NLAS3699B
Dual DPDT Ultra−Low R
ON
Switch
The NLAS3699B is a dual independent ultra−low R
ON
DPDT
analog switch. This device is designed for low operating voltage, high
current switching of speaker output for cell phone applications. It can
switch a balanced stereo output. The NLAS3699B can handle a
balanced microphone/speaker/ring−tone generator in a monophone
mode. The device contains a break−before−make feature.
Features
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MARKING
DIAGRAMS
16
QFN−16
CASE 485AE
1
•
•
•
•
•
•
•
•
1.65 to 4.5 V V
CC
Function Directly from LiON Battery
Maximum Breakdown Voltage: 5.5 V
Tiny 3 x 3 mm QFN Pb−Free Package
Meet JEDEC MO−220 Specifications
Low Static Power
This is a Pb−Free Device*
Cell Phone Speaker/Microphone Switching
Ringtone−Chip/Amplifier Switching
Four Unbalanced (Single−Ended) Switches
Stereo Balanced (Push−Pull) Switching
Typical Applications
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
D1
16
1S1 Vcc 4S2
15
14
13
Important Information
•
ESD Protection:
1S2
1−2IN
2S1
D2
1
HBM (Human Body Model) > 8000 V
MM (Machine Model) > 400 V
•
Continuous Current Rating Through each Switch
±300
mA
•
Conforms to: JEDEC MO−220, Issue H, Variation VEED−6
•
Pin for Pin Compatible with STG3699
2
3
4
5
6
7
2S2 GND 3S1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 0
Publication Order Number:
NLAS3699B/D
ÇÇ
ÇÇ
1
8
•
Single Supply Operation
NLAB
3699
ALYWG
G
12
D4
4S1
3−4IN
3S2
11
10
9
D3
NLAS3699B
D
S2
S1
IN
Figure 1. Input Equivalent Circuit
PIN DESCRIPTION
QFN PIN #
1, 3, 5, 7, 9, 11, 13, 15
2, 10
4, 8, 12, 16
6
14
Symbol
1S1 to 4S1, 1S2 to 4S2
1−2IN, 3−4IN
D1 to D4
GND
V
CC
Independent Channels
Controls
Common Channels
Ground (V)
Positive Supply Voltage
Name and Function
TRUTH TABLE
IN
H
L
*High impedance.
S1
ON
OFF(*)
S2
OFF(*)
ON
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2
NLAS3699B
MAXIMUM RATINGS
Symbol
V
CC
V
IS
V
IN
I
anl1
I
anl−pk 1
I
clmp
t
r
, t
f
Positive DC Supply Voltage
Analog Input Voltage (V
NO
, V
NC
, or V
COM
)
Digital Select Input Voltage
Continuous DC Current from COM to NC/NO
Peak Current from COM to NC/NO, 10 duty cycle (Note 1)
Continuous DC Current into COM/NO/NC with respect to V
CC
or GND
Input Rise or Fall Time, SELECT
V
CC
= 1.6 V − 2.7 V
V
CC
= 3.0 V − 4.5 V
0
0
Parameter
Value
*0.5
to
)5.5
*0.5 v
V
IS
v
V
CC
*0.5 v
V
I
v)5.5
$300
$500
$100
20
10
Unit
V
V
V
mA
mA
mA
ns/V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Defined as 10% ON, 90% off duty cycle.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
IS
T
A
t
r
, t
f
DC Supply Voltage
Digital Select Input Voltage
Analog Input Voltage (NC, NO, COM)
Operating Temperature Range
Input Rise or Fall Time, SELECT
V
CC
= 1.6 V − 2.7 V
V
CC
= 3.0 V − 4.5 V
Parameter
Min
1.65
GND
GND
*40
0
0
Max
4.5
V
CC
V
CC
)85
20
10
Unit
V
V
V
°C
ns/V
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3
NLAS3699B
DC CHARACTERISTICS − Digital Section
(Voltages Referenced to GND)
Guaranteed Limit
Symbol
V
IH
Parameter
Minimum High−Level Input
Voltage, Select Inputs
Condition
V
CC
1.8
2.5
3.6
4.3
1.8
2.5
3.6
4.3
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
Select and V
IS
= V
CC
or GND
4.3
0
1.65 to 4.5
*405C
to 255C
1.2
1.7
2.2
2.6
0.4
0.5
0.7
0.9
$0.1
$0.5
$1.0
t855C
1.2
1.7
2.2
2.6
0.4
0.5
0.7
0.9
$1.0
$2.0
$2.0
Unit
V
V
IL
Maximum Low−Level Input
Voltage, Select Inputs
V
I
IN
I
OFF
I
CC
Maximum Input Leakage
Current, Select Inputs
Power Off Leakage Current
Maximum Quiescent Supply
Current (Note 2)
mA
mA
mA
DC ELECTRICAL CHARACTERISTICS − Analog Section
Guaranteed Maximum Limit
−405C to 255C
Symbol
R
ON
Parameter
NC/NO On−Resistance
(Note 2)
Condition
V
IN
v
V
IL
or V
IN
w
V
IH
V
IS
= GND to V
CC
I
IN
I
v
100 mA
I
COM
= 100 mA
V
IS
= 0 to V
CC
V
IS
= 1.3 V;
I
COM
= 100 mA
V
IS
= 1.5 V;
I
COM
= 100 mA
V
IS
= 2.2 V;
I
COM
= 100 mA
V
IN
= V
IL
or V
IH
V
NO
or V
NC
= 0.3 V
V
COM
= 4.0 V
V
IN
= V
IL
or V
IH
V
NO
0.3 V or 4.0 V with
V
NC
floating or
V
NC
0.3 V or 4.0 V with
V
NO
floating
V
COM
= 0.3 V or 4.0 V
V
CC
2.5
3.0
4.3
2.5
3.0
4.3
2.5
3.0
4.3
4.3
−10
Min
Max
0.65
0.6
0.55
0.15
0.15
0.15
0.06
0.05
0.05
10
−100
t855C
Min
Max
0.75
0.75
0.70
0.15
0.15
0.15
0.06
0.05
0.05
100
nA
Unit
W
R
FLAT
NC/NO On−Resistance Flatness
(Notes 2, 4)
W
DR
ON
On−Resistance Match Between Channels
(Notes 2 and 3)
W
I
NC(OFF)
I
NO(OFF)
I
COM(ON)
NC or NO Off Leakage Current (Note 2)
COM ON
Leakage Current
(Note 2)
4.3
−10
10
−100
100
nA
2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
3.
DR
ON =
R
ON(MAX)
− R
ON(MIN)
between nS1 or nS2.
4. Flatness is defined as the difference between the maximum and minimum value of on−resistance as measured over the specified analog
signal ranges.
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4
NLAS3699B
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Guaranteed Maximum Limit
V
CC
(V)
2.3 − 4.5
2.3 − 4.5
V
IS
(V)
1.5
1.5
*405C
to 255C
Min
Typ*
Max
50
30
t855C
Min
Max
60
40
Unit
ns
ns
ns
3.0
1.5
2
15
Symbol
t
ON
t
OFF
t
BBM
Parameter
Turn−On Time
Turn−Off Time
Minimum Break−Before−Make Time
Test Conditions
R
L
= 50
W,
C
L
= 35 pF
(Figures 3 and 4)
R
L
= 50
W,
C
L
= 35 pF
(Figures 3 and 4)
V
IS
= 3.0
R
L
= 50
W,
C
L
= 35 pF
(Figure 2)
Typical @ 25, V
CC
= 4.5 V
C
IN
C
SN
C
D
Control Pin Input Capacitance
SN Port Capacitance
D Port Capacitance When Switch is Enabled
7.0
72
230
pF
pF
pF
*Typical Characteristics are at 25°C.
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
Symbol
BW
Parameter
Maximum On−Channel −3dB
Bandwidth or Minimum Frequency
Response (Figure 12)
Maximum Feed−through On Loss
Off−Channel Isolation (Figure 13)
Charge Injection Select Input to
Common I/O (Figure 8)
Total Harmonic Distortion THD +
Noise (Figure 7)
Channel−to−Channel Crosstalk
Condition
V
IN
centered between V
CC
and GND
(Figure 5)
V
IN
=
0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND (Figure 5)
f = 100 kHz; V
IS
=
1 V RMS; C
L
= 5 pF
V
IN
centered between V
CC
and GND(Figure 5)
V
IN =
V
CC to
GND, R
IS
= 0
W,
C
L
= 1 nF
Q = C
L
x
DV
OUT
(Figure 6)
F
IS
= 20 Hz to 20 kHz, R
L
= R
gen
= 600
W,
C
L
= 50 pF
V
IS
=
2 V
PP
f = 100 kHz; V
IS
=
1 V RMS,
C
L
= 5 pF, R
L
= 50
W
V
IN
centered between V
CC
and GND (Figure 5)
V
CC
(V)
1.65 − 4.5
255C
Typical
20
Unit
MHz
V
ONL
V
ISO
Q
THD
VCT
1.65 − 4.5
1.65 − 4.5
1.65 − 4.5
4.5
1.65 − 4.5
−0.06
−62
50
0.01
−62
dB
dB
pC
%
dB
5. Off−Channel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch.
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5
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