VS-12F(R) Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 12 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V V
RRM
• Designed and qualified for industrial and consumer level
DO-4 (DO-203AA)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
12 A
DO-4 (DO-203AA)
Single
TYPICAL APPLICATIONS
• Battery charges
• Converters
• Power supplies
• Machine tool controls
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
C
TEST CONDITIONS
VALUES
12
144
19
265
280
351
320
100 to 1200
-65 to +175
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
40
VS-12F(R)
60
80
100
120
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
150
275
500
725
950
1200
1400
12
I
RRM
MAXIMUM
AT T
J
= 175 °C
mA
Revision: 11-Jan-18
Document Number: 93487
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12F(R) Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
VALUES
12
144
19
265
280
225
Sinusoidal half wave,
initial T
J
= T
J
maximum
235
351
320
250
226
3510
0.77
0.97
10.70
m
r
f2
V
FM
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 38 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
6.20
1.26
V
A
2
s
V
A
2
s
A
UNITS
A
°C
A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads
Allowable mounting torque
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
-65 to +175
-65 to +200
2
0.5
1.5 + 0 - 10 %
13
1.2 + 0 - 10 %
10
7
0.25
UNITS
°C
K/W
N·m
lbf · in
N·m
lbf · in
g
oz.
DO-4 (DO-203AA)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.33
0.41
0.53
0.78
1.28
RECTANGULAR CONDUCTION
0.26
0.44
0.58
0.81
1.29
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93487
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12F(R) Series
www.vishay.com
Vishay Semiconductors
180
12F(R)
Series
R
thJC
(DC) = 2.0 K/W
180
12F(R)
Series
R
thJC
(DC) = 2.0 K/W
Maximum Allowable
Case Temperature (°C)
170
Conduction Angle
160
Maximum Allowable
Case Temperature (°C)
170
160
Conduction Period
150
30°
60°
140
90°
120°
180°
130
DC
16
20
150
30°
140
0
2
4
6
8
10
60°
90°
120°
180°
12
14
0
4
8
12
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
14
Maximum Average Forward
Power Loss (W)
12
10
8
6
180°
120°
90°
60°
30°
RMS Limit
10
K/W
12
K/W
R
th
S
A
=8
6K
/W
K/W
-D
elta
R
15 K
/W
20 K
/W
30 K /W
Conduction Angle
4
2
0
0
2
4
6
8
10
12
14
25
50
75
100
12F(R)
Series
T
J
= 175°C
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
20
Maximum Average Forward
Power Loss (W)
16
12
DC
180°
120°
90°
60°
30°
R
t
8 K/
W
10 K
/W
h
S
A
=6
K/W
-D
elta
R
8
RMS Limit
Conduction Period
12 K
/W
15 K
/W
20 K/W
30 K/W
4
12F(R)
Series
TJ = 175°C
0
4
8
12
16
20
25
50
75
100
0
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93487
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12F(R) Series
www.vishay.com
Peak Half
Sine
Wave Forward Current (A)
250
225
200
175
150
125
100
1
10
100
1000
T
J
= 25°C
T
J
= 175°C
100
Vishay Semiconductors
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following
Surge.
Initial T
J
= 175°C
@ 60 Hz 0.0083
s
@ 50 Hz 0.0100
s
10
12F(R)
Series
12F(R)
Series
1
0
1
2
3
4
5
6
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
275
250
225
200
175
150
125
100
0.01
0.1
1
12F(R)
Series
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Z
thJC
- Transient Thermal Impedance (°C/W)
Peak Half
Sine
Wave Forward Current (A)
Maximum Non Repetitive
Surge
Current
Versus Pulse Train Duration.
Initial T
J
= 175°C
No Voltage Reapplied
Rated V
RRM
Reapplied
10
Steady State
Value
R
thJC
= 2.0 K/W
(DC Operation)
1
12F(R)
Series
0.1
0.001
0.01
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
-
-
-
-
-
-
12
2
F
3
R
4
120
5
M
6
Vishay
Semiconductors
product
Current rating: code = I
F(AV)
F =
standard
device
None =
stud
normal polarity (cathode to
stud)
R =
stud
reverse polarity (anode to
stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None =
stud
base DO-4 (DO-203AA) 10-32UNF-2A
M =
stud
base DO-4 (DO-203AA) M5 x 0.8
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95311
Revision: 11-Jan-18
Document Number: 93487
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AA (DO-4)
DIMENSIONS
in millimeters (inches)
3.30 (0.13)
4.00 (0.16)
0.8 ± 0.1
(0.03 ± 0.004)
+ 0.3
0
+ 0.01
(0.08
0
)
2
5.50 (0.22) MIN.
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
20.30 (0.80) MAX.
10.20 (0.40)
MAX.
3.50 (0.14)
R 0.40
R (0.02)
Ø 6.8 (0.27)
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
11 (0.43)
Document Number: 95311
Revision: 30-Jun-08
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
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