4
K/W
0.5
K/W
0.8 K
/W
1.2 K/W
25
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
500
450
Maximum Average On-State
Power Loss (W)
Maximum Average
On-State Power Loss (W)
400
350
300
250
200
150
100
50
0
0
DC
180°
120°
90°
60°
30°
500
450
400
350
300
250
200
150
100
50
0
25
R
th
SA
=
0.1
0.
8
RMS limit
Ø
Conduction period
ST183S Series
T
J
= 125 °C
50
100
150
200
250
300
350
W
0.1
6K
0.2
/W
K/W
0.3
K/
0.4 K
W
0.5 K
/W
/W
0.8 K/W
1.2 K/W
K/
K/
W
-
Δ
R
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 22-Aug-17
Document Number: 94369
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST183SP Series
www.vishay.com
Vishay Semiconductors
1
4500
At any rated load condition and with
rated V
RRM
applied following surge
Peak Half Sine Wave
On-State Current (A)
4000
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Z
thJC
- Transient Thermal
Impedance (K/W)
Steady state value
R
thJC
= 0.105 K/W
(DC operation)
0.1
3500
3000
0.01
ST183S Series
2500
ST183S Series
2000
1
10
100
0.001
0.001
0.01
0.1
1
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
5000
4500
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
250
ST183S Series
T
J
= 125 °C
Q
rr
- Maximum Reverse
Recovery Charge (µC)
Peak Half Sine Wave
On-State Current (A)
200
4000
3500
3000
2500
ST183S Series
2000
0.01
A
00
=5
A
I
TM
00
=3
I
TM
0A
= 20
I
TM
I
TM
=
100 A
150
100
I
TM
= 50 A
50
0
0.1
1
0
20
40
60
80
100
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 9 - Reverse Recovered Charge Characteristics
Instantaneous On-State Current (A)
10 000
ST183S Series
160
I
rr
- Maximum Reverse Recovery
Current (A)
140
120
100
80
60
40
20
0
T
J
= 125 °C
1000
T
J
= 25 °C
I
TM
0A
50
0 A
=
0
I
TM
= 3
A
I
TM
200
=
A
I
TM
= 100
I
TM
0A
=5
ST183S Series
T
J
= 125 °C
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
20
40
60
80
100
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 22-Aug-17
Document Number: 94369
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
