RADIATION HARDENED POWER MOSFET
参数名称 | 属性值 |
是否无铅 | 含铅 |
包装说明 | CHIP CARRIER, R-CBCC-N3 |
针数 | 3 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
雪崩能效等级(Eas) | 500 mJ |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 30 V |
最大漏极电流 (ID) | 75 A |
最大漏源导通电阻 | 0.0035 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-CBCC-N3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR |
封装形式 | CHIP CARRIER |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 300 A |
认证状态 | Not Qualified |
参考标准 | MIL-19500/683 |
表面贴装 | YES |
端子形式 | NO LEAD |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
JANSF2N7467U2 | IRHNA53Z60 | IRHNA58Z60 | IRHNA54Z60 | IRHNA57Z60 | JANSR2N7467U2 | JANSH2N7467U2 | JANSG2N7467U2 | |
---|---|---|---|---|---|---|---|---|
描述 | RADIATION HARDENED POWER MOSFET | RADIATION HARDENED POWER MOSFET | RADIATION HARDENED POWER MOSFET | RADIATION HARDENED POWER MOSFET | RADIATION HARDENED POWER MOSFET | RADIATION HARDENED POWER MOSFET | RADIATION HARDENED POWER MOSFET | RADIATION HARDENED POWER MOSFET |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
包装说明 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 |
Reach Compliance Code | unknow | unknow | unknow | compli | unknow | compli | compli | compli |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
雪崩能效等级(Eas) | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
最大漏极电流 (ID) | 75 A | 75 A | 75 A | 75 A | 75 A | 75 A | 75 A | 75 A |
最大漏源导通电阻 | 0.0035 Ω | 0.0035 Ω | 0.0035 Ω | 0.0035 Ω | 0.0035 Ω | 0.0035 Ω | 0.0035 Ω | 0.0035 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 300 A | 300 A | 300 A | 300 A | 300 A | 300 A | 300 A | 300 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
针数 | 3 | 3 | 3 | 3 | 3 | - | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | - | - |
厂商名称 | - | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
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