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SEN02G64C4BH2MT-25WR

产品描述DDR DRAM Module, 256MX64, 0.4ns, CMOS, ROHS COMPLIANT, DIMM-200
产品类别存储    存储   
文件大小266KB,共14页
制造商Swissbit
标准
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SEN02G64C4BH2MT-25WR概述

DDR DRAM Module, 256MX64, 0.4ns, CMOS, ROHS COMPLIANT, DIMM-200

SEN02G64C4BH2MT-25WR规格参数

参数名称属性值
是否Rohs认证符合
Objectid8075330842
包装说明DIMM,
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式DUAL BANK PAGE BURST
最长访问时间0.4 ns
其他特性AUTO/SELF REFRESH
JESD-30 代码R-XDMA-N200
长度67.6 mm
内存密度17179869184 bit
内存集成电路类型DDR DRAM MODULE
内存宽度64
功能数量1
端口数量1
端子数量200
字数268435456 words
字数代码256000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织256MX64
封装主体材料UNSPECIFIED
封装代码DIMM
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度)NOT SPECIFIED
座面最大高度30.15 mm
自我刷新YES
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装NO
技术CMOS
温度等级INDUSTRIAL
端子形式NO LEAD
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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Data Sheet
Rev.1.4
24.11.2010
2GB DDR2
– SDRAM SO-DIMM
Features:
200 Pin SO-DIMM
SEN02G64C4BH2MT-25R
2GB PC2-6400 in FBGA Technology
RoHS compliant
Options:
Data Rate / Latency
DDR2 800 MHz CL6
DDR2 667 MHz CL5
DDR2 533 MHz CL4
Module Density
2048MB with 16 dies and 2 ranks
Standard Grade
Grade E
Grade W
(T
A
)
(T
C
)
(T
A
)
(T
C
)
(T
A
)
(T
C
)
0°C to 70°C
0°C to 85°C
0°C to 85°C
0°C to 95°C
-40°C to 85°C
-40°C to 95°C
Marking
-25
-30
-37
200-pin 64-bit Small Outline, Dual-In-Line Double
Data Rate Synchronous DRAM Module
Module organization: dual rank 256M x 64
VDD = 1.8V ±0.1V, V
DDQ
1.8V ±0.1V
1.8V I/O ( SSTL_18 compatible)
Auto Refresh (CBR) and Self Refresh 8k Refresh
every 64ms
Serial Presence Detect with EEPROM
Gold-contact pad
This module is fully pin and functional compatible to
the JEDEC PC2-6400 spec. and JEDEC- Standard
MO-224. (see
www.jedec.org)
The pcb and all components are manufactured
according to the RoHS compliance specification
[EU Directive 2002/95/EC Restriction of Hazardous
Substances (RoHS)]
DDR2 - SDRAM component MICRON
MT47H128M8CF-25 DIE-Revision H
128Mx8 DDR2 SDRAM in FBGA-60 package
Four bit prefetch architecture
DLL to align DQ and DQS transitions with CK
Eight internal device banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency – 1 t
CK
Programmable burst length: 4 or 8
Adjustable data-output drive strength
On-die termination (ODT)
* The refresh rate has to be doubled when 85°C>T
C
>95°C
Environmental Requirements:
Operating temperature (ambient
)
Standard Grade
0°C to 70°C
Grade E
0°C to 85°C
Grade W
-40°C to 85°C
Operating Humidity
10% to 90% relative humidity, noncondensing
Operating Pressure
105 to 69 kPa (up to 10000 ft.)
Storage Temperature
-55°C to 100°C
Storage Humidity
5% to 95% relative humidity, noncondensing
Storage Pressure
1682 PSI (up to 5000 ft.) at 50°C
Figure:
mechanical dimensions
1
1
if no tolerances specified ± 0.15mm
Swissbit AG
Industriestrasse 4
CH-9552 Bronschhofen
Fon: +41 (0) 71 913 03 03
Fax: +41 (0) 71 913 03 15
www.swissbit.com
eMail: info@swissbit.com
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