Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
30
Channel-2
R
DS(on)
(Ω)
0.022 at V
GS
= 10 V
0.030 at V
GS
= 4.5 V
0.0155 at V
GS
= 10 V
0.0205 at V
GS
= 4.5 V
I
D
(A)
6.3
5.4
9.5
8.2
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT
®
Plus
• Compliant to RoHS directive 2002/95/EC
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(V)
Diode Forward Voltage
0.50 V at 1.0 A
I
F
(A)
2.0
D
1
8
7
6
5
Top View
D
1
D
2
D
2
D
2
Schottky Diode
G
1
G
2
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
S
1
N-Channel 1
MOSFET
S
2
A
Ordering Information:
Si4818DY-T1-E3
(Lead (Pb)-free)
Si4818DY-T1-GE3
(Lead (Pb)-free and Halogen-free)
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Channel-1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.3
1.4
0.9
6.3
5.4
30
0.9
1.0
0.64
2.2
2.4
1.5
- 55 to 150
5.3
4.2
10 s
Steady State
30
20
9.5
7.6
40
1.15
1.25
0.80
W
°C
7.0
5.6
A
10 s
Channel-2
Steady State
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typ.
72
100
51
Max.
90
125
63
Channel-2
Typ.
43
82
25
Max.
53
100
30
Schottky
Typ.
48
80
28
Max.
60
100
35
°C/W
Unit
Document Number: 71122
S09-0867-Rev. C, 18-May-09
www.vishay.com
1
Si4818DY
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= 20 V
V
DS
= 24 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
b
I
D(on)
V
DS
=
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 6.3 A
V
GS
= 10 V, I
D
= 9.5 A
V
GS
= 4.5 V, I
D
= 5.4 A
V
GS
= 4.5 V, I
D
= 8.2 A
V
DS
= 15 V, I
D
= 6.3 A
V
DS
= 15 V, I
D
= 9.5 A
I
S
= 1.3 A, V
GS
= 0 V
I
S
= 1 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
1.0
100
100
1
100
15
2000
20
30
0.018
0.0125
0.024
0.0165
17
28
0.7
0.47
8.0
15
1.75
5.3
3.2
4.6
1.5
0.5
10
15
5
5
26
44
8
12
30
32
0.022
0.0155
0.030
0.0205
V
nA
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
µA
A
Drain-Source On-State Resistance
b
R
DS(on)
Ω
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
g
fs
V
SD
S
1.1
0.5
12
23
nC
V
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Channel-1
V
DS
= 15 V, V
GS
= 5 V, I
D
= 6.3 A
Channel-2
V
DS
= 15 V, V
GS
= 5 V, I
D
= - 9.5 A
Channel-1
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
Channel-2
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
I
F
= 1.3 A, dI/dt = 100 A/µs
I
F
= 2.2 A, dI/dt = 100 µA/µs
6.1
2.6
20
30
10
10
50
80
16
24
60
70
Ω
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V
F
Test Conditions
I
F
= 1.0 A
I
F
= 1.0 A, T
J
= 125 °C
V
R
= 30 V
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
C
T
V
R
= 30 V, T
J
= 100 °C
V
R
= - 30 V, T
J
= 125 °C
V
R
= 10 V
Min.
Typ.
0.47
0.36
0.004
0.7
3.0
50
Max.
0.50
0.42
0.100
10
20
pF
mA
Unit
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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