MIEB 101H1200EH
IGBT Module
H Bridge
V
CES
= 1200 V
I
C25
= 183 A
V
CE(sat)
= 1.8 V
Part name
(Marking on product)
MIEB101H1200EH
13, 21
D1
9
10
19
15
D3
3
4
14, 20
T3
11
12
T4
D4
E72873
1
2
T1
D2
T2
Features:
• SPT
+
IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient
for easy parallelling
• MOS input, voltage controlled
• SONIC™ free wheeling diode
- fast and soft reverse recovery
- low operation forward voltage
• solderable pins for PCB mounting
• package with copper base plate
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
IXYS reserves the right to change limits, test conditions and dimensions.
20110615a
© 2011 IXYS All rights reserved
1-8
MIEB 101H1200EH
Ouput Inverter T1 - T4
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
rec(off)
RBSOA
SCSOA
t
SC
R
thJC
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
(on chip level)
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
Conditions
T
VJ
= 25°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 100 A; V
GE
= 15 V
I
C
= 4 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 100 A
inductive load
V
CE
= 600 V; I
C
= 100 A
V
GE
= ±15 V; R
G
= 10
W
L
S
= 70 nH
V
GE
= ±15 V; R
G
= 10
W;
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
1200
±20
±30
183
128
630
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.8
2.0
5
6
0.9
7430
750
120
55
460
240
9.5
9.7
4.2
2.2
2.4
7
0.3
3
200
T
VJ
= 125°C
V
CEK
= 1200 V
T
VJ
= 125°C
200
10
0.2
A
µs
K/W
V
CE
= 900 V; V
GE
= ±10 V;
R
G
= 3.9
W;
non-repetitive
(per IGBT)
Output Inverter D1 - D4
Ratings
Symbol
V
RRM
I
F25
I
F80
V
F
I
rr
t
rr
Q
rr
E
rec
R
thJC
Definitions
max. repetitve reverse voltage
forward current
forward voltage
(on chip level)
max. reverse recovery current
reverse recovery time
Conditions
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80°C
I
F
= 100 A; V
GE
= 0 V
inductive load
V
CE
= 600 V; I
C
= 100 A
V
GE
= ±15 V; R
G
= 10
W
L
S
= 70 nH
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
1200
135
90
Unit
V
A
A
V
V
A
ns
µC
mJ
2.00
1.95
120
330
12.5
4.2
2.20
2.25
T
VJ
= 125°C
thermal resistance junction to case
0.4
T
C
= 25°C unless otherwise stated
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
20110615a
© 2011 IXYS All rights reserved
2-8
MIEB 101H1200EH
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
CTI
M
d
R
pin to chip
d
S
d
A
R
thCH
Weight
V
CE
= V
CE(sat)
+ 2x R
pin to chip
·
I
C
Curves are measured on modul level except Fig. 14 to Fig. 17
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
see
creep distance on surface
strike distance through air
thermal resistance case to heatsink
Conditions
min.
-40
-40
Ratings
typ. max.
125
150
125
3000
3600
200
Unit
°C
°C
°C
V~
V~
Nm
mW
mm
mm
I
ISOL
< 1 mA; 50/60 Hz
t = 1 min
t=1s
3
1.8
12.7
9.6
6
with heatsink compound
0.1
300
T
C
= 25°C unless otherwise stated
K/W
g
IXYS reserves the right to change limits, test conditions and dimensions.
20110615a
© 2011 IXYS All rights reserved
3-8
MIEB 101H1200EH
Circuit Diagram
13, 21
D1
9
10
19
15
D3
3
4
14, 20
T3
11
12
T4
D4
T2
D2
2D Data Matrix
FOSS-ID 6 digits
T1
1
2
XXX XX-XXXXX
YYCWx
Logo
Part name
Date Code
Prod.Index
Part number
M
I
E
B
101
H
1200
EH
= Module
= IGBT
= SPT
= 2nd Generation
= Current Rating [A]
= H~ Bridge
= Reverse Voltage [V]
= E3-Pack
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Remark:
Dimensions without tolerances acc. DIN ISO 2768-T1-m
Product Marking
Ordering
Standard
Part Name
MIEB101H1200EH
Marking on Product
MIEB101H1200EH
Delivering Mode Base Qty Ordering Code
Box
5
510534
20110615a
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
4-8
MIEB 101H1200EH
Transistor T1 - T4
300
V
GE
= 15 V
300
250
200
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
V
GE
= 15 V
17 V
19 V
250
200
13 V
I
C
[A]
150
100
50
0
I
C
150
[A]
100
50
0
11 V
9V
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
[V]
Fig. 1 Typ. output characteristics
250
20
V
CE
[V]
Fig. 2 Typ. output characteristics
200
I
C
= 100 A
V
CE
= 600 V
15
I
C
150
V
GE
[V]
T
VJ
= 125°C
T
VJ
= 25°C
10
[A]
100
50
5
0
5
6
7
8
9
10
11
12
13
0
0
200
400
600
800
1000
V
GE
[V]
Fig. 3 Typ. transfer characteristics
30
25
20
Q
G
[nC]
Fig. 4 Typ. turn-on gate charge
t
d(on)
150
125
100
24
20
16
600
500
t
d(off)
E
[mJ]
15
10
5
0
R
G
= 10
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
400
t
r
75
50
t
[ns]
E
[mJ]
t
12
8
4
0
300
[ns]
R
G
= 10
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
40
60
E
rec(off)
E
on
0
20
40
60
80 100 120 140 160 180 200
t
f
200
100
0
25
0
E
off
0
20
80 100 120 140 160 180 200
I
C
[A]
Fig. 5 Typ. turn-on energy & switching times
versus collector current
IXYS reserves the right to change limits, test conditions and dimensions.
I
C
[A]
Fig. 6 Typ. turn-off energy & switching times
versus collector current
20110615a
© 2011 IXYS All rights reserved
5-8
嵌入式系统
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