Data Sheet No. PD 96942A
IRIS-F6456S
Features
•
Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
•
Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
•
Low start-up circuit current (100uA max)
•
Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
•
Avalanche energy guaranteed MOSFET with high VDSS
•
The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
•
No VDSS de-rating is required.
•
Built-in constant voltage drive circuit
•
Built-in soft drive circuit
•
Built-in low frequency PRC mode (≒20kHz)
•
Various kinds of protection functions
•
Pulse-by-pulse Overcurrent Protection (OCP)
•
Overvoltage Protection with latch mode (OVP)
•
Thermal Shutdown with latch mode (TSD)
IRIS-F6456S
650
0.71Ω
INTEGRATED SWITCHER
Package Outline
TO-247 Fullpack (5 Lead)
Key Specifications
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
AC input(V)
230±15%
85 to 264
Pout(W)
Note 1
300
150
Descriptions
Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant
Operation, and the peak power output is obtained by approximately 120
to 140% of the above listed. When the output voltage is low and ON-
duty is narrow, the Pout (W) shall become lower than that of above.
IRIS-F6456S is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant (including
low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes
high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count
and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed
OFF-time).
Typical Connection Diagram
IRIS-F6400
GND
Vin
D
S
OCP/FB
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IRIS-F6456S
Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
I
Dpeak
I
DMAX
E
AS
Vin
Vth
P
D1
P
D2
T
F
Top
Tstg
Tch
Definition
Drain Current
*1
Maximum switching current *5
Single pulse avalanche energy *2
Input voltage for control part
O.C.P/F.B Pin voltage
Power dissipation for MOSFET *3
Power dissipation for control part
(Control IC) *4
Internal frame temperature
in operation
Operating ambient temperature
Storage temperature
Channel temperature
Terminals Max. Ratings
3-2
16
3-2
3-2
4-5
1-5
3-2
4-5
-
-
-
-
16
521
35
6
58
2.8
0.49
-20 ~ +125
-20 ~ +125
-40 ~ +125
150
Units
A
A
mJ
V
V
W
W
W
℃
℃
℃
℃
Note
Single Pulse
V
2-5
=0.78V
Ta=-20~+125℃
Single Pulse
I
L peak
=6.4A
With infintite heatsink
Without heatsink
Specified by
Vin×Iin
Refer to recommended
operating temperature
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 5 due to patterning, the maximum switching current decreases as shown by V
2-5
in Fig.1
Accordingly please use this device within the decrease value, referring to the derating curve of the
maximum switching current.
Fig.1
V
2-5
Recommended operating conditions
Time for input of quasi resonant signals
For the quasi resonant signal inputted to O.C.P/F.B Pin
at the time of quasi resonant operation, the signal shall
be wider than T
th(2).
Tth(2)≧1.0μsec
Ｖ
O.C.P/F.B
0V
Vth(2)
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IRIS-F6456S
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=18V,unless otherwise specified)
Symbol
V
in(ON)
V
in(OFF)
I
in(ON)
I
in(OFF)
T
OFF(MAX)
Tth(2)
T
OFF(MIN)
Vth(1)
Vth(2)
I
OCP/FB
V
in(OVP)
I
in(H)
V
in(La.OFF)
Tj
(TSD)
Definition
Operation start voltage
Operation stop voltage
Circuit current in operation
Circuit current in non-operation
Maximum OFF time
Minimum time for input of quasi
resonant signals
*6
Minimum OFF time
*7
O.C.P/F.B Pin threshold voltage 1
O.C.P/F.B Pin threshold voltage 2
O.C.P/F.B Pin extraction current
O.V.P operation voltage
Latch circuit sustaining current *8
Latch circuit release voltage *8
Thermal shutdown operating temperature
MIN
14.4
9
-
-
45
-
-
0.68
1.3
1.2
20.5
-
6.6
140
Ratings
TYP
16
10
-
-
-
-
-
0.73
1.45
1.35
22.5
-
-
-
MAX
17.6
11
20
100
55
1
2
0.78
1.6
1.5
24.5
400
8.4
-
Units
V
V
mA
µA
µsec
µsec
µsec
V
V
mA
V
µA
V
℃
Test
Conditions
Vin=0→17.6V
Vin=17.6
→
9V
-
Vin=14V
-
-
-
-
-
Vin=0→24.5V
Vin=24.5
→8.5V
Vin=24.5
→6.6V
*6 Refer to Recommended operating conditions (See page 2)
*7 The minimum OFF time means T
OFF
width at the time when the minimum quasi resonant signal is inputted.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25℃) unless otherwise specified
Symbol
V
DSS
I
DSS
Definition
Drain-to-Source breakdown voltage
Drain leakage current
MIN
650
-
-
-
-
Ratings
TYP
-
-
-
-
-
MAX
-
300
0.71
250
0.85
Units
V
µA
Ω
nsec
℃
/W
Test Conditions
ID=300µA
V5
- 2
=0V(short)
V
DS
=650V
V5-2=0V(short)
V5-2=10V
I
D
=3.2A
R
DS(ON)
On-resistance
tf
Switching time
θ
ch-F
Thermal resistance
-
Between channel and
internal frame
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IRIS-F6456S
IRIS-F6456S
A.S.O. temperature derating coefficient curve
IRIS-F6456S
MOSFET
A.S.O. Curve
100
Drain current
limit by ON
resistance
Ta=25ºC
Single Pulse
100
0.1ms
A.S.O. temperature derating coefficient[%]
80
D
Drain Current I
D
[A]
10
1ms
60
1
40
20
0.1
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
0
0
20
40
60
80
100
120
0.01
1
10
100
1000
Drain-to-Source Voltage V
DS
[V]
Internal frame temperature TF [℃]
IRIS-F6456S
18.0
16.0
Maximum Switchng Current I
DMAX
[A]
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0
E
AS
temperature derating coefficient [%]
80
Maximum Switching current derating curve
Ta=‐
20½+125℃
IR IS-F6456S
A valanche energy derating curve
100
60
40
20
0.0
0.70
25
50
75
100
125
150
0.80
0.90
1.00
V
2-5
[V]
1.10
1.20
C hannel temperature T ch [℃ ]
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IRIS-F6456S
IRIS-F6456S
MOSFET Ta-P
D1
Curve
70
P
D1
=58[W]
0.5
0.6
IRIS-F6456S
MIC T
F
-P
D2
Curve
60
P
D2
=0.49[W]
Power dissipation P
D1
[W]
Power dissipation P
D2
[W]
50
With infinite
heatsink
0.4
40
0.3
30
0.2
20
Without
heatsink
P
D1
=2.8[W]
0.1
10
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta[℃]
0
0
20
40
60
80
100
120
140
160
Internal frame temperature T
F
[℃]
IRIS-F6456S
Transient thermal resistance curve
10
Transient thermal resistance
θch-c[℃/W]
1
0.1
0.01
0.001
1µ
10µ
100µ
ti e
t [sec]
m
1m
10m
100m
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