FW707
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
-1mA,
VGS=0V
ID=-
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
-10V,
ID=-
-1mA
VDS=-
-10V,
ID=-
-8A
VDS=-
-8A,
VGS=-
-10V
ID=-
-4A,
VGS=-
-4.5V
ID=-
-4A,
VGS=-
-4V
ID=-
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--8A
VDS=--15V, VGS=--10V, ID=--8A
VDS=--15V, VGS=--10V, ID=--8A
IS=--8A, VGS=0V
Ratings
min
--30
-
-1
±10
--1.2
10
20
32
36
900
240
160
8.7
73
84
74
18
2.1
4.7
-
-0.82
-
-1.2
26
45
51
--2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
VDD= --15V
ID= --8A
RL=1.87Ω
D
VOUT
0
--10V
VIN
PW=10μs
D.C.≤1%
G
FW707
P.G
50Ω
S
--8
ID -- VDS
--4.5
V
--16
--14
ID -- VGS
VDS= --10V
--7
--6
--5
--4
--3
--2
--10V
--5.0.V
V
--3
.5V
--4.0
--3.0V
Drain Current, ID -- A
Drain Current, ID -- A
--12
--10
--8
--6
--4
--2
0
--1
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
--0.5
--1.0
--1.5
--2.0
Ta=
7
VGS= --2.5V
--2.5
25
°
C
--25
°
C
--3.0
--3.5
5
°
C
--4.0
Drain-to-Source Voltage, VDS -- V
IT15805
Gate-to-Source Voltage, VGS -- V
IT15806
No.1805-2/4
FW707
80
RDS(on) -- VGS
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
70
60
50
40
30
20
10
0
--60 --40
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
70
60
50
40
30
20
10
0
ID= --4A
--8A
--4A
I D=
,
4.0V
= --
A
= --4
VGS
, ID
.5V
= --4
VGS
--8A
,I =
--10V D
V GS=
0
--2
--4
--6
--8
--10
--12
--14
--16
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
3
|
y
fs
|
-- ID
IT15807
3
2
--10
7
5
3
2
--1.0
7
5
3
2
Ambient Temperature, Ta --
°
C
IS -- VSD
IT15808
Forward Transfer Admittance,
|
y
fs
|
-- S
2
10
VDS= --10V
VGS=0V
3
2
1.0
7
5
3
2
0.1
--0.01
Ta
5
°
C
--2
=
°
C
75
C
25
°
Source Current, IS -- A
7
5
3
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT15809
--0.01
--0.2
--0.4
Ta=7
5
°
--0.6
--25
°
C
--0.8
25
°
C
--0.1
7
5
C
--1.0
--1.2
IT15810
Drain Current, ID -- A
3
2
SW Time -- ID
3
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
VDD= --15V
VGS= --10V
Ciss, Coss, Crss -- pF
td(off)
tf
f=1MHz
2
Switching Time, SW Time -- ns
100
7
5
3
2
1000
7
5
3
2
Ciss
Coss
Crss
tr
10
7
2
--0.1
2
3
5
7
--1.0
2
3
5
7
--10
td(on)
100
5
0
--5
--10
--15
--20
--25
--30
IT15812
Drain Current, ID -- A
--10
--9
VGS -- Qg
IT15811
--100
7
5
3
2
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --15V
ID= --8A
IDP= --52A (PW≤10μs)
--8
--7
--6
--5
--4
--3
--2
--1
0
0
2
4
6
8
10
12
14
16
18
20
Drain Current, ID -- A
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ID= --8A
10
0
μ
s
1m
s
10
m
10
s
0m
s
DC
10
op
era
s
n
tio
Operation in this area
is limited by RDS(on).
--0.01
--0.01 2 3
Ta=25°C
Single pulse
When mounted on ceramic substrate (2000mm
2
×0.8mm)
1unit
5 7--0.1
2 3
5 7--1.0
2 3
5 7 --10
2 3
5
Total Gate Charge, Qg -- nC
IT15813
Drain-to-Source Voltage, VDS -- V
IT15814
No.1805-3/4
FW707
When mounted on ceramic substrate
(2000mm
2
×0.8mm),
PW≤10s
Allowable Power Dissipation(FET1), PD -- W
3.0
PD -- Ta
Allowable Power Dissipation, PD -- W
2.4
2.3
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
PD (FET1) -- PD (FET2)
When mounted on ceramic substrate
(2000mm
2
×0.8mm),
PW≤10s
2.5
2.3
2.0
To
t
1.5
al
di
1u
nit
ss
ip
ati
on
1.0
0.5
0
0
20
40
60
80
100
120
140
160
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Ambient Temperature, Ta --
°C
IT15803
Allowable Power Dissipation(FET2), PD -- W
IT15804
Note on usage : Since the FW707 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
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This catalog provides information as of July, 2010. Specifications and information herein are subject
to change without notice.
PS No.1805-4/4
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