• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
MICRO FOOT
Bump Side View
3
D
D
2
Backside View
•
Low Threshold Load Switch for
Portable Devices
- Low Power Consumption
- Increased Battery Life
•
Ultra Low Voltage Load Switch
D
8424
XXX
G
S
4
G
1
S
Device Marking:
8424
xxx = Date/Lot Traceability Code
N-Channel MOSFET
Ordering Information:
Si8424DB-T1-E1 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Package Reflow Conditions
d
IR/Convection
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
8
±5
12.2
9.8
8.1
b,c
6.5
b,c
20
5.2
2.3
b,c
6.25
4
2.78
b,c
1.78
b,c
- 55 to 150
260
°C
W
A
V
Unit
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump.
Document Number: 74400
S13-1847-Rev. C, 19-Aug-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8424DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a,b
Maximum Junction-to-Foot (Drain)
Steady State
Symbol
R
thJA
R
thJF
Typ.
35
16
Max.
45
20
Unit
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 72 °C/W.
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= 5 V
V
DS
= 8 V, V
GS
= 0 V
V
DS
= 8 V, V
GS
= 0 V , T
J
= 70 °C
V
DS
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 1 A
Drain-Source On-State
Resistance
a
V
GS
= 2.5 V, I
D
= 1 A
R
DS(on)
V
GS
= 1.8 V, I
D
= 1 A
V
GS
= 1.5 V, I
D
= 1 A
V
GS
= 1.2 V, I
D
= 1 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 4 V, R
L
= 4
I
D
1 A, V
GEN
= – 4.5 V, R
g
= 1
V
GS
= 0.1 V, f = 1 MHz
V
DS
= 4 V, V
GS
= 5 V, I
D
= 1 A
V
DS
= 4 V, V
GS
= 4.5 V, I
D
= 1 A
V
DS
= 4 V, V
GS
= 0 V, f = 1 MHz
1950
610
350
22
20
3.5
1.8
13
8
12
110
40
12
18
165
60
ns
33
30
nC
pF
g
fs
V
DS
= 4 V, I
D
= 1 A
20
0.025
0.027
0.029
0.032
0.049
8.3
0.031
0.033
0.035
0.043
0.077
13
S
0.35
8
8.9
- 2.5
1
100
1
10
µA
A
mV/°C
V
nA
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 74400
S13-1847-Rev. C, 19-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8424DB
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= – 1 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1 A, V
GS
= 0 V
0.6
104
88
26
78
ns
T
C
= 25 °C
6.25
20
1.2
156
132
A
V
ns
nC
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
20
V
GS
= 5 thru 1.5 V
20
I
D
- Drain Current (A)
10
I
D
- Drain Current (A)
15
15
10
T
C
= 125 °C
5
T
C
= 25 °C
5
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
0
0.0
T
C
= - 55 °C
0.3
0.6
0.9
1.2
1.5
1.8
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Document Number: 74400
S13-1847-Rev. C, 19-Aug-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8424DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
0.12
3000
R
DS(on)
- On-Resistance ( )
2400
C - Capacitance (pF)
0.09
V
GS
= 1.2
V
C
iss
1800
0.06
V
GS
= 1.5
V
V
GS
= 1.8
V
1200
C
oss
600
C
rss
0
0.03
V
GS
= 2.5
V
0.00
0
5
V
GS
= 4.5
V
10
I
D
- Drain Current (A)
15
20
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
R
DS(on)
vs. Drain Current
5
R
DS(on)
- On-Resistance (Normalized)
I
D
= 1 A
4
1.5
I
D
= 1 A
1.3
Capacitance
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 4 V
3
V
GS
= 4.5 V, 2.5 V, 1.8 V
1.1
V
GS
= 1.5 V
0.9
2
V
DS
= 6.4 V
1
0
0
5
10
15
20
25
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
10.00
On-Resistance vs. Junction Temperature
0.050
I
D
= 1 A
0.045
I
S
- Source Current (A)
1.00
T
A
= 150 °C
R
DS(on)
- On-Resistance ()
0.040
0.035
T
A
= 125 °C
0.030
0.10
T
A
= 25 °C
0.025
T
A
= 25 °C
0.01
0.0
0.020
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Forward Diode Voltage vs Temp
R
DS(on)
vs V
GS
vs Temperature
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 74400
S13-1847-Rev. C, 19-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8424DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
0.8
80
0.7
I
D
= 250 µA
0.6
Power (W)
- 25
0
25
50
75
100
125
150
60
V
GS(th)
(V)
0.5
40
0.4
20
0.3
0.2
- 50
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
T
F
- Foot Temperature (°C)
8
7
6
I
D
- Drain Current (A)
Power (W)
5
4
3
2
1
0
0
25
50
75
100
125
150
Case Temperature ( °C)
Current Derating**
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
P(t) = 100 ms
P(t) = 1s
1
P(t) = 10s
DC
0.1
Power Derating
0.01
T
A
= 25 °C
Single Pulse
0.001
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
** The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-
foot thermal resistance, and is more useful in settling the upper dissipation limit
for cases where additional heatsinking is used. It is used to determine the
current rating, when this rating falls below the package limit.
Safe Operating Area, Junction-to-Ambient
Document Number: 74400
S13-1847-Rev. C, 19-Aug-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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