= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Repetitive Peak Off−State Current
(50 to 60 Hz Sine Wave)
V
DRM
= 90 V
V
DRM
= 180 V
ON CHARACTERISTICS
Breakover Voltage, I
BO
= 200
mA
MKP3V120
MKP3V240
V
BO
110
220
I
BO
V
TM
I
H
R
S
−
−
−
0.1
−
−
−
1.1
−
−
130
250
200
1.5
100
−
mA
V
mA
kW
V
I
DRM
MKP3V120
MKP3V240
−
−
10
mA
Symbol
Min
Typ
Max
Unit
Breakover Current
Peak On−State Voltage
(I
TM
= 1 A Peak, Pulse Width
≤
300
ms,
Duty Cycle
≤
2%)
Dynamic Holding Current
(Sine Wave, 60 Hz, R
L
= 100
W)
Switching Resistance
(Sine Wave, 50 to 60 Hz)
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of On−State Current,
Critical Damped Waveform Circuit
(I
PK
= 130
W,
Pulse Width = 10
msec)
di/dt
−
120
−
A/ms
Voltage Current Characteristic of SIDAC
(Bidirectional Device)
+ Current
I
TM
I
H
I
S
I
DRM
V
DRM
V
S
I
(BO)
+ Voltage
V
(BO)
V
TM
Symbol
I
DRM
V
DRM
V
BO
I
BO
I
H
V
TM
I
TM
Parameter
Off State Leakage Current
Off State Repetitive Blocking Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
Peak on State Current
Slope = R
S
R
S
+
(V
(BO)
– V
S
)
(I
S
– I
(BO)
)
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2
MKP3V120, MKP3V240
CURRENT DERATING
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
130
TA , MAXIMUM ALLOWABLE AMBIENT
TEMPERATURE (
°
C)
120
α
α
= Conduction Angle
T
J
Rated = 125°C
α
140
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
a
= 180°
α
= Conduction Angle
T
J
Rated = 125°C
110
100
90
a
= 180°
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
80
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
1.0
0.8
0.6
0.4
0.3
0.2
25°C
125°C
PAV , MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
I T , INSTANTANEOUS ON-STATE CURRENT (AMPS)
1.25
a
= 180°
α
α
= Conduction Angle
T
J
Rated = 125°C
1.00
0.75
0.50
0.25
0.1
0.8
0.9
1.0
1.1
1.2
1.3
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
0
0.2
0.4
0.6
0.8
1.0
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
Figure 3. Typical Forward Voltage
Figure 4. Typical Power Dissipation
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3
MKP3V120, MKP3V240
THERMAL CHARACTERISTICS
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
Z
qJL
(t) = R
qJL
•
r(t)
DT
JL
= P
pk
R
qJL
[r(t)]
t
p
TIME
where:
DT
JL
= the increase in junction temperature above the
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(t
p
) = normalized value of
transient resistance at time t
p
.
LEAD LENGTH =
1
/
4
″
The temperature of the lead should be
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady-state conditions are achieved.
Using the measured value of T
L
, the junction
temperature may be determined by:
T
J
= T
L
+
DT
JL
2.0 k
5.0 k
10 k
20 k
Figure 5. Thermal Response
TYPICAL CHARACTERISTICS
100
90
I(BO) , BREAKOVER CURRENT (
m
A)
IH , HOLDING CURRENT (mA)
80
70
60
50
40
30
20
10
0
-60
-40
-20
0
20
40
60
80
100
120
140
250
225
200
175
150
125
100
75
50
25
0
-60
-40
-20
0
20
40
60
80
100
120 140
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Breakover Current
Figure 7. Typical Holding Current
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4
MKP3V120, MKP3V240
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267
ISSUE G
K
1
D
A
2
NOTES:
1. DIMENSIONS AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 267-01 AND 267-02 OBSOLETE, NEW STANDARD
267-03.
DIM
A
B
D
K
INCHES
MIN
MAX
0.370
0.380
0.190
0.210
0.048
0.052
1.000
---
NO POLARITY
MILLIMETERS
MIN
MAX
9.40
9.65
4.83
5.33
1.22
1.32
25.40
---
B
K
STYLE 2:
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