VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A
FEATURES
Base
cathode
+
2
2
3
1
1
Anode -
3
- Anode
• Glass passivated pellet chip junction
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-252AA (D-PAK)
APPLICATIONS
• Output rectification and freewheeling diode in inverters,
choppers and converters
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-252AA (D-PAK)
8A
1000 V, 1200 V
1.3 V
150 A
80 ns
150 °C
Single die
0.6
• Input rectifications where severe
conducted EMI should be met
restrictions
on
DESCRIPTION
The VS-8EWF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time,
low forward voltage drop and low leakage current.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
8 A, T
J
= 25 °C
1 A, 100 A/μs
Range
CHARACTERISTICS
Sinusoidal waveform
VALUES
8
1000/1200
150
1.3
80
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-8EWF10S-M3
VS-8EWF12S-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1100
1300
I
RRM
AT 150 °C
mA
4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 96 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
8
125
150
78
110
1100
UNITS
A
A
2
s
A
2
s
Revision: 16-Jan-17
Document Number: 93377
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
8 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.3
25.6
0.93
0.1
4
UNITS
V
m
V
mA
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 8 A
pk
25 A/μs
T
J
= 25 °C
VALUES
270
4.2
1
0.6
UNITS
ns
A
μC
di
dt
I
rr
I
FM
t
a
t
rr
t
b
Q
rr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
Approximate weight
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
(1)
TEST CONDITIONS
VALUES
-40 to +150
UNITS
°C
DC operation
2.5
°C/W
50
1
0.03
g
oz.
8EWF10S
8EWF12S
Marking device
Case style TO-252AA (D-PAK)
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Revision: 16-Jan-17
Document Number: 93377
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
18
16
14
12
10
8
6
4
2
0
0
2
4
6
Ø
150
130
120
110
100
90
80
60°
70
90°
60
0
1
2
3
4
5
6
7
8
9
180°
120°
30°
Ø
Conduction angle
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
140
8EWF.. S Series
R
thJC
(DC) = 2.5 °C/W
DC
180°
120°
90°
60°
30°
RMS limit
Conduction period
8EWF..S Series
T
J
= 150 °C
8
10
12
14
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
140
8EWF..S Series
R
thJC
(DC) = 2.5 °C/W
130
120
At any rated load condition and with
rated Vrrm applied following
surge.
Initial Tj = 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
30°
80
70
60
0
2
4
6
60°
90°
Peak Half Sine Wave
Forward Current (A)
110
100
90
80
70
60
50
Ø
Conduction period
120°
180°
8
10
DC
12
14
40
30
1
VS-8EWF..S ..
Series
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
12
Maximum Average Forward
Power Loss (W)
10
8
6
4
2
0
0
1
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
170
150
130
110
90
70
50
30
10
0.01
VS-8EWF..S ..
Series
0.1
1
10
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
RMS limit
Ø
Conduction angle
8EWF..S Series
T
J
= 150 °C
2
3
4
5
6
7
8
9
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 16-Jan-17
Document Number: 93377
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com
1000
2.0
8EWF..S Series
T
J
= 25 °C
I
FM
= 10 A
Vishay Semiconductors
Instantaneous Forward Current (A)
Q
rr
- Typical Reverse
Recovery Charge (µC)
T
J
= 25 °C
T
J
= 150 °C
100
1.6
I
FM
= 8 A
1.2
I
FM
= 5 A
0.8
I
FM
= 2 A
0.4
I
FM
= 1 A
10
8EWF..S Series
1
0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
40
80
120
160
200
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
0.6
0.5
8EWF..S Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
5
8EWF..S Series
T
J
= 150 °C
I
FM
= 10 A
0.4
0.3
0.2
0.1
0
0
40
80
120
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
4
3
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
2
1
0
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
0.8
8EWF..S Series
T
J
= 150 °C
20
8EWF..S Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 8 A
12
I
FM
= 5 A
8
I
FM
= 2 A
I
FM
= 1 A
4
0.6
0.4
0.2
I
rr
- Typical Reverse
Recovery Current (A)
t
rr
- Typical Reverse
Recovery Time (µs)
I
FM
= 10 A
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
16
0
0
40
80
120
160
200
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
Revision: 16-Jan-17
Document Number: 93377
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com
25
8EWF..S Series
T
J
= 150 °C
I
FM
= 10 A
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
Vishay Semiconductors
I
rr
- Typical Reverse
Recovery Current (A)
20
15
10
5
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (°C/W)
10
Steady state value
(DC operation)
1
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
8EWF..S Series
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 16-Jan-17
Document Number: 93377
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
