Si4483ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
- 30
± 25
- 19.2
- 15.4
- 13.5
a, b
- 10.9
a, b
- 70
- 4.9
- 2.4
a, b
20
20
5.9
3.8
2.9
a, b
1.9
a, b
- 55 to 150
°C
W
mJ
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 85 °C/W.
d. Based on T
C
= 25 °C.
Document Number: 68982
S10-2543-Rev. B, 08-Nov-10
www.vishay.com
1
a, c
Symbol
t
10
s
Steady State
R
thJA
R
thJF
Typical
33
16
Maximum
42
21
Unit
°C/W
Si4483ADY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 3 A, V
GS
= 0 V
- 0.72
41
41
18
23
T
C
= 25 °C
- 4.9
- 70
- 1.2
70
70
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 1.5
I
D
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
V
DD
= - 15 V, R
L
= 1.5
I
D
- 10 A, V
GEN
= - 10 V, R
g
= 1
f = 1 MHz
0.4
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 10 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 10 A
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
3900
715
645
90
44.8
12.2
21.7
1.8
14
13
49
13
70
150
43
28
3.6
28
25
90
25
120
280
80
55
ns
135
68
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 25 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
- 10 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 10 A
V
GS
= - 4.5 V, I
D
= - 7 A
V
DS
= - 10 V, I
D
= - 10 A
- 30
0.0073
0.0127
32
0.0088
0.0153
- 1.2
- 30
- 30
5.3
- 2.1
- 2.6
± 100
-1
-5
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68982
S10-2543-Rev. B, 08-Nov-10
Si4483ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
V
GS
= 10
V
thru 5
V
56
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
42
V
GS
= 4
V
6
28
4
T
C
= 25 °C
2
T
C
= 125 °C
T
C
= - 55 °C
3
4
5
14
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.030
6000
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.024
C - Capacitance (pF)
4800
C
iss
3600
0.018
V
GS
= 4.5
V
0.012
V
GS
= 10
V
0.006
2400
C
oss
1200
C
rss
0
0
14
28
42
56
70
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 10 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
1.5
(Normalized)
1.8
I
D
= 10 A
Capacitance
V
GS
= 10
V
1.2
V
GS
= 4.5
V
0.9
6
V
DS
= 10
V
V
DS
= 15
V
4
V
DS
= 20
V
2
0
0
20
40
60
80
100
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68982
S10-2543-Rev. B, 08-Nov-10
www.vishay.com
3
Si4483ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.10
I
D
= 10 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
0.08
1
0.06
0.1
0.04
T
J
= 125 °C
0.02
T
J
= 25 °C
0.01
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.8
200
On-Resistance vs. Gate-to-Source Voltage
0.6
I
D
= 250
µA
V
GS(th)
Variance
(V)
0.4
Power (W)
160
120
0.2
I
D
= 1 mA
80
0.0
40
- 0.2
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
10 s
T
A
= 25 °C
Single Pulse
0.01
0.01
DC
BVDSS Limited
1
10
100
0.1
0.1
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
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Document Number: 68982
S10-2543-Rev. B, 08-Nov-10
Si4483ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
22.0
17.6
I
D
- Drain Current (A)
13.2
8.8
4.4
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
8.0
2.0
6.4
1.6
Power (W)
4.8
Power (W)
0
25
50
75
100
125
150
1.2
3.2
0.8
1.6
0.4
0.0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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