X7R Dielectric
C0G (NP0) Dielectric
Specifications and Test Methods
Capacitance
Parameter/Test
Operating Temperature Range
Capacitance
Dissipation Factor
Operating Temperature Range
Specifications and Test Methods
Limits
Parameter/Test
X7R Specification
-55ºC to +125ºC
Within specified tolerance
NP0 Specification Limits
-55ºC to +125ºC
≤ 10% for ≥ 50V DC rating≤ 12.5% for 25V DC rating
Within specified tolerance
≤ 12.5% for 25V and 16V DC rating
<30 pF: Q≥ 400+20 x Cap Value
≤ 12.5% for ≤ 10V DC rating
≥30 pF: Q≥ 1000
100,000MΩ or 1000MΩ - µF,
100,000MΩ or 1000MΩ - µF,
whichever is
is less
whichever
less
No breakdown or visual defects
Measuring Conditions
Temperature Cycle Chamber
Q
Insulation Resistance
Dielectric Strength
Dielectric Strength
Insulation Resistance
No breakdown or visual defects
Resistance to
Resistance to
Flexure
Flexure
Stresses
Capacitance
Capacitance
Variation
Variation
Dissipation
Q
Factor
Appearance
Appearance
No defects
No defects
≤
±5% or ±.5 pF,
±12%
whichever is greater
Meets Initial Values (As Above)
Meets Initial Values (As Above)
≥
≥ Initial Value
0.3
Initial Value x
x 0.3
Measuring Conditions
Freq.: 1.0
Temperature
kHz ± 10%
Cycle Chamber
Voltage: 1.0Vrms ± .2V
Freq.: 1.0 MHz ± 10% for cap ≤ 1000 pF
For Cap > 10µF, 05Vrm @ 120Hz
1.0 kHz ± 10% for cap > 1000 pF
Voltage: 1.0Vrms ± .2V
Charge device with rated voltage for
for
Charge device with rated voltage
120 ± 5 secs @ room temp/humidity
60 ± 5 secs @ room temp/humidity
Charge device with 250% of
of rated voltage for
Charge device with 250%
rated voltage for
1-5 seconds, w/charge and discharge current
1-5 seconds, w/charge and discharge current
limited to
to 50 mA (max)
limited
50 mA (max)
Note: Charge device with 150% of rated
Note: Charge device with 150% of rated
voltage for 500V devices.
voltage for 500V devices.
Deflection: 2mm
Deflection: 2mm
Test Time: 30 seconds
Test Time: 30 seconds
Stresses
Insulation
Insulation
Resistance
Resistance
Appearance
Appearance
Solderability
Solderability
Capacitance
Capacitance
Variation
Variation
Resistance to
Resistance to
Solder Heat
Solder Heat
Dissipation
Q
Factor
No defects, <25% leaching
either end terminal
No defects, <25% leaching of
of either end terminal
≤ ±2.5% or ±.25
±7.5%
≤
pF, whichever is greater
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Meets Initial Values (As Above)
≤ ±2.5% or ±.25 pF, whichever is greater
≤ ±7.5%
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Meets Initial Values (As Above)
No visual defects
≤ ±12.5%
No visual defects
≥ 95% of each terminal should
covered
≥ 95% of each terminal should be
be covered
with fresh solder
with fresh solder
Dip device
eutectic solder at 230 ±
± 5ºC
Dip device in
in eutectic solder at 230
5ºC
for 5.0
0.5 seconds
for 5.0 ±
± 0.5 seconds
Dip device in eutectic solder
solder at
for 60seconds.
Dip device in eutectic
at 260ºC
260ºC for 60
seconds. Store at room temperature for 24 ±
Store at room temperature for 24 ± 2hours before
2
hours
measuring electrical
electrical properties.
before measuring
properties.
Insulation
Resistance
Resistance
Insulation
Dielectric
Appearance
Capacitance
Capacitance
Variation
Appearance
Variation
Dielectric
Strength
Strength
No visual defects
Step 1: -55ºC ± 2º
Step 2: Room Temp
Step 1: -55ºC ± 2º
30 ± 3 minutes
≤ 3 minutes
≤ 3 minutes
30 ± 3 minutes
Step 2: Room Temp
Step 3: +125ºC ± 2º
Thermal
Thermal
Shock
Shock
Insulation
Resistance
Resistance
Dielectric
Q
Dissipation
Factor
Insulation
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Step 3: +125ºC ± 2º
Step 4: Room Temp
Step 4: Room Temp
30 ± 3 minutes
≤ 3 minutes
≤ 3 minutes
30 ± 3 minutes
Load Life
Load Life
Q
Dissipation
Cap)
(C=Nominal
Insulation
Insulation
Resistance
Resistance
Appearance
Dielectric
Strength
Strength
Factor
Variation
Capacitance
Variation
Appearance
Capacitance
Dielectric
Strength
Strength
Appearance
Meets Initial Values (As Above)
No visual defects
Repeat for 5 cycles and measure after
Repeat for 5 cycles and measure after
24 hours at room temperature
24 ± 2 hours at room temperature
≤ ±3.0% or ± .3 pF, whichever is greater
≥ 30 pF:
Q≥ 350
≥10 pF, <30 pF:
Q≥ 275 +5C/2
≤ Initial Value x 2.0 (See Above)
<10 pF:
Q≥ 200 +10C
≥ Initial Value x
x 0.3 (See Above)
≥ Initial Value
0.3 (See Above)
Charge device with 1.5 rated voltage (≤ 10V) in
Charge
set at
with twice rated voltage in
test chamber
device
125ºC ± 2ºC for 1000 hours
test chamber set at 125ºC ± 2ºC
(+48, -0)
If RV > 10V then Life Test voltage will be 2xRV
but there are exceptions (please
and stabilize
for
Remove from test chamber
contact AVX
at
further
temperature for 24 hours
room
details on exceptions)
for 1000 hours (+48, -0).
Dielectric
Meets Initial Values (As Above)
Meets Initial Values (As Above)
≤ ±5.0% or ± .5 pF, whichever is greater
≥ 30 pF:
Q≥ 350
≥10 pF,
Initial Value x 2.0 (See
+5C/2
<30 pF:
Q≥ 275
Above)
≤
<10 pF:
Q≥ 200 +10C
≥ Initial Value x
x 0.3 (See Above)
≥ Initial Value
0.3 (See Above)
Meets Initial Values (As Above)
Meets Initial Values (As Above)
≤ ±12.5%
No visual defects
Load
Load
Humidity
Humidity
Variation
Capacitance
Variation
Q
Dissipation
Factor
Appearance
Capacitance
No visual defects
before measuring.
Remove from test chamber and stabilize at room
temperature for 24 ± 2 hours before measuring.
Store in a test chamber set at 85ºC ± 2ºC/
Store in a test chamber set at 85ºC ± 2ºC/
85% ± 5% relative humidity for 1000 hours
85% ± 5%
with rated voltage
for 1000 hours
(+48, -0)
relative humidity
applied.
(+48, -0) with rated voltage applied.
Insulation
Insulation
Resistance
Resistance
Dielectric
Dielectric
Strength
Strength
Remove from chamber and stabilize at room
Remove from chamber and stabilize at
temperature and humidity for
room temperature for 24 ± 2 hours
24 ± 2 hours before measuring.
before measuring.
20
100917
042718
5
NXP MCU
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