Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 40 Vdc, t = 1.0 s, Nonrepetitive)
I
s/b
2.87
−
Adc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
*Small−Signal Current Gain (I
C
= 1.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 kHz)
f
T
2.5
15
10
−
MHz
−
h
fe
120
−
*Small−Signal Current Gain Cutoff Frequency (V
CE
= 4.0 Vdc, I
C
= 1.0 Adc, f = 1.0 kHz)
f
hfe
kHz
*Indicates Within JEDEC Registration. (2N3055)
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
20
50
ms
10
6
4
2
1
0.6
0.4
0.2
6
BONDING WIRE LIMIT
THERMALLY LIMITED @ T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
10
20
40
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
60
500
ms
250
ms
dc
1 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
C
= 25°C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.
Figure 2. Active Region Safe Operating Area
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2
2N3055(NPN), MJ2955(PNP)
500
300
hFE , DC CURRENT GAIN
200
100
70
50
30
20
10
7.0
5.0
T
J
= 150°C
25°C
−55
°C
V
CE
= 4.0 V
hFE , DC CURRENT GAIN
100
70
50
30
20
25°C
−55
°C
T
J
= 150°C
200
V
CE
= 4.0 V
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
I
C
, COLLECTOR CURRENT (AMP)
10
10
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMP)
5.0 7.0
10
Figure 3. DC Current Gain, 2N3055 (NPN)
Figure 4. DC Current Gain, MJ2955 (PNP)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
2.0
T
J
= 25°C
1.6
I
C
= 1.0 A
1.2
4.0 A
8.0 A
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
2.0
T
J
= 25°C
1.6
I
C
= 1.0 A
4.0 A
8.0 A
1.2
0.8
0.8
0.4
0
5.0
0.4
0
5.0
10
20
50
100 200
500 1000 2000
I
B
, BASE CURRENT (mA)
5000
10
20
50
100 200
500 1000 2000
I
B
, BASE CURRENT (mA)
5000
Figure 5. Collector Saturation Region,
2N3055 (NPN)
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
0
0.1
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 4.0 V
T
J
= 25°C
1.6
V, VOLTAGE (VOLTS)
2.0
Figure 6. Collector Saturation Region,
MJ2955 (PNP)
T
J
= 25°C
1.2
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 4.0 V
0.8
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMP)
Figure 7. “On” Voltages, 2N3055 (NPN)
Figure 8. “On” Voltages, MJ2955 (PNP)
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3
2N3055(NPN), MJ2955(PNP)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
−T−
E
D
2 PL
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
−−− 1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−− 0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
−−− 26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−− 21.08
3.84
4.19
30.15 BSC
3.33
4.77
K
M
0.13 (0.005)
U
V
2
T Q
M
Y
M
L
G
1
−Y−
H
B
−Q−
0.13 (0.005)
M
T Y
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor
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