IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
D
FEATURES
600
V
GS
= 10 V
220
67
96
Single
0.175
• Super Fast Body Diode Eliminates the Need
for External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive
Requirements
Available
RoHS*
COMPLIANT
• Enhances dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offer Improved Noise
Immunity
SUPER-247
TM
• Lead (Pb)-free Available
APPLICATIONS
G
S
D
G
S
N-Channel
MOSFET
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
SUPER-247
TM
IRFPS29N60LPbF
SiHFPS29N60L-E3
IRFPS29N60L
SiHFPS29N60L
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche
Repetitive Avalanche
Energy
b
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
Repetitive Avalanche Current
a
Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
29
18
110
3.8
570
29
48
480
15
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 1.5 mH, R
G
= 25
Ω,
I
AS
= 29 A (see fig.12a).
c. I
SD
≤
29 A, dI/dt
≤
830 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91255
S-81359-Rev. A, 07-Jul-08
www.vishay.com
1
IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
a
Note
a. R
th
is measured at T
J
approximately 90 °C.
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.24
-
MAX.
40
-
0.26
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Recovery Current
Current
a
I
S
I
SM
V
SD
t
rr
T
J
= 25 °C, I
F
= 29 A
T
J
= 125 °C, dI/dt = 100 A/µs
b
Q
rr
I
RRM
T
J
= 25 °C
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
eff.
C
oss
eff. (ER)
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 17 A
b
A
b
V
DS
= 50 V, I
D
= 17
600
-
3.0
-
-
-
-
15
-
-
-
-
-
0.53
-
-
-
-
0.175
-
6160
530
44
250
190
-
-
-
0.86
34
100
66
54
-
-
5.0
± 100
50
2.0
0.21
-
-
-
-
-
-
220
67
96
-
-
-
-
-
V
V/°C
V
nA
µA
mA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
b
V
DS
= 0 V to 480 V
c
pF
-
-
V
GS
= 10 V
I
D
= 29 A, V
DS
= 480 V,
see fig. 7 and 15
b
-
-
-
-
-
-
-
nC
Ω
f = 1 MHz, open drain
V
DD
=300 V, I
D
= 29 A,
R
G
= 4.3
Ω,
V
GS
= 10 V,
see fig. 11a and
11b
b
ns
-
-
-
-
-
-
-
-
-
-
-
130
240
630
1820
9.4
29
A
110
1.5
190
360
950
2720
14
V
ns
µC
A
G
S
T
J
= 25 °C, I
S
= 29 A, V
GS
= 0 V
b
Forward Turn-On Time
t
on
Intrinsic turn-on time is negligible (turn-on is dominatred by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
C
oss
eff. (ER) is a fixed capacitance that stores the same energy as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
www.vishay.com
2
Document Number: 91255
S-81359-Rev. A, 07-Jul-08
IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1000
TOP
VGS
15V
10V
9.0V
7.0V
7.0V
5.5V
5.0V
4.5V
20μs PULSE WIDTH
Tj = 25°C
1000.00
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100.00
T J = 150°C
10.00
10
BOTTOM
1
1.00
T J = 25°C
0.1
0.10
4.5V
0.01
0.1
1
10
100
0.01
4
6
VDS = 50V
20μs PULSE WIDTH
8
10
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
TOP
3.0
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
10
BOTTOM
VGS
15V
10V
9.0V
7.0V
7.0V
5.5V
5.0V
4.5V
ID = 28A
2.5
VGS = 10V
2.0
(Normalized)
1.5
1
4.5V
1.0
20μs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.5
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
T J , Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91255
S-81359-Rev. A, 07-Jul-08
www.vishay.com
3
IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
100000
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
ID= 28A
VDS= 480V
VDS= 300V
VDS= 150V
10000
16
C, Capacitance(pF)
Ciss
12
1000
Coss
100
8
4
Crss
10
1
10
100
1000
0
0
40
80
120
160
200
240
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
40
20
35
30
Energy (μJ)
ID= 28A
VDS= 480V
VDS= 300V
VDS= 150V
VGS , Gate-to-Source Voltage (V)
0
100
200
300
400
500
600
700
16
25
20
15
10
5
0
12
8
4
0
0
40
80
120
160
200
240
Q G Total Gate Charge (nC)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Output Capacitance Stored Energy vs. V
DS
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Document Number: 91255
S-81359-Rev. A, 07-Jul-08
IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
100
10
100μsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
10msec
30
V
GS
R
D
V
DS
D.U.T.
+
-
V
DD
10
V
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
25
ID, Drain Current (A)
R
G
20
15
Fig. 11a - Switching Time Test Circuit
10
V
DS
90
%
5
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 11b - Switching Time Waveforms
Document Number: 91255
S-81359-Rev. A, 07-Jul-08
www.vishay.com
5
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