StrongIRFET™
IRFH8303PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
Qg
(typical)
R
G (typical)
(@T
C (Bottom)
= 25°C)
I
D
30
1.10
58
1.0
100
V
m
nC
Ω
A
PQFN 5 x 6 mm
Applications
Control MOSFET for synchronous buck converter
Features
Low R
DS(ON)
(≤ 1.10 m)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg Tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better Thermal Dissipation
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH8303PbF
Package Type
PQFN 5 mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH8303TRPbF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
43
Units
V
280
177
100
400
3.7
156
0.029
-55 to + 150
W/°C
°C
W
A
Notes
through
are on page 9
1
2017-01-24
IRFH8303PbF
Min.
30
–––
–––
–––
1.2
–––
–––
–––
–––
–––
158
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
0.90
1.30
1.7
-5.7
–––
–––
–––
–––
–––
119
58
14
8
19
17
27
33
1.0
21
91
48
65
7736
1363
743
Typ.
–––
Min.
–––
–––
–––
–––
–––
Parameter
Typ.
–––
–––
–––
33
51
Max.
100
A
400
1.0
50
77
Typ.
–––
–––
–––
–––
V
ns
nC
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– mV/°C Reference to 25°C, I
D
= 1.0mA
1.10
V
GS
= 10V, I
D
= 50A
m
1.70
V
GS
= 4.5V, I
D
= 50A
2.2
–––
1.0
150
100
-100
–––
179
87
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V
DS
= V
GS
, I
D
= 150µA
mV/°C
V
DS
= 24V, V
GS
= 0V
µA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20 V
nA
V
GS
= -20 V
S
V
DS
= 15 V, I
D
= 50A
V
GS
= 10V, V
DS
= 15V, I
D
= 50A
nC
nC
ns
pF
Max.
355
Units
V
DS
= 15V
V
GS
= 4.5V
I
D
= 50A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
V
GS(th)
I
DSS
I
GSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
g
Total Gate Charge
Q
gs1
Pre-Vth Gate-to-Source Charge
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
godr
Gate Charge Overdrive
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
Q
oss
Output Charge
R
G
Gate Resistance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
Fall Time
t
f
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Avalanche Characteristics
E
AS
Parameter
Single Pulse Avalanche Energy
V
DS
= 16V, V
GS
= 0V
V
DD
= 30V, V
GS
= 4.5V
I
D
= 50A
R
G
= 1.8
V
GS
= 0V
V
DS
= 24V
ƒ = 1.0MHz
Units
mJ
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
=50A, V
GS
=0V
T
J
= 25°C, I
F
= 50A, V
DD
= 15V
di/dt = 200A/µs
D
G
S
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Thermal Resistance
R
JC
(Bottom)
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Max.
0.8
21
34
21
Units
°C/W
2
2017-01-24
1000
TOP
VGS
15V
10V
7.0V
4.5V
4.0V
3.5V
3.0V
2.5V
IRFH8303PbF
1000
TOP
VGS
15V
10V
7.0V
4.5V
4.0V
3.5V
3.0V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
2.5V
2.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 50A
V GS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 150°C
TJ = 25°C
10
V DS = 15V
60µs PULSE WIDTH
1.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V GS, Gate-to-Source Voltage (V)
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 50A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V DS= 24V
V DS= 15V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
V DS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100 120 140 160
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2017-01-24
1000
IRFH8303PbF
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
TJ = 150°C
10
TJ = 25°C
1
V GS = 0V
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V SD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100µsec
100
Limited by package
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
DC
1msec
Fig 7.
Typical Source-Drain Diode Forward Voltage
300
250
ID, Drain Current (A)
V GS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.6
Limited by package
2.2
200
150
100
50
0
25
50
75
100
125
150
TC , Case Temperature (°C)
1.8
1.4
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.0
0.6
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
1
Thermal Response ( Z thJC ) °C/W
Fig 10.
Drain-to-Source Breakdown Voltage
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
2017-01-24
RDS(on), Drain-to -Source On Resistance (m
)
IRFH8303PbF
5.0
ID = 50A
4.0
EAS , Single Pulse Avalanche Energy (mJ)
1600
1400
1200
1000
800
600
400
200
0
ID
TOP
14A
25A
BOTTOM 50A
3.0
2.0
TJ = 125°C
1.0
TJ = 25°C
0.0
2
4
6
8
10
12
14
16
18
20
V GS, Gate -to -Source Voltage (V)
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart = 25°C (Single Pulse)
Avalanche Current (A)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14.
Single Avalanche Event: Pulse Current vs. Pulse Width
5
2017-01-24
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