N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET
| P6NC60 | STP6NC60FP | STP6NC60 | STB6NC60-1 | STB6NC60 | |
|---|---|---|---|---|---|
| 描述 | N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET | N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET | N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET | N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET | N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET |
| 是否Rohs认证 | - | 符合 | 符合 | 符合 | - |
| 零件包装代码 | - | TO-220AB | TO-220AB | TO-262AA | - |
| 包装说明 | - | TO-220FP, 3 PIN | TO-220, 3 PIN | I2PAK-3 | - |
| 针数 | - | 3 | 3 | 3 | - |
| Reach Compliance Code | - | compli | _compli | compli | - |
| 雪崩能效等级（Eas） | - | 320 mJ | 320 mJ | 320 mJ | - |
| 配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - |
| 最小漏源击穿电压 | - | 600 V | 600 V | 600 V | - |
| 最大漏极电流 (Abs) (ID) | - | 6 A | 6 A | 6 A | - |
| 最大漏极电流 (ID) | - | 6 A | 6 A | 6 A | - |
| 最大漏源导通电阻 | - | 1.2 Ω | 1.2 Ω | 1.2 Ω | - |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| JEDEC-95代码 | - | TO-220AB | TO-220AB | TO-262AA | - |
| JESD-30 代码 | - | R-PSFM-T3 | R-PSFM-T3 | R-PSIP-T3 | - |
| JESD-609代码 | - | e3 | e3 | e3 | - |
| 元件数量 | - | 1 | 1 | 1 | - |
| 端子数量 | - | 3 | 3 | 3 | - |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| 最高工作温度 | - | 150 °C | 150 °C | 150 °C | - |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| 封装形状 | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| 封装形式 | - | FLANGE MOUNT | FLANGE MOUNT | IN-LINE | - |
| 峰值回流温度（摄氏度） | - | NOT SPECIFIED | NOT SPECIFIED | 245 | - |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
| 最大功率耗散 (Abs) | - | 40 W | 125 W | 125 W | - |
| 最大脉冲漏极电流 (IDM) | - | 24 A | 24 A | 24 A | - |
| 认证状态 | - | Not Qualified | Not Qualified | Not Qualified | - |
| 表面贴装 | - | NO | NO | NO | - |
| 端子面层 | - | TIN | Tin (Sn) | TIN | - |
| 端子形式 | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - |
| 端子位置 | - | SINGLE | SINGLE | SINGLE | - |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| 晶体管应用 | - | SWITCHING | SWITCHING | SWITCHING | - |
| 晶体管元件材料 | - | SILICON | SILICON | SILICON | - |
| Base Number Matches | - | 1 | 1 | 1 | - |
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