MWI 300-12 E9
IGBT Modules
Sixpack
2
5
28
6
7
/2
29
3
4
8
9
3
20
2
22
9/0
23
24
5
4
25
26
27
7/8
6
I
C80
= 375 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.0 V
E72873
See outline drawing for pin arrangement
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
R
G
= 3.3
Ω;
T
VJ
= 25°C
Clamped inductive load; L = 00 µH
V
CE
= 900 V; V
GE
=
±
5 V; R
G
= 3.3
Ω
T
VJ
= 25°C; non-repetitive; V
CEmax
< V
CES
T
C
= 25°C
Conditions
Conditions
T
VJ
= 25°C to 25°C
Maximum Ratings
200
±
20
530
375
I
CM
= 750
V
CEK
< V
CES
0
2.
V
V
A
A
A
µs
kW
Features
• NPT
3
IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• AC motor control
• AC servo and robot drives
• power supplies
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
2.0
2.2
4.5
T
VJ
= 25°C
T
VJ
= 25°C
0.4
80
00
650
20
9
32
22
2.3
0.06
max.
2.4
2.7
6.5
2
600
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
µC
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 300 A; V
GE
= 5 V
I
C
= 2 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 25°C
V
CE
= 600 V; I
C
= 300 A
V
GE
= ±5 V; R
G
= 3.3
Ω
T
VJ
= 25°C
T
VJ
= 25°C
V
CE
= 25 V; V
GE
= 0 V; f = MHz
V
CE
= 600 V; V
GE
= 5 V; I
C
= 300 A
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
-5
2007092a
MWI 300-12 E9
Diodes
Symbol
I
F80
I
FRM
I
2
t
Symbol
Conditions
T
C
= 80°C
t
p
= ms
T
VJ
= 25°C; t = 0 ms; V
R
= 0 V
Conditions
Maximum Ratings
300
600
2400
A
A
A
2
s
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
max.
2
240
0.
V
A
K/W
V
F
I
RM
R
thJC
I
F
= 300 A; V
GE
= 0 V; T
VJ
= 25°C
I
F
= 300 A; di
F
/dt = 2700 A/µs;
T
VJ
= 25°C; V
R
= 800 V
Temperature Sensor NTC
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
JM
T
stg
V
ISO
M
d
Conditions
operating
Maximum Ratings
-40...+25
+50
-40...+25
3400
3-6
3-6
°C
°C
°C
V~
Nm
Nm
Conditions
T = 25°C
Characteristic Values
min.
4.75
typ.
5.0
3375
max.
5.25
kΩ
K
I
ISOL
< mA; 50/60 Hz
Mounting torque (M5)
Terminal connection torque (M6)
Conditions
Symbol
R
therm-chip
*
)
Characteristic Values
min.
typ.
max.
Resistance terminal to chip
Creepage distance on surface
Strike distance in air
with heatsink compound
2.7
0
0.55
mΩ
mm
mm
d
S
d
A
R
thCH
Weight
0.0
900
K/W
g
*
)
V = V
CEsat
+ 2x R
therm-chip
·I
C
resp. V = V
F
+ 2x R·I
F
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2-5
2007092a
MWI 300-12 E9
Dimensions in mm (1 mm = 0.0394")
=
tolerance for all dimensions:
Diode
R
i
2.884·0
-5
.523·0
-3
7.67·0
-3
0.03
0.036
τ
i
·0
-5
5·0
-5
0.02
0.078
0.82
R
i
IGBT
τ
i
·0
-5
5·0
-5
0.05
0.075
0.69
2007092a
2.344·0
-5
5.97·0
-4
5.97·0
-3
0.023
0.028
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
3-5
MWI 300-12 E9
600
500
400
600
500
400
300
200
T
J
= 125°C
I
F
[A]
300
200
100
T
J
= 25°C
T
J
= 125°C
I
CE
[A]
100
T
J
= 25°C
0
0.0
0.5
1.0
1.5
V
F
[V]
2.0
2.5
3.0
0
6
8
V
GE
[V]
10
12
Fig. Typ. forward characteristics
of free wheeling diode
Fig. 2 Typ. transfer characteristics
600
T
J
= 25°C
600
11 V
13 V
15 V
17 V
19 V
T
J
= 125°C
500
400
I
C
[A]
400
I
C
[A]
11 V
13 V
15 V
17 V
19 V
300
9V
200
9V
200
100
0
0
2
V
CE
[V]
4
6
0
0
2
V
CE
[V]
4
6
Fig. 3 Typ. output characteristics
Fig. 4 Typ. output characteristics
20
15
10
V
GE
[V]
I
RM
[A]
V
CE
= 600 V
I
C
= 100 A
300
T
J
= 125°C
V
R
= 600 V
I
F
= 300 A
5.6
12
18
24
2.4
900
0
-5
I
RM
100
-10
-15
-20
0
1
2
3
4
0
1000
24
18
12
2.4
5.6
300
t
rr
Q
G
[µC]
2000
3000
-di/dt
[A/µs]
4000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics
of free wheeling diode
t
rr
[ns]
5
200
600
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
4-5
2007092a
MWI 300-12 E9
80
t
d(on)
240
70
60
800
60
E
[mJ]
V
CE
= 600 V
V
GE
= ±15 V
t
r
180
50
E
off
[mJ]
t
[ns]
t
d(off)
600
40
R
G
= 2.4
T
VJ
= 125°C
E
on
E
rec(off)
120
30
20
10
E
off
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 2.4
T
VJ
= 125°C
400
20
60
t
f
200
0
0
100
200
300
I
C
[A]
400
500
600
0
0
100
200
300
I
C
[A]
400
500
0
600
Fig. 7 Typ. turn on energy and switching times
versus collector current
180
150
120
E
[mJ]
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 300 A
T
VJ
= 125°C
t
d(on)
Fig. 8 Typ. turn off energy and switching times
versus collector current
90
80
70
60
E
off
[mJ]
t
[ns]
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 300 A
T
VJ
= 125°C
t
d(off)
E
off
600
500
400
t
r
4500
4000
3500
3000
90
60
30
0
E
on
E
rec(off)
300
200
100
0
40
30
20
10
0
0
2000
1500
1000
t
f
500
0
10
R
G
[ ]
20
30
40
10
20
R
G
[ ]
30
40
0
Fig. 9 Typ. turn on energy and switching times
versus gate resistor
18
16
E
rec(off)
[mJ]
42
36
0.12
0.10
Fig. 0 Typ. turn off energy and switching times
versus gate resistor
diode
Z
thJC
[K/W]
14
12
V
R
= 600 V
I
F
= ±15 V
T
VJ
= 125°C
12
18
24
12
2.4
5.6
Q
rr
[nC]
5.6
30
24
0.08
0.06
0.04
0.02
0.00
single pulse
IGBT
10
8
6
4
Qrr
18
24
18
12
Erec(off)
MWI300-12E9
1000
2000
di/dt
[A/µs]
3000
4000
1
10
100
t
[ms]
1000
10000
Fig. Typ. turn off energy and recovered charge
of free wheeling diode
Fig. 2 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
5-5
2007092a
t
[ns]
50
2500
t
[ns]
40
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