MJ21195G - PNP
MJ21196G - NPN
Silicon Power Transistors
The MJ21195G and MJ21196G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
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•
•
•
•
•
Total Harmonic Distortion Characterized
High DC Current Gain
Excellent Gain Linearity
High SOA
These Devices are Pb−Free and are RoHS Compliant*
16 AMPERES
COMPLEMENTARY SILICON-
POWER TRANSISTORS
250 VOLTS, 250 WATTS
SCHEMATIC
PNP
NPN
CASE 3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
−
1.5V
Collector Current
Collector Current
−
Continuous
−
Peak (Note 1)
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
CM
I
B
P
D
T
J
, T
stg
Value
250
400
5
400
16
30
5
250
1.43
−65
to +200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
_C
1
BASE
CASE 3
1
BASE
EMITTER 2
EMITTER 2
Base Current
−
Continuous
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
3
1
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5
ms,
Duty Cycle
≤
10%.
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ2119x = Device Code
x = 5 or 6
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
0.7
Unit
_C/W
MJ2119xG
AYWW
MEX
ORDERING INFORMATION
Device
MJ21195G
MJ21196G
Package
TO−204
(Pb−Free)
TO−204
(Pb−Free)
Shipping
100 Units / Tray
100 Units / Tray
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
September, 2013
−
Rev. 6
1
Publication Order Number:
MJ21195/D
MJ21195G
−
PNP
MJ21196G
−
NPN
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C
±
5°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 80 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, V
CE
= 5 Vdc)
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
(Matched pair h
FE
= 50 @ 5 A/5 V)
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤2%
h
FE
unmatched
h
FE
matched
T
HD
−
−
f
T
C
ob
4
−
0.8
0.08
−
−
−
−
−
500
MHz
pF
%
h
FE
75
25
8
−
−
−
−
2.2
Vdc
Vdc
−
−
−
−
1.4
4
−
I
S/b
Adc
5
2.5
−
−
−
−
V
CEO(sus)
I
CEO
I
EBO
I
CEX
250
−
−
−
−
−
−
−
−
100
100
100
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Typical
Max
Unit
V
BE(on)
V
CE(sat)
PNP MJ21195G
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
CE
= 10 V
5V
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
f T, CURRENT BANDWIDTH PRODUCT (MHz)
f T, CURRENT BANDWIDTH PRODUCT (MHz)
NPN MJ21196G
10 V
V
CE
= 5 V
T
J
= 25°C
f
test
= 1 MHz
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
T
J
= 25°C
f
test
= 1 MHz
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain Bandwidth Product
Figure 2. Typical Current Gain Bandwidth Product
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2
MJ21195G
−
PNP
MJ21196G
−
NPN
TYPICAL CHARACTERISTICS
PNP MJ21195G
1000
1000
NPN MJ21196G
h FE , DC CURRENT GAIN
T
J
= 100°C
100
25°C
h FE , DC CURRENT GAIN
100
T
J
= 100°C
25°C
- 25°C
V
CE
= 20 V
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
- 25°C
V
CE
= 20 V
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 3. DC Current Gain, V
CE
= 20 V
Figure 4. DC Current Gain, V
CE
= 20 V
PNP MJ21195G
1000
1000
NPN MJ21196G
h FE , DC CURRENT GAIN
100
T
J
= 100°C
25°C
h FE , DC CURRENT GAIN
100
T
J
= 100°C
25°C
- 25°C
V
CE
= 5 V
- 25°C
V
CE
= 5 V
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 5. DC Current Gain, V
CE
= 5 V
PNP MJ21195G
30
I
B
= 2 A
IC , COLLECTOR CURRENT (A)
1.5 A
1A
0.5 A
IC , COLLECTOR CURRENT (A)
25
20
15
10
5.0
T
J
= 25°C
0
0
10
15
20
5.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
0
0
30
25
20
Figure 6. DC Current Gain, V
CE
= 5 V
NPN MJ21196G
I
B
= 2 A
1.5 A
1A
0.5 A
15
10
5.0
T
J
= 25°C
5.0
10
15
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
Figure 7. Typical Output Characteristics
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Figure 8. Typical Output Characteristics
MJ21195G
−
PNP
MJ21196G
−
NPN
TYPICAL CHARACTERISTICS
PNP MJ21195G
3.0
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
V
BE(sat)
1.0
V
CE(sat)
0.5
0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
T
J
= 25°C
I
C
/I
B
= 10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
V
CE(sat)
T
J
= 25°C
I
C
/I
B
= 10
V
BE(sat)
NPN MJ21196G
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJ21195G
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
10
T
J
= 25°C
10
T
J
= 25°C
NPN MJ21196G
V
CE
= 5 V (DASHED)
1.0
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
1.0
V
CE
= 20 V (SOLID)
0.1
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
0.1
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
100
IC , COLLECTOR CURRENT (AMPS)
10 ms
10
1 sec
250 ms
1.0
50 ms
0.1
1.0
10
100
1000
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling
ability of a transistor; average junction temperature
and secondary breakdown. Safe operating area curves
indicate I
C
−
V
CE
limits of the transistor that must be
observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the
curves indicate.
The data of Figure 13 is based on T
J(pk)
= 200°C;
T
C
is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the
power than can be handled to values less than the
limitations imposed by second breakdown.
Figure 13. Active Region Safe Operating Area
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4
MJ21195G
−
PNP
10000
C
ib
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
MJ21196G
−
NPN
10000
C
ib
1000
1000
C
ob
T
J
= 25°C
f
test
= 1 MHz
100
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (VOLTS)
T
J
= 25°C
f
test
= 1 MHz
100
0.1
1.0
10
C
ob
100
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 14. MJ21195 Typical Capacitance
Figure 15. MJ21196 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
1.0
0.9
0.8
0.7
0.6
10
100
1000
FREQUENCY (Hz)
10000
100000
Figure 16. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
50
W
DUT
0.5
W
SOURCE
AMPLIFIER
0.5
W
8.0
W
DUT
-50 V
Figure 17. Total Harmonic Distortion Test Circuit
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