Freescale Semiconductor
Technical Data
Document Number: MRF8S21100H
Rev. 1, 3/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
700 mA, P
out
= 24 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
17.9
18.1
18.3
η
D
(%)
33.0
33.0
33.4
Output PAR
(dB)
6.4
6.4
6.3
ACPR
(dBc)
--38.7
--38.2
--37.2
MRF8S21100HR3
MRF8S21100HSR3
2110-
-2170 MHz, 24 W AVG., 28 V
W-
-CDMA, LTE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 138 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
≃
100 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 14.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(2,3)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
CASE 465-
-06, STYLE 1
NI-
-780
MRF8S21100HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF8S21100HSR3
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
108
0.57
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 77°C, 24 W CW, 28 Vdc, I
DQ
= 700 mA, 2140 MHz
Case Temperature 80°C, 100 W CW
(1)
, 28 Vdc, I
DQ
= 700 mA, 2140 MHz
Symbol
R
θJC
Value
(3,4)
0.48
0.45
Unit
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
MRF8S21100HR3 MRF8S21100HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 150
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 700 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 700 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.5 Adc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
4.0
0.1
2.0
2.7
5.4
0.24
2.7
—
7.0
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 700 mA, P
out
= 24 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
17.2
31.0
5.9
—
—
18.3
33.4
6.3
--37.2
--12
20.2
—
—
--36.0
--7
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 700 mA, P
out
= 24 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
17.9
18.1
18.3
η
D
(%)
33.0
33.0
33.4
Output PAR
(dB)
6.4
6.4
6.3
ACPR
(dBc)
--38.7
--38.2
--37.2
IRL
(dB)
--18
--16
--12
1. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF8S21100HR3 MRF8S21100HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 36 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 24 W Avg.
Gain Variation over Temperature
(--30°C to +80°C)
Output Power Variation over Temperature
(--30°C to +80°C)
(1)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
100
40
Max
—
—
Unit
W
MHz
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 700 mA, 2110--2170 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
50
0.4
0.011
0.005
—
—
—
—
MHz
dB
dB/°C
dB/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S21100HR3 MRF8S21100HSR3
RF Device Data
Freescale Semiconductor
3
R2
R1
V
GG
C3
C5
C6
C8
C9
--
C12
V
DD
+
R3
CUT OUT AREA
C13
C7
C10 C11
MRF8S21100H
Rev 0
Part Number
ATC100B6R8CT500XT
ATC100B1R6BT500XT
ATC100B0R2BT500XT
293D106X9050E2TE3
227CKS050M
ATC100B5R6CT500XT
CRCW12062K00FKEA
CRCW120610R0JNEA
AD255A
Manufacturer
ATC
ATC
ATC
Vishay
Illinois Capacitor
ATC
Vishay
Vishay
Arlon
C1
C4
C2
Figure 1. MRF8S21100HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S21100HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C3, C6, C7
C2
C4
C5, C8, C9, C10, C11
C12
C13
R1, R2
R3
PCB
Description
6.8 pF Chip Capacitors
1.6 pF Chip Capacitor
0.2 pF Chip Capacitor
10
μF,
50 V Tantalum Capacitors
220
μF,
50 V Electrolytic Capacitor, Radial
5.6 pF Chip Capacitor
2 KΩ, 1/4 W Chip Resistors
10
Ω,
1/4 W Chip Resistor
0.030″,
ε
r
= 2.55
MRF8S21100HR3 MRF8S21100HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
V
DD
= 28 Vdc, P
out
= 24 W (Avg.), I
DQ
= 700 mA
19.5 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
19
G
ps
, POWER GAIN (dB)
18.5
18
17.5
17
16.5
16
15.5
ACPR
IRL
PARC
G
ps
η
D
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
20
34.5
34
33.5
33
32.5
--34
--35
ACPR (dBc)
--36
--37
--38
2100
2120
2140
2160
2180
2200
--39
2220
IRL, INPUT RETURN LOSS (dB)
--7.5
--10
--12.5
--15
--17.5
--20
--1
--1.2
--1.4
--1.6
--1.8
--2
PARC (dB)
15
2060
2080
f, FREQUENCY (MHz)
Figure 2. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 24 Watts Avg.
--10
--20
--30
--40
--50
--60
IM7--L
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 36 W (PEP), I
DQ
= 700 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--L
IM3--U
IM5--U
IM5--L
Figure 3. Intermodulation Distortion Products
versus Two-
-Tone Spacing
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
18.5
G
ps
, POWER GAIN (dB)
18
17.5
17
16.5
16
1
0
--1
--2
--3
--4
--5
--1 dB = 22 W
G
ps
--2 dB = 30 W
--3 dB = 40 W
PARC
20
10
60
70
η
D
,
DRAIN EFFICIENCY (%)
60
50
40
30
--20
--25
--30
--35
--40
--45
--50
ACPR (dBc)
V
DD
= 28 Vdc, I
DQ
= 700 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
ACPR
η
D
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
10
20
30
40
50
P
out
, OUTPUT POWER (WATTS)
Figure 4. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S21100HR3 MRF8S21100HSR3
RF Device Data
Freescale Semiconductor
5
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