PD - 95300
IRF7379PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Complimentary Half Bridge
Surface Mount
Fully Avalanche Rated
Lead-Free
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
D1
D1
D2
D2
N-Ch
V
DSS
30V
P-Ch
-30V
6
5
P-CHANNEL MOSFET
R
DS(on)
0.045Ω 0.090Ω
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
SD
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
Drain-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
30
5.8
4.6
46
2.5
0.02
± 20
5.0
-55 to + 150
-5.0
P-Channel
-30
-4.3
-3.4
-34
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
www.irf.com
1
10/7/04
IRF7379PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
N-Ch 30
—
—
P-Ch -30 —
—
N-Ch — 0.032 —
P-Ch — -0.037 —
— 0.038 0.045
N-Ch
— 0.055 0.075
— 0.070 0.090
P-Ch
— 0.130 0.180
N-Ch 1.0 —
—
P-Ch -1.0 —
—
N-Ch 5.2 —
—
P-Ch 2.5 —
—
N-Ch —
— 1.0
P-Ch —
— -1.0
N-Ch —
—
25
P-Ch —
— -25
N-P ––
— ±100
N-Ch —
—
25
P-Ch —
—
25
N-Ch —
— 2.9
P-Ch —
— 2.9
N-Ch —
— 7.9
P-Ch —
— 9.0
N-Ch — 6.8 —
P-Ch —
11
—
N-Ch —
21
—
P-Ch —
17
—
N-Ch —
22
—
P-Ch —
25
—
N-Ch — 7.7 —
P-Ch —
18
—
N-P — 4.0 —
N-P — 6.0 —
N-Ch — 520 —
P-Ch — 440 —
N-Ch — 180 —
P-Ch — 200 —
N-Ch —
72
—
P-Ch —
93
—
Units
V
V/°C
Ω
V
S
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 4.9A
V
GS
= -10V, I
D
=- 4.3A
V
GS
= -4.5V, I
D
=- 3.7A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 15V, I
D
= 2.4A
V
DS
= -24V, I
D
= -1.8A
V
DS
= 24 V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V
V
DS
= 24 V, V
GS
= 0V, T
J
= 125°C
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= ± 20V
N-Channel
I
D
= 2.4A, V
DS
= 24V, V
GS
= 10V
P-Channel
I
D
= -1.8A, V
DS
= -24V, V
GS
= -10V
N-Channel
V
DD
= 15V, I
D
= 2.4A, R
G
= 6.0Ω,
R
D
= 6.2Ω
P-Channel
V
DD
= -15V, I
D
= -1.8A, R
G
= 6.0Ω,
R
D
= 8.2Ω
Between lead, 6mm (0.25in.) from
package and center of die contact
N-Channel
V
GS
= 0V, V
DS
= 25V, ƒ = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -25V, ƒ = 1.0MHz
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
nH
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Conditions
Min. Typ. Max. Units
—
— 3.1
—
— -3.1
A
—
—
46
—
— -34
—
— 1.0
T
J
= 25°C, I
S
= 1.8A, V
GS
= 0V
V
—
— -1.0
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
—
47
71
N-Channel
ns
—
53
80
T
J
= 25°C, I
F
= 2.4A, di/dt = 100A/µs
—
56
84
P-Channel
nC
T
J
= 25°C, I
F
= -1.8A, di/dt = -100A/µs
—
66
99
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board,
t
≤
10sec.
N-Channel I
SD
≤
2.4A, di/dt
≤
73A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-1.8A, di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
2
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N-Channel
1000
IRF7379PbF
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
I , Drain-to-Source Current (A)
D
100
I , Drain-to-Source Current (A)
D
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
10
4.5V
10
1
0.1
1
20µs PULSE WIDTH
T
J
= 25°C
10
A
100
VDS , Drain-to-Source Voltage (V)
1
0.1
20µs PULSE WIDTH
T
J
= 150°C
1
10
100
A
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
I
D
, Drain-to-Source Current (A)
T
J
= 25°C
T
J
= 150°C
I
SD
, Reverse Drain Current (A)
10
T
J
= 150°C
T
J
= 25°C
1
10
4
5
6
7
V
DS
= 15V
20µs PULSE WIDTH
8
9
10
A
0.1
0.0
0.5
1.0
1.5
V
GS
= 0V
2.0
A
2.5
V
GS
, Gate-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
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3
IRF7379PbF
2.0
N-Channel
0.20
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 4.0A
R
DS (on)
, Drain-to-Source On Resistance
(
Ω
)
0.16
1.5
0.12
1.0
VGS = 4.5V
0.08
0.5
VGS = 10V
0.04
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160
A
0.00
2
4
6
8
10
T
J
, Junction Temperature (°C)
I
D
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
R
DS (on)
, Drain-to-Source On Resistance
(
Ω
)
0.08
0.07
0.06
0.05
ID = 5.8A
0.04
0.03
0
4
8
12
16
V
GS
, Gate-to-Source Voltage (V)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
4
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N-Channel
1000
20
IRF7379PbF
I
D
= 2.4A
V
DS
= 24V
800
C
iss
600
C
oss
400
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
16
C, Capacitance (pF)
12
8
200
C
rss
4
0
1
10
100
A
0
0
5
10
FOR TEST CIRCUIT
SEE FIGURE 11
15
20
25
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 8.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 9.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
100
10
1
t
1
, Rectangular Pulse Duration (sec)
Fig 10.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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