19-0068; Rev 5; 10/09
KIT
ATION
EVALU
BLE
AVAILA
ISDB-T Single-Segment Low-IF Tuners
General Description
Features
♦
Low Noise Figure: < 4dB Typical
♦
High Dynamic Range: -98dBm to 0dBm
♦
High-Side or Low-Side LO Injection
♦
♦
♦
♦
♦
♦
♦
♦
♦
Integrated VCO and Tank Circuits
Low LO Phase Noise: Typical -88dBc/Hz at 10kHz
Integrated Frequency Synthesizer
Integrated Bandpass Filters
52dB Typical Image Rejection
Single +2.7V to +3.3V Supply Voltage
Three Low-Power Modes
Two-Wire, I
2
C-Compatible Serial Control Interface
Very Small Lead-Free WLP Package
MAX2160/MAX2160EBG
The MAX2160/EBG tuner ICs are designed for use in
Japanese mobile digital TV (ISDB-T single-segment)
applications. The devices directly convert UHF band
signals to a low-IF using a broadband I/Q downconvert-
er. The operating frequency range extends from
470MHz to 770MHz.
The MAX2160/EBG support both I/Q low-IF interfaces
as well as single low-IF interfaces, making the devices
universal tuners for various digital demodulator IC
implementations.
The MAX2160/EBG include an LNA, RF variable-gain
amplifiers, I and Q downconverting mixers, low-IF variable-
gain amplifiers, and bandpass filters providing in excess of
42dB of image rejection. The parts are capable of operat-
ing with either high-side or low-side local oscillator (LO)
injection. The MAX2160/EBG’s variable-gain amplifiers pro-
vide in excess of 100dB of gain-control range.
The MAX2160/EBG also include fully monolithic VCOs
and tank circuits, as well as a complete frequency syn-
thesizer. The devices include a XTAL oscillator as well
as a separate TCXO input buffer. The devices operate
with XTAL/TCXO oscillators from 13MHz to 26MHz
allowing the shared use of a VC-TCXO in cellular hand-
set applications. Additionally, a divider is provided for
the XTAL/TCXO oscillator allowing for simple and low-
cost interfacing to various channel decoders.
The MAX2160/EBG are specified for operation from
-40°C to +85°C and available in a 40-pin (6mm x 6mm)
thin QFN lead-free plastic package with exposed pad-
dle (EP), and in a 3.175mm x 3.175mm lead-free wafer-
level package (WLP).
Pin Configurations/
Functional Diagrams
GNDTUNE
GNDVCO
VCCVCO
VCOBYP
32
TOP VIEW
GNDCP
VCCCP
CPOUT
TEST
VTUNE
40
N.C. 1
TCXO 2
XTAL 3
GNDXTAL 4
VCCXTAL 5
XTALOUT 6
39
38
37
36
35
34
TANK
33
31
30 N.C.
FREQUENCY
SYNTHESIZER
N.C.
29 VCCBB
28 N.C.
27 QOUT
26 GNDBB
25 IOUT
24 N.C.
23 GC2
22 ENTCXO
21 N.C.
20
VCCFLT
DIV4
ADC
÷
Cell Phone Mobile TVs
Personal Digital Assistants (PDAs)
Pocket TVs
INTERFACE LOGIC
AND CONTROL
Applications
VCCDIG 7
SDA 8
SCL 9
LTC 10
MAX2160
PWRDET
EP
11
N.C.
12
VCCBIAS
13
RFIN
14
SHDN
15
N.C.
16
VCCLNA
17
GC1
18
VCCMX
19
PWRDET
Ordering Information
PART
MAX2160ETL
MAX2160ETL+
MAX2160EBG+
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
40 Thin QFN-EP*
40 Thin QFN-EP*
WLP
TQFN
Pin Configurations/Functional Diagrams continued at end of
data sheet.
+Denotes
a lead(Pb)-free/RoHS-compliant package.
*EP
= Exposed paddle.
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
ISDB-T Single-Segment Low-IF Tuners
MAX2160/MAX2160EBG
ABSOLUTE MAXIMUM RATINGS
All VCC_ Pins to GND............................................-0.3V to +3.6V
All Other Pins to GND.................................-0.3V to (V
CC
+ 0.3V)
RFIN, Maximum RF Input Power ....................................+10dBm
ESD Rating...........................................................................±1kV
Short-Circuit Duration
IOUT, QOUT, CPOUT, XTALOUT, PWRDET, SDA,
TEST, LTC, VCOBYP ...........................................................10s
CAUTION!
ESD SENSITIVE DEVICE
Continuous Power Dissipation (T
A
= +70°C)
40-Pin Thin QFN (derate 35.7mW/°C above +70°C)....2857mW
WLP (derate 10.8mW/°C above +70°C).........................704mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(MAX2160 EV kit, V
CC
= +2.7V to +3.3V, V
GC1
= V
GC2
= 0.3V (maximum gain), no RF input signals at RFIN, baseband I/Os are open
circuited and VCO is active with f
LO
= 767.714MHz, registers set according to the recommended default register conditions of
Tables 2–11, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= +2.85V, T
A
= +25°C, unless otherwise
noted.) (Note 1)
PARAMETER
SUPPLY
Supply Voltage
Receive mode,
SHDN
= V
CC
, BBL[1:0] = 00
Supply Current (See Tables 15
and 16)
Standby mode, bit STBY = 1
Power-down mode, bit PWDN = 1, EPD = 0
Shutdown mode,
SHDN
= GND
ANALOG GAIN-CONTROL INPUTS (GC1, GC2)
Input Voltage Range
Input Bias Current
VCO TUNING VOLTAGE INPUT (VTUNE)
Input Voltage Range
VTUNE ADC
Resolution
Input Voltage Range
110 to 111
101 to 110
100 to 101
Reference Ladder Trip Point
ADC read bits
011 to 100
010 to 011
001 to 010
000 to 001
LOCK TIME CONSTANT OUTPUT (LTC)
Source Current
Bit LTC = 0
Bit LTC = 1
1
2
µA
0.3
V
CC
- 0.4
1.9
1.7
1.3
0.9
0.6
0.4
V
3
2.4
bits
V
0.4
2.3
V
Maximum gain = 0.3V
0.3
-15
2.7
+15
V
µA
2.7
2.85
44
2
5
0
3.3
53.5
4
40
10
V
mA
µA
CONDITIONS
MIN
TYP
MAX
UNITS
2
_______________________________________________________________________________________
ISDB-T Single-Segment Low-IF Tuners
DC ELECTRICAL CHARACTERISTICS (continued)
(MAX2160 EV kit, V
CC
= +2.7V to +3.3V, V
GC1
= V
GC2
= 0.3V (maximum gain), no RF input signals at RFIN, baseband I/Os are open
circuited and VCO is active with f
LO
= 767.714MHz, registers set according to the recommended default register conditions of
Tables 2–11, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= +2.85V, T
A
= +25°C, unless otherwise
noted.) (Note 1)
PARAMETER
SHUTDOWN CONTROL (SHDN)
Input-Logic-Level High
Input-Logic-Level Low
2-WIRE SERIAL INPUTS (SCL, SDA)
Clock Frequency
Input-Logic-Level High
Input-Logic-Level Low
Input Leakage Current
2-WIRE SERIAL OUTPUT (SDA)
Output-Logic-Level Low
0.2
V
Digital inputs = GND or V
CC
±0.1
0.7 x V
CC
0.3 x V
CC
±1
400
kHz
V
V
µA
0.7 x V
CC
0.3 x V
CC
V
V
CONDITIONS
MIN
TYP
MAX
UNITS
MAX2160/MAX2160EBG
AC ELECTRICAL CHARACTERISTICS
(MAX2160 EV kit, V
CC
= +2.7V to +3.3V, f
RF
= 767.143MHz, f
LO
= 767.714MHz, f
BB
= 571kHz, f
XTAL
= 16MHz, V
GC1
= V
GC2
= 0.3V
(maximum gain), registers set according to the recommended default register conditions of Tables 2–11, RF input signals as speci-
fied, baseband output load as specified, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= +2.85V,
T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER
MAIN SIGNAL PATH PERFORMANCE
Input Frequency Range
Minimum Input Signal
Maximum Voltage Gain
Minimum Voltage Gain
RF Gain-Control Range
Baseband Gain-Control Range
In-Band Input IP3
Out-of-Band Input IP3
Input IP2
Input P
1dB
Noise Figure
Image Rejection
Minimum RF Input Return Loss
LO Leakage at RFIN
IF POWER DETECTOR
Resolution
Minimum RF Attack Point
Maximum RF Attack Point
Detector Bandwidth
Output Compliance Range
Response Time
C
14
= 10nF
Power at RFIN
Power at RFIN
3dB RF bandwidth
0.3
0.1
3
-62
-48
±35
2.7
bits
dBm
dBm
MHz
V
ms
f
RF
= 620MHz, 50Ω system
13-segment input
CW tone, V
GC1
= V
GC2
= 0.3V, bit MOD = 1
CW tone, V
GC1
= V
GC2
= 2.7V, bit MOD = 0
0.3V < V
GC1
< 2.7V
0.3V < V
GC2
< 2.7V
(Note 2)
(Note 3)
(Note 4)
CW tone, V
GC1
= V
GC2
= 2.7V, bit MOD = 0
V
GC1
= V
GC2
= 0.3V, T
A
= +25°C (Note 5)
42
38
57
43
67
+4
+16.7
+16
0
3.8
52
14
-100
5
102
4
470
-98
770
MHz
dBm
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
dB
dB
dBm
CONDITIONS
MIN
TYP
MAX
UNITS
_______________________________________________________________________________________
3
ISDB-T Single-Segment Low-IF Tuners
MAX2160/MAX2160EBG
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2160 EV kit, V
CC
= +2.7V to +3.3V, f
RF
= 767.143MHz, f
LO
= 767.714MHz, f
BB
= 571kHz, f
XTAL
= 16MHz, V
GC1
= V
GC2
= 0.3V
(maximum gain), registers set according to the recommended default register conditions of Tables 2–11, RF input signals as speci-
fied, baseband output load as specified, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= +2.85V,
T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER
LOW-IF BANDPASS FILTERS
Center Frequency
Frequency Response (Note 5)
Group Delay Variation
Nominal Output-Voltage Swing
I/Q Amplitude Imbalance
I/Q Quadrature Phase Imbalance
Output Gain Step
I/Q Output Impedance
FREQUENCY SYNTHESIZER
RF-Divider Frequency Range
RF-Divider Range (N)
Reference-Divider Frequency
Range
Reference-Divider Range (R)
Phase-Detector Comparison
Frequency
PLL-Referred Phase Noise Floor
Comparison Frequency Spurious
Products
T
A
= +25°C, f
COMP
= 285.714kHz
Bit EPB = 1
Bits CP[1:0] = 00
Charge-Pump Output Current
(Note 5)
Bits CP[1:0] = 01
Bits CP[1:0] = 10
Bits CP[1:0] = 11
Charge-Pump Compliance
Range
Charge-Pump Source/Sink
Current Matching
±10% variation from current at VTUNE = 1.35V
VTUNE = 1.35V
1.25
1.65
2.10
2.50
0.4
-10
470
829
13
22
1/7
-155
-52
1.5
2.0
2.5
3
1.75
2.35
2.90
3.50
2.2
+10
V
%
mA
770
5374
26
182
4/7
MHz
dBc/Hz
dBc
MHz
MHz
Bit MOD transition from 0 to 1
Real Z
O
+7
30
±380kHz offset from center frequency
1.3MHz
Up to 1dB bandwidth
R
LOAD
= 10kΩ || 10pF
(Note 6)
-6
-36
±100
0.5
±1.5
±2
571
-1.5
kHz
dB
ns
V
P-P
dB
deg
dB
Ω
CONDITIONS
MIN
TYP
MAX
UNITS
BASEBAND OUTPUT CHARACTERISTICS
4
_______________________________________________________________________________________
ISDB-T Single-Segment Low-IF Tuners
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2160 EV kit, V
CC
= +2.7V to +3.3V, f
RF
= 767.143MHz, f
LO
= 767.714MHz, f
BB
= 571kHz, f
XTAL
= 16MHz, V
GC1
= V
GC2
= 0.3V
(maximum gain), registers set according to the recommended default register conditions of Tables 2–11, RF input signals as speci-
fied, baseband output load as specified, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= +2.85V,
T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER
Guaranteed VCO Frequency
Range
Guaranteed LO Frequency
Range
Tuning Voltage Range
f
OFFSET
= 1kHz
LO Phase Noise
0.4V < VTUNE < 2.3V,
T
A
= -40°C to +85°C
f
OFFSET
= 10kHz
f
OFFSET
= 100kHz
f
OFFSET
= 1MHz
XTAL OSCILLATOR INPUT (TCXO AND XTAL)
XTAL Oscillator Frequency
Range
XTAL Minimum Negative
Resistance
XTAL Nominal Input Capacitance
TCXO Input Level
TCXO Minimum Input Impedance
REFERENCE OSCILLATOR BUFFER OUTPUT (XTALOUT)
Output Frequency Range
Output-Buffer Divider Range
Output-Voltage Swing
Output Load
Output Duty Cycle
Output Impedance
1
1
0.7
200 || 4
50
160
26
26
V
P-P
kΩ || pF
%
Ω
MHz
AC-coupled sine-wave input
0.4
10
Parallel resonance mode crystal
16MHz < f
XTAL
< 18MHz (Note 5)
13
885
13.3
1.5
26
MHz
Ω
pF
V
P-P
kΩ
CONDITIONS
MIN
TYP
MAX
UNITS
MAX2160/MAX2160EBG
VOLTAGE-CONTROLLED OSCILLATOR AND LO GENERATION
T
A
= -40°C to +85°C
T
A
= -40°C to +85°C
1880
470
0.4
-80
-87.5
-107
-128
dBc/Hz
3080
770
2.3
MHz
MHz
V
Note 1:
Min and max values are production tested at T
A
= +25°C and +85°C. Min and max limits at T
A
= -40°C are guaranteed by
design and characterization. Default register settings are not production tested; load all registers no sooner than 100µs
after power-up.
Note 2:
In-band IIP3 is measured with two tones at f
LO
- 100kHz and f
LO
- 200kHz at a power level of -23dBm/tone. GC1 is set for
maximum attenuation (V
GC1
= 2.7V) and GC2 is adjusted to achieve 250mV
P-P
/tone at the I/Q outputs for an input desired
level of -23dBm.
Note 3:
Out-of-band IIP3 is measured with two tones at f
RF
+ 6MHz and f
RF
+ 12MHz at a power level of -15dBm/tone. GC1 is set
for maximum attenuation (V
GC1
= 2.7V) and GC2 is adjusted to achieve 0.5V
P-P
at the I/Q outputs for an input desired level
of -50dBm. f
RF
is set to 767MHz + 1/7MHz = 767.143MHz.
Note 4:
GC1 is set for maximum attenuation (V
GC1
= 2.7V). GC2 is adjusted to give the nominal I/Q output voltage level (0.5V
P-P
)
for a -50dBm desired tone at f
RF
= 550MHz. Two tones, 220MHz and 770MHz at -15dBm/tone, are then injected and the
571kHz IM2 levels are measured (with a 550.571MHz LO) at the I/Q outputs and IP2 is then calculated.
Note 5:
Guaranteed by design and characterization.
Note 6:
Guaranteed and tested at T
A
= +25°C and +85°C only.
_______________________________________________________________________________________
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
