SO ................................................................. -40NC to +105NC
TDFN ............................................................. -40NC to +125NC
Storage Temperature Range............................ -65NC to +150NC
Junction Temperature Range........................... -40NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
PACKAGE THERMAL CHARACTERISTICS (Note 1)
SO
Junction-to-Ambient Thermal Resistance (q
JA
) ........132°C/W
Junction-to-Case Thermal Resistance (q
JC
)...............38°C/W
µMAX
Junction-to-Ambient Thermal Resistance (q
JA
) .....206.3°C/W
Junction-to-Case Thermal Resistance (q
JC
)...............42°C/W
TDFN
Junction-to-Ambient Thermal Resistance (q
JA
) ..........41°C/W
Junction-to-Case Thermal Resistance (q
JC
).................8°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
CC
= +5V
Q10%,
T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
CC
= +5V, T
A
= +25NC.) (Note 2)
PARAMETER
Power-Supply Range
Supply Current
Shutdown Supply
Current
DRIVER
Differential Driver
Output
Differential Driver
Peak-to-Peak Output
Change in Magnitude
of Differential Output
Voltage
Driver Common-
Mode Output Voltage
Change in Common-
Mode Voltage
Driver Short-Circuit
Output Current
(Note 5)
2
SYMBOL
V
CC
I
CC
I
SH
CONDITIONS
DE = 1,
RE
= 0 or
DE = 0,
RE
= 0 or
DE = 1,
RE
= 1; no load
DE = 0,
RE
= 1
MIN
4.5
TYP
MAX
5.5
UNITS
V
mA
2.5
4
15
FA
|V
OD
|
V
ODPP
R
L
= 54I, DI = V
CC
or GND; Figure 1
Figure 2 (Note 3)
R
L
= 54I; Figure 1 (Note 4)
R
L
= 54I; Figure 1
R
L
= 54I; Figure 1 (Note 4)
0V
P
V
OUT
P
+12V; output low
-7V
P
V
OUT
P
V
CC
; output high
2.1
4.0
-0.2
0
1.8
-0.2
6.8
+0.2
3
+0.2
+250
-250
V
V
V
V
V
DV
OD
V
OC
DV
OC
I
OSD
mA
Maxim Integrated
MAX14770E
High-ESD Profibus RS-485 Transceiver
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +5V
Q10%,
T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
CC
= +5V, T
A
= +25NC.) (Note 2)
PARAMETER
Driver Short-Circuit
Foldback Output
Current (Note 5)
LOGIC INPUTS
Driver Input High
Voltage
Driver Input Low
Voltage
Driver Input
Hysteresis
Driver Input Current
Input Impedance in
Hot Swap
RECEIVER
Input Current (A, B)
Differential Input
Capacitance
Receiver Differential
Threshold Voltage
Receiver Input
Hysteresis
LOGIC OUTPUT
Output High Voltage
Output Low Voltage
Three-State Receiver
Output Current
Receiver Input
Resistance
Receiver Output
Short-Circuit Current
Thermal-Shutdown
Threshold
Thermal-Shutdown
Hysteresis
ESD Protection, A
and B Pins
Maxim Integrated
SYMBOL
I
OSDF
CONDITIONS
(V
CC
- 1V)
P
V
OUT
P
+12V; output low
-7V
P
V
OUT
P
+1V; output high
MIN
-15
TYP
MAX
UNITS
mA
+15
V
IH
V
IL
V
HYS
I
IN
R
DE
R
RE
DE, DI,
RE
DE, DI,
RE
DE, DI,
RE
DE, DI,
RE
Figure 11 until the first low-to-high transition of DE
occurs
Figure 11 until the first high-to-low transition of
RE
occurs
DE = GND, V
CC
= V
GND
or
+5.5V
V
IN
= 12V
V
IN
= -7V
2.0
0.8
50
-1
+1
V
V
mV
FA
1
5.6
10
kW
I
A,
I
B
C
AB
V
TH
DV
TH
+250
-200
8
-200
-125
15
-50
FA
pF
mV
mV
Between A and B, DE =
RE
= GND at 6MHz
-7V
P
V
CM
P
12V
V
CM
= 0V
V
OH
V
OL
I
OZR
R
IN
I
OSR
I
OUT
= -6mA, V
A
- V
B
= V
TH
I
OUT
= 6mA, V
A
- V
B
= -V
TH
0V
P
V
OUT
P
V
CC
-7V
P
V
CM
P
12V
0V
P
V
RO
P
V
CC
4
0.4
-1
48
-110
+110
+1
V
V
FA
kI
mA
PROTECTION SPECIFICATIONS
V
TS
V
TSH
HBM
IEC 61000-4-2 Air-Gap Discharge to GND
IEC 61000-4-2 Contact Discharge to GND
+160
15
±35
±20
±10
3
NC
NC
kV
MAX14770E
High-ESD Profibus RS-485 Transceiver
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +5V
Q10%,
T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
CC
= +5V, T
A
= +25NC.) (Note 2)
PARAMETER
ESD Protection, All
Other Pins
Driver Propagation
Delay
Differential Driver
Output Skew |t
DPLH
- t
DPHL
|
Driver Output
Transition Skew
|t
t(MLH)
|, |t
t(MHL)
|
Driver Differential
Output Rise or Fall
Time
Maximum Data Rate
Driver Enable to
Output High
Driver Enable to
Output Low
Driver Disable Time
from Low
Driver Disable Time
from High
Driver Enable Skew
Time
Driver Disable Skew
Time
Driver Enable High—
Propagation Delay
Difference
Driver Enable Low—
Propagation Delay
Difference
Driver Enable from
Shutdown to Output
High
Driver Enable from
Shutdown to Output
Low
Time to Shutdown
t
DZH
t
DZL
t
DLZ
t
DHZ
|t
ZL
- t
ZH
|
|t
LZ
- t
HZ
|
t
DZH -
t
DPHL
R
L
= 500I, C
L
= 50pF; Figure 6
R
L
= 500I, C
L
= 50pF; Figure 7
R
L
= 500I, C
L
= 50pF; Figure 7
R
L
= 500I, C
L
= 50pF, Figure 6
R
L
= 500I, C
L
= 50pF; Figures 6 and 7
R
L
= 500I, C
L
= 50pF; Figures 6 and 7
t
DPLH
t
DPHL
t
DSKEW
SYMBOL
HBM
CONDITIONS
MIN
TYP
±2
MAX
UNITS
kV
DRIVER SWITCHING CHARACTERISTICS
R
L
= 54I, C
L
= 50pF; Figures 3 and 4
15
28
ns
R
L
= 54I, C
L
= 50pF; Figures 3 and 4
1.2
ns
t
TSKEW
R
L
= 54I, C
L
= 50pF; Figures 3 and 5
2
ns
t
LH
, t
HL
R
L
= 54I, C
L
= 50pF; Figures 3 and 4
20
7
15
ns
Mbps
25
25
20
20
48
48
40
40
8
8
ns
ns
ns
ns
ns
ns
8
20
ns
t
DZL -
t
DPHL
10
20
ns
t
DZL(SHDN)
R
L
= 500I, C
L
= 50pF; Figure 7 (Note 6)
46
100
Fs
t
DZH(SHDN)
t
SHDN
R
L
= 500I, C
L
= 50pF; Figure 6 (Note 6)
(Note 6)
50
46
100
800
Fs
ns
4
Maxim Integrated
MAX14770E
High-ESD Profibus RS-485 Transceiver
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +5V
Q10%,
T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
CC
= +5V, T
A
= +25NC.) (Note 2)
PARAMETER
Receiver Propagation
Delay
Receiver Output
Skew
Maximum Data Rate
Receiver Enable to
Output High
Receiver Enable to
Output Low
Receiver Disable
Time from Low
Receiver Disable
Time from High
Receiver Enable from
Shutdown to Output
High
Receiver Enable from
Shutdown to Output
Low
Time to Shutdown
Note
Note
Note
Note
2:
3:
4:
5:
t
RZH
t
RZL
t
RLZ
t
RHZ
S2 closed; R
L
= 1kI, C
L
= 15pF; Figure 10
S1 closed; R
L
= 1kI, C
L
= 15pF; Figure 10
S1 closed; R
L
= 1kI, C
L
= 15pF; Figure 10
S2 closed; R
L
= 1kI, C
L
= 15pF; Figure 10
S1 closed; R
L
= 1kI, C
L
= 15pF; Figure 10
(Notes 6, 7)
S2 closed; R
L
= 1kI, C
L
= 15pF; Figure 10
(Notes 6, 7)
(Note 6)
50
SYMBOL
t
RPLH
t
RPHL
t
RSKEW
CONDITIONS
MIN
TYP
MAX
UNITS
RECEIVER SWITCHING CHARACTERISTICS
C
L
= 15pF; Figures 8 and 9 (Note 7)
C
L
= 15pF; Figures 8 and 9 (Notes 7, 8)
20
30
30
30
30
28
2
ns
ns
Mbps
ns
ns
ns
ns
t
RZL(SHDN)
100
Fs
t
RZH(SHDN)
t
SHDN
100
800
Fs
ns
Devices are production tested at T
A
= +25NC. Specifications over temperature limits are guaranteed by design.
V
ODPP
is the difference in VOD, with the DI at high and DI at low.
DV
OD
and
DV
OC
are the changes in |V
OD
| and |V
OC
|, respectively, with the DI at high and DI at low.
The short-circuit output current applies to peak current just prior to foldback current limiting; the short-circuit foldback out-
put current applies during current limiting to allow a recovery from bus contention.
Note 6:
Shutdown is enabled by bringing
RE
high and DE low. If the enable inputs are in this state for less than 50ns, the device
is guaranteed not to enter shutdown. If the enable inputs are in this state for at least 800ns, the device is guaranteed to
have entered shutdown.
Note 7:
Capacitive load includes test probe and fixture capacitance.
Note 8:
Guaranteed by characterization; not production tested.
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