UVPROM, 512KX8, 250ns, CMOS, CDIP32, WINDOWED, CERAMIC, DIP-32
| 参数名称 | 属性值 |
| 厂商名称 | AMD(超微) |
| 零件包装代码 | DIP |
| 包装说明 | WDIP, DIP32,.6 |
| 针数 | 32 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 最长访问时间 | 250 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-GDIP-T32 |
| JESD-609代码 | e0 |
| 长度 | 42.1005 mm |
| 内存密度 | 4194304 bit |
| 内存集成电路类型 | UVPROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 32 |
| 字数 | 524288 words |
| 字数代码 | 512000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 512KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | WDIP |
| 封装等效代码 | DIP32,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE, WINDOW |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 5.588 mm |
| 最大待机电流 | 0.0001 A |
| 最大压摆率 | 0.06 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 15.24 mm |
| Base Number Matches | 1 |
| 5962-9175201MXA | 5962-9175204MXA | 5962-9175202MXA | 5962-9175204MYA | 5962-9175202MYA | 5962-9175201MYA | |
|---|---|---|---|---|---|---|
| 描述 | UVPROM, 512KX8, 250ns, CMOS, CDIP32, WINDOWED, CERAMIC, DIP-32 | UVPROM, 512KX8, 150ns, CMOS, CDIP32, WINDOWED, CERAMIC, DIP-32 | UVPROM, 512KX8, 200ns, CMOS, CDIP32, WINDOWED, CERAMIC, DIP-32 | UVPROM, 512KX8, 150ns, CMOS, CQCC32, WINDOWED, CERAMIC, LCC-32 | UVPROM, 512KX8, 200ns, CMOS, CQCC32, WINDOWED, CERAMIC, LCC-32 | UVPROM, 512KX8, 250ns, CMOS, CQCC32, WINDOWED, CERAMIC, LCC-32 |
| 零件包装代码 | DIP | DIP | DIP | QFJ | QFJ | QFJ |
| 包装说明 | WDIP, DIP32,.6 | WDIP, DIP32,.6 | WDIP, DIP32,.6 | WQCCN, LCC32,.45X.55 | WQCCN, LCC32,.45X.55 | WQCCN, LCC32,.45X.55 |
| 针数 | 32 | 32 | 32 | 32 | 32 | 32 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 250 ns | 150 ns | 200 ns | 150 ns | 200 ns | 250 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-GDIP-T32 | R-GDIP-T32 | R-GDIP-T32 | R-CQCC-N32 | R-CQCC-N32 | R-CQCC-N32 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 42.1005 mm | 42.1005 mm | 42.1005 mm | 13.97 mm | 13.97 mm | 13.97 mm |
| 内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit |
| 内存集成电路类型 | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
| 字数代码 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | WDIP | WDIP | WDIP | WQCCN | WQCCN | WQCCN |
| 封装等效代码 | DIP32,.6 | DIP32,.6 | DIP32,.6 | LCC32,.45X.55 | LCC32,.45X.55 | LCC32,.45X.55 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | CHIP CARRIER, WINDOW | CHIP CARRIER, WINDOW | CHIP CARRIER, WINDOW |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 |
| 座面最大高度 | 5.588 mm | 5.588 mm | 5.588 mm | 3.556 mm | 3.556 mm | 3.556 mm |
| 最大待机电流 | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A |
| 最大压摆率 | 0.06 mA | 0.06 mA | 0.06 mA | 0.06 mA | 0.06 mA | 0.06 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | TIN LEAD | Tin/Lead (Sn/Pb) - hot dipped | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | QUAD | QUAD | QUAD |
| 宽度 | 15.24 mm | 15.24 mm | 15.24 mm | 11.43 mm | 11.43 mm | 11.43 mm |
| 厂商名称 | AMD(超微) | - | AMD(超微) | AMD(超微) | AMD(超微) | AMD(超微) |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - |
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