Freescale Semiconductor
Technical Data
Document Number: MMRF1007H
Rev. 0, 12/2013
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF power transistors designed for applications operating at frequencies
from 900 to 1215 MHz. These devices are suitable for use in defense and
commercial pulse applications, such as IFF and DME.
Typical Pulse Performance: V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
=
1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128
sec,
Duty
Cycle = 10%
Power Gain — 20 dB
Drain Efficiency — 56%
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
MMRF1007HR5
MMRF1007HSR5
965-
-1215 MHz, 1000 W, 50 V
LATERAL N-
-CHANNEL
BROADBAND
RF POWER MOSFETs
NI-
-1230H-
-4S
MMRF1007HR5
NI-
-1230S-
-4S
MMRF1007HSR5
PARTS ARE PUSH-
-PULL
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1)
1. Continuous use at maximum temperature will affect MTTF.
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
C
C
C
Freescale Semiconductor, Inc., 2013. All rights reserved.
MMRF1007HR5 MMRF1007HSR5
1
RF Device Data
Freescale Semiconductor, Inc.
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 67C, 1000 W Peak, 128
sec
Pulse Width, 10% Duty Cycle,
50 Vdc, I
DQ
= 150 mA
Case Temperature 62C, Mode--S Pulse Train, 80 Pulses of 32
sec
On, 18
sec
Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, I
DQ
= 150 mA
Symbol
Z
JC
Value
(1)
0.02
0.07
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B
B
IV
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(2)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 165 mA)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(2)
(V
DS
= 10 Vdc, I
D
= 1000
Adc)
Gate Quiescent Voltage
(3)
(V
DD
= 50 Vdc, I
D
= 150 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(2)
(V
GS
= 10 Vdc, I
D
= 2.7 Adc)
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.27
86.7
539
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
0.9
1.5
—
1.6
2.2
0.15
2.4
3
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
110
—
—
—
—
—
—
10
—
10
100
Adc
Vdc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 1000 W Peak (100 W Avg.),
f = 1030 MHz, 128
sec
Pulse Width, 10% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
D
IRL
19
54
—
20
56
--23
22
—
--9
dB
%
dB
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
2. Each side of device measured separately.
3. Measurement made with device in push--pull configuration.
(continued)
MMRF1007HR5 MMRF1007HSR5
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance — 1030 MHz
(In Freescale 1030 MHz Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 1000 W Peak
(100 W Avg.), f = 1030 MHz, Mode--S Pulse Train, 80 Pulses of 32
sec
On, 18
sec
Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle
Power Gain
Drain Efficiency
Burst Droop
G
ps
D
BD
rp
—
—
—
19.8
59.0
0.21
—
—
—
dB
%
dB
Typical Performance — 1090 MHz
(In Freescale 1090 MHz Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 1000 W Peak
(100 W Avg.), f = 1090 MHz, 128
sec
Pulse Width, 10% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
D
IRL
—
—
—
21.4
56.3
--25.3
—
—
—
dB
%
dB
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
3
V
BIAS
+
C1
C2
C3
C4
L1
BALUN 1
R1
C13
Z11
Z9
Z13
Z15
Z17
Z19 Z21
C17
C18
C21
C22
+
C23
+
C24
V
SUPPLY
Z3
RF
INPUT Z1
C9
C11
Z2
C10
Z4
Z5
Z7
RF
OUTPUT
Z23
Z6
Z8
C12
Z10
DUT
C15
C16
Z12
R2
Z14
C14
Z16
Z18
Z20 Z22
C19
L2
C20
BALUN 2
V
BIAS
+
C5
C6
C7
C8
+
C25
Z1
Z2
Z3, Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
0.140 x 0.083
0.300 x 0.083
0.746 x 0.220
0.075 x 0.631
0.329 x 0.631
0.326 x 0.631
0.240 x 0.631
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z21, Z22
Z23
PCB
C26
C27
+
C28
V
SUPPLY
0.143 x 0.631
0.135 x 0.631
0.102 x 0.632
0.130 x 0.631
0.736 x 0.215
0.410 x 0.083
Arlon CuClad 250GX--0300--55--22, 0.030,
r
= 2.55
Figure 2. MMRF1007HR5(HSR5) Test Circuit Schematic
Table 5. MMRF1007HR5(HSR5) Test Circuit Component Designations and Values
Part
Balun 1, 2
C1, C5
C2, C6
C3, C7
C4, C8, C17, C18, C19,
C20, C21, C25
C9
C12, C16
C10, C11, C13, C14, C15
C22, C26
C23, C24, C27, C28
L1, L2
R1, R2
Balun Anaren
22
F,
25 V Tantalum Capacitors
2.2
F,
50 V Chip Capacitors
0.22
F,
100 V Chip Capacitors
36 pF Chip Capacitors
1.0 pF Chip Capacitor
0.8--8.0 pF Variable Capacitors
5.1 pF Chip Capacitors
0.022
F,
100 V Chip Capacitors
470
F,
63 V Electrolytic Capacitors
Inductors 3 Turn
1000
,
1/3 W Chip Resistors
Description
3A412
TPSD226M025R
C1825C225J5RAC
C1210C224K1RAC
ATC100B360JT500XT
ATC100B1R0CT500XT
27291SL
ATC100B5R1CT500XT
C1825C223K1GAC
MCGPR63V477M13X26--RH
GA3094--AL
CRCW12101001FKEA
Manufacturer
Part Number
Anaren
AVX
Kemet
Kemet
ATC
ATC
Johanson
ATC
Kemet
Multicomp
Coilcraft
Vishay
MMRF1007HR5 MMRF1007HSR5
4
RF Device Data
Freescale Semiconductor, Inc.
C24
C1
C3
C4
R1
C12
C13
C21
C22
C23
C2
--
BALUN 2
BALUN 1
L1
C17
C18
C19
C20
C10
C9
C11
C15
CUT OUT AREA
C16
R2
C8
C7
C14
L2
C6
C25
C26
C5
C27
--
Figure 3. MMRF1007HR5(HSR5) Test Circuit Component Layout
C28
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
5
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