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MRF5S4140HSR5: 产品描述RF MOSFET Transistors HV5 450MHZ 140W NI780H; 产品类别半导体分立半导体; 文件大小2MB，共20页; 制造商NXP(恩智浦); 官网地址https://www.nxp.com; 标准

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MRF5S4140HSR5概述

RF MOSFET Transistors HV5 450MHZ 140W NI780H

MRF5S4140HSR5规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	NXP(恩智浦)
产品种类 Product Category	RF MOSFET Transistors
RoHS	Details
Transistor Polarity	N-Channel
Id - Continuous Drain Current	1.25 A
Vds - Drain-Source Breakdown Voltage	65 V
技术 Technology	Si
Gain	21 dB
Output Power	28 W
最小工作温度 Minimum Operating Temperature	- 65 C
最大工作温度 Maximum Operating Temperature	+ 150 C
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	NI-780S-3
系列 Packaging	Cut Tape
系列 Packaging	Reel
Configuration	Single
高度 Height	4.32 mm
长度 Length	20.7 mm
Operating Frequency	0.4 GHz to 0.5 GHz
类型 Type	RF Power MOSFET
宽度 Width	9.91 mm
Channel Mode	Enhancement
Pd-功率耗散 Pd - Power Dissipation	427 W
工厂包装数量 Factory Pack Quantity	50
Vgs - Gate-Source Voltage	- 0.5 V, + 15 V
Vgs th - Gate-Source Threshold Voltage	4 V
单位重量 Unit Weight	0.167294 oz

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Freescale Semiconductor

Technical Data

Document Number: MRF5S4140H

Rev. 2, 5/2006

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies from 400 to 500 MHz. The high gain and broadband performance of

these devices make them ideal for large--signal, common--source amplifier

applications in 28--volt base station equipment.

•

Typical Single--Carrier N--CDMA Performance @ 465 MHz: V

= 28 Volts,

= 1250 mA, P

out

= 28 Watts Avg., IS--95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 21 dB

Drain Efficiency — 30%

ACPR @ 750 kHz Offset — --47.6 dBc in 30 kHz Bandwidth

•

Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 140 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

•

Internally Matched for Ease of Use

•

Qualified Up to a Maximum of 32 V

Operation

•

Integrated ESD Protection

•

Lower Thermal Resistance Package

•

Low Gold Plating Thickness on Leads, 40

″

Nominal.

•

RoHS Compliant

•

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF5S4140HR3

MRF5S4140HSR3

465 MHz, 28 W AVG., 28 V

SINGLE N-

-CDMA

LATERAL N-

-CHANNEL

RF POWER MOSFETs

ARCHIVE INFORMATION

CASE 465-

-06, STYLE 1

NI-

-780

MRF5S4140HR3

CASE 465A-

-06, STYLE 1

NI-

-780S

MRF5S4140HSR3

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Symbol

DSS

stg

Value

--0.5, +65

--0.5, +15

427

2.4

-- 65 to +150

150

200

Unit

Vdc

W/°C

°C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 73°C, 140 W CW

Case Temperature 74°C, 28 W CW

Symbol

θJC

Value

(1,2)

0.41

0.47

Unit

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

2. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF5S4140HR3 MRF5S4140HSR3

RF Device Data