VS-HFA30TA60CPbF, VS-HFA30TA60C-N3
www.vishay.com
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 15 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Designed and qualified according to
JEDEC
®
-JESD47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
TO-220AB
BENEFITS
Base
common
cathode
2
•
•
•
•
•
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
2
Common
cathode
1
3
Anode
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-220AB
2 x 15 A
600 V
1.2 V
19 ns
150 °C
Common cathode
VS-HFA30TA60C... is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 15 A
per leg continuous current, the VS-HFA30TA60C... is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
®
product line features extremely low values of
peak recovery current (I
RRM
) and does not exhibit any
tendency to “snap-off” during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30TA60C... is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
per leg
per device
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
15
30
150
60
74
29
-55 to +150
W
°C
A
UNITS
V
Revision: 14-Jul-15
Document Number: 94070
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA30TA60CPbF, VS-HFA30TA60C-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V
BR
I
R
= 100 μA
I
F
= 15 A
Maximum forward voltage
V
FM
I
F
= 30 A
I
F
= 15 A, T
J
= 125 °C
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
See fig. 2
See fig. 3
See fig. 1
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.3
1.5
1.2
1.0
400
25
8
MAX.
-
1.7
2.0
1.6
10
1000
50
-
μA
pF
nH
V
UNITS
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5 and 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of
recovery current during t
b
See fig. 8
SYMBOL
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
dI
(rec)M
/dt1
dI
(rec)M
/dt2
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
19
42
70
4.0
6.5
80
220
250
160
MAX.
-
60
120
6.0
10
180
600
-
A/μs
-
A
ns
UNITS
nC
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
Lead temperature
Junction to case,
single leg conducting
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-220AB
SYMBOL
T
lead
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
MIN.
-
TYP.
-
MAX.
300
1.7
R
thJC
-
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
-
-
-
-
6.0
(5.0)
-
-
0.25
6.0
0.21
-
0.85
K/W
40
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
HFA30TA60C
Revision: 14-Jul-15
Document Number: 94070
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA30TA60CPbF, VS-HFA30TA60C-N3
www.vishay.com
Vishay Semiconductors
10 000
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (µA)
T
J
= 150 °C
1000
100
10
1
0.1
0.01
T
J
= 25 °C
T
J
= 125 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward
Current (Per Leg)
100
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
10
Z
thJC
- Thermal Response
1
P
DM
t
1
t
2
0.1
Single pulse
(thermal response)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 14-Jul-15
Document Number: 94070
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA30TA60CPbF, VS-HFA30TA60C-N3
www.vishay.com
Vishay Semiconductors
800
I
F
= 30 A
I
F
= 15 A
I
F
= 5.0 A
600
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
100
80
Q
rr
(nC)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
1000
t
rr
(ns)
60
400
40
200
20
0
100
0
100
1000
dI
F
/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt (Per Leg)
dI
F
/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt (Per Leg)
25
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
10 000
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
20
dI
(rec)M
/dt (A/µs)
I
RR
(A)
15
1000
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
10
5
0
100
1000
100
100
1000
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt (Per Leg)
dI
F
/dt (A/µs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt (Per Leg)
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 14-Jul-15
Document Number: 94070
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA30TA60CPbF, VS-HFA30TA60C-N3
www.vishay.com
Vishay Semiconductors
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
4
5
4
6
7
8
HF
2
-
-
-
-
-
-
-
-
A
3
30
4
TA
5
60
6
C
7
PbF
8
Vishay Semiconductors product
HEXFRED
®
family
Electron irradiated
Current rating (30 = 30 A)
Package:
TA = TO-220AB
Voltage rating (60 = 600 V)
Circuit configuration:
C = common cathode
Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-HFA30TA60CPbF
VS-HFA30TA60C-N3
QUANTITY PER T/R
50
50
MINIMUM ORDER QUANTITY
1000
1000
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-220ABPbF
TO-220AB-N3
www.vishay.com/doc?95222
www.vishay.com/doc?95225
www.vishay.com/doc?95028
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Revision: 14-Jul-15
Document Number: 94070
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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