OptiMOS㈢2 Power-Transistor
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | Infineon(英飞凌) |
零件包装代码 | TO-251 |
包装说明 | IN-LINE, R-PSIP-T3 |
针数 | 3 |
Reach Compliance Code | compli |
ECCN代码 | EAR99 |
雪崩能效等级(Eas) | 65 mJ |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 85 V |
最大漏极电流 (Abs) (ID) | 35 A |
最大漏极电流 (ID) | 35 A |
最大漏源导通电阻 | 0.025 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-251 |
JESD-30 代码 | R-PSIP-T3 |
JESD-609代码 | e3 |
湿度敏感等级 | 1 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 175 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
峰值回流温度(摄氏度) | 260 |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 71 W |
最大脉冲漏极电流 (IDM) | 140 A |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | MATTE TIN |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
IPU25CNE8NG | IPB26CNE8NG | IPD25CNE8NG | IPI26CNE8NG | IPP26CNE8N | IPP26CNE8NG | |
---|---|---|---|---|---|---|
描述 | OptiMOS㈢2 Power-Transistor | OptiMOS㈢2 Power-Transistor | OptiMOS㈢2 Power-Transistor | OptiMOS㈢2 Power-Transistor | OptiMOS㈢2 Power-Transistor | OptiMOS㈢2 Power-Transistor |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | - | 符合 |
厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | - | Infineon(英飞凌) |
零件包装代码 | TO-251 | D2PAK | TO-252 | TO-262AA | - | TO-220AB |
包装说明 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | - | GREEN, PLASTIC, TO-220, 3 PIN |
针数 | 3 | 4 | 4 | 3 | - | 3 |
Reach Compliance Code | compli | compli | compli | compli | - | compli |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 |
雪崩能效等级(Eas) | 65 mJ | 65 mJ | 65 mJ | 65 mJ | - | 65 mJ |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 85 V | 85 V | 85 V | 85 V | - | 85 V |
最大漏极电流 (Abs) (ID) | 35 A | 35 A | 35 A | 35 A | - | 35 A |
最大漏极电流 (ID) | 35 A | 35 A | 35 A | 35 A | - | 35 A |
最大漏源导通电阻 | 0.025 Ω | 0.026 Ω | 0.025 Ω | 0.026 Ω | - | 0.026 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-251 | TO-263AB | TO-252 | TO-262AA | - | TO-220AB |
JESD-30 代码 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | - | R-PSFM-T3 |
JESD-609代码 | e3 | e3 | e3 | e3 | - | e3 |
元件数量 | 1 | 1 | 1 | 1 | - | 1 |
端子数量 | 3 | 2 | 2 | 3 | - | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE |
最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C | - | 175 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
封装形式 | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | - | FLANGE MOUNT |
峰值回流温度(摄氏度) | 260 | NOT SPECIFIED | NOT SPECIFIED | 260 | - | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | N-CHANNEL |
最大功率耗散 (Abs) | 71 W | 71 W | 71 W | 71 W | - | 71 W |
最大脉冲漏极电流 (IDM) | 140 A | 140 A | 140 A | 140 A | - | 140 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
表面贴装 | NO | YES | YES | NO | - | NO |
端子面层 | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | - | MATTE TIN |
端子形式 | THROUGH-HOLE | GULL WING | GULL WING | THROUGH-HOLE | - | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 40 | - | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | - | SILICON |
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