SiSA12ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L =0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
Limit
30
+ 20, - 16
25
g
25
g
22
b, c
18
b, c
80
23
g
2.9
b, c
15
11
28
18
3.5
b, c
2.2
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
P
D
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
29
3.6
Maximum
36
4.5
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
g. Package limited.
Document Number: 63234
S13-0113-Rev. A, 21-Jan-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiSA12ADN
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
rss
/C
iss
Ratio
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs,
T
J
= 25 °C
I
S
= 10 A
0.86
27
15
13
14
T
C
= 25 °C
25
80
1.2
55
30
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
0.3
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
C
iss
C
oss
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
2070
600
51
0.025
29.5
13.6
5.2
2.6
16
1.7
10
10
25
10
20
15
22
10
3.4
20
20
50
20
40
30
45
20
ns
0.050
45
21
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= + 20, - 16 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 7 A
V
DS
= 10 V, I
D
= 10 A
25
0.0032
0.0044
51
0.0043
0.0060
1.1
30
16
-5
2.2
± 100
1
10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 63234
S13-0113-Rev. A, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiSA12ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
V
GS
= 10 V thru 4 V
50
I
D
- Drain Current (A)
16
I
D
- Drain Current (A)
20
40
V
GS
= 3 V
12
T
C
= 25
°C
8
T
C
= 125
°C
4
T
C
= - 55
°C
0
30
20
10
0
0.0
0.5
1.0
1.5
V
DS
- Drain-to-Source Voltage (V)
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
-
Gate-to-Source
Voltage (V)
3.5
Output Characteristics
0.006
2400
Transfer Characteristics
C
iss
2000
R
DS(on)
- On-Resistance (Ω)
0.005
C - Capacitance (pF)
V
GS
= 4.5 V
1600
0.004
V
GS
= 10 V
0.003
1200
C
oss
800
400
C
rss
0
0
10
20
30
40
50
60
0
5
I
D
- Drain Current (A)
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
0.002
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 7.5 V
6
V
DS
= 15 V
4
V
DS
= 24 V
1.8
I
D
= 10 A
1.6
Capacitance
V
GS
= 10 V
1.4
V
GS
= 4.5 V
1.2
1.0
2
0.8
0
0
6
12
18
24
30
Q
g
- Total
Gate
Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63234
S13-0113-Rev. A, 21-Jan-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiSA12ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.010
I
D
= 10 A
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
10
0.008
I
S
-
Source
Current (A)
0.006
T
J
= 125
°C
1
T
J
= 25
°C
0.004
T
J
= 25
°C
0.002
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.000
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source-Drain Diode Forward Voltage
2.0
100
On-Resistance vs. Gate-to-Source Voltage
1.8
80
Power (W)
V
GS(th)
(V)
1.6
60
1.4
I
D
= 250 μA
40
1.2
20
1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
1000
Limited by R
DS(on)
*
100
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
10
100 μs
1 ms
10 ms
1
100 ms
0.1
T
A
= 25
°C
BVDSS Limited
1s
10 s
DC
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 63234
S13-0113-Rev. A, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiSA12ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
40
32
60
I
D
- Drain Current (A)
24
40
Power (W)
Package Limited
16
20
8
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63234
S13-0113-Rev. A, 21-Jan-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
ABI Research最近评选并公布了全球超高频无源和高频无源 RFID芯片的前十大制造商。 前十大超高频无源芯片制造商是： 前十大高频无源芯片制造商是： 超高频的得奖名单并不出人意外，因为实际上似乎总是前三家公司获得大订单。ABI分析家 Mike Liard称，ABI很容易就评选出 Alien、Avery,和 Raflatac为全球...[详细]
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