BIPOLAR ANALOG INTEGRATED CIRCUIT
PC8240T6N
SiGe:C LOW NOISE AMPLIFIER FOR GPS
DESCRIPTION
The
PC8240T6N is a silicon germanium carbon (SiGe:C) monolithic integrated circuit low noise amplifier for
The
PC8240T6N contains the output matching circuit to reduce external components and system size.
This IC is manufactured using our UHS4 (Ultra High Speed Process) SiGe:C bipolar process.
GPS. This device exhibits low noise figure and high gain characteristics, to improve the sensitivity of GPS receivers.
The package is a 6-pin plastic TSON (Thin Small Out-line Non-leaded) (T6N) suitable for surface mounting.
FEATURES
• Supply Voltage
• Low Noise Figure
• High Gain
• Low current consumption
• Built-in power-saving function
• High-density surface mounting
• Included output matching circuit
• Included very robust bandgap regulator (Small V
CC
and T
A
dependence)
• Included protection circuits for ESD
• Low noise amplifier for GPS
ORDERING INFORMATION
Part Number
CO
Order Number
APPLICATION
PC8240T6N-E2
PC8240T6N-E2-A
DI
S
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order:
PC8240T6N-A
Caution
:
Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10735EJ01V0DS (1st edition)
Date Published October 2008 NS
NT
IN
U
: V
CC
= 1.6 to 3.3 V (2.7 V TYP.)
: NF = 1.0 dB TYP. @ V
CC
= 2.7 V, f
in
= 1 575 MHz
: NF = 1.0 dB TYP. @ V
CC
= 1.8 V, f
in
= 1 575 MHz
: G
P
= 27 dB TYP. @ V
CC
= 1.8 V, f
in
= 1 575 MHz
: I
CC
= 6.5 mA TYP. @ V
CC
= 2.7 V
: V
PSon
= 1.0 V to V
CC
, V
PSoff
= 0 to 0.4 V
: G
P
= 28 dB TYP. @ V
CC
= 2.7 V, f
in
= 1 575 MHz
: 6-pin plastic TSON (T6N) package (1.5
1.5
0.37 mm)
Package
Marking
C3T
Supplying Form
8 mm wide embossed taping
Pin 1, 6 face the perforation side of the tape
Qty 3 kpcs/reel
6-pin plastic TSON
(T6N) (Pb-Free)
ED
PC8240T6N
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No.
1
2
3
4
5
6
Pin Name
V
CC
GND
INPUT
Parameter
Supply Voltage
Power-Saving Voltage
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
Input Power
NT
IN
U
Symbol
V
CC
V
PS
P
tot
T
A
Test Conditions
Ratings
4.0
4.0
T
A
= +25C
T
A
= +25C
150
T
stg
P
in
+10
Symbol
V
CC
T
A
MIN.
1.6
TYP.
2.7
MAX.
3.3
Unit
V
40
1.0
0
+25
+85
V
CC
0.4
C
V
V
V
PSon
V
PSoff
Symbol
I
CC
Test Conditions
MIN.
4.5
24.5
6.5
10
TYP.
6.5
28
1.0
8.5
17
No Signal (V
PS
= 2.7 V)
At Power-Saving Mode (V
PS
= 0 V)
G
P
NF
RL
in
RL
out
P
in
=
35
dBm
Data Sheet PU10735EJ01V0DS
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
Operating Ambient Temperature
Power Save Turn-on Voltage
Power Save Turn-off Voltage
ELECTRICAL CHARACTERISTICS
(T
A
= +25C, V
CC
= V
PS
= 2.7 V, f
in
= 1 575 MHz, unless otherwise specified)
Parameter
MAX.
9.0
1
31
1.3
Unit
mA
DI
S
Circuit Current
CO
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
2
ED
Power Save
OUTPUT
V
CC
Remark
Exposed pad : GND
Unit
V
V
mW
C
C
dBm
40
to +85
55
to +150
A
dB
dB
dB
dB
PC8240T6N
STANDARD CHARACTERISTICS FOR REFERENCE 1
(T
A
= +25C, V
CC
= V
PS
= 2.7 V, f
in
= 1 575 MHz, unless otherwise specified)
Parameter
Input 3rd Order Intercept Point
Isolation
Gain 1 dB Compression Input Power
Symbol
IIP
3
ISL
P
in (1 dB)
Test Conditions
f
in
1 = 1 575 MHz, f
in
2 = 1 574 MHz
Reference
21.5
55
22.5
Unit
dBm
dB
dBm
STANDARD CHARACTERISTICS FOR REFERENCE 2
(T
A
= +25C, V
CC
= V
PS
= 1.8 V, f
in
= 1 575 MHz, unless otherwise specified)
Parameter
Circuit Current
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
Input 3rd Order Intercept Point
Isolation
Symbol
I
CC
Test Conditions
No Signal (V
PS
= 1.8 V)
P
in
=
35
dBm
NT
IN
U
G
P
27
NF
1.0
8.5
RL
in
RL
out
IIP
3
ISL
16.5
f
in
1 = 1 575 MHz, f
in
2 = 1 574 MHz
21.5
55
P
in (1 dB)
26.5
Data Sheet PU10735EJ01V0DS
Gain 1 dB Compression Input Power
TEST CIRCUIT
DI
S
CO
ED
Reference
6.2
Unit
mA
dB
dB
dB
dB
dBm
dB
dBm
3
PC8240T6N
TYPICAL CHARACTERISTICS (T
A
= +25C, unless otherwise specified)
DI
S
Remark
The graphs indicate nominal characteristics.
4
CO
Data Sheet PU10735EJ01V0DS
NT
IN
U
ED
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