BGA7024
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Rev. 3 — 11 June 2014
Product data sheet
1. Product profile
1.1 General description
The BGA7024 MMIC is a one-stage amplifier, available in a low-cost surface-mount
package. It delivers 24 dBm output power at 1 dB gain compression and superior
performance up to 2700 MHz.
1.2 Features and benefits
400 MHz to 2700 MHz frequency operating range
16 dB small signal gain at 2 GHz
24 dBm output power at 1 dB gain compression
Integrated active biasing
External matching allows broad application optimization of the electrical performance
5 V single supply operation
All pins ESD protected
1.3 Applications
Broadband CPE/MoCA
Industrial applications
WLAN/ISM/RFID
E-metering
Wireless infrastructure (base station,
Satellite Master Antenna TV (SMATV)
repeater, point-to-point backhaul systems)
1.4 Quick reference data
Table 1.
Quick reference data
Input and output impedances matched to 50
. Typical values at V
CC
= 5 V; T
case
= 25
C;
unless otherwise specified.
Symbol Parameter
I
CC
f
G
p
P
L(1dB)
IP3
O
[1]
[2]
Conditions
[1]
Min
95
400
Typ
110
-
Max
125
16.5
Unit
mA
dB
dBm
dBm
supply current
frequency
power gain
output power at 1 dB gain compression
output third-order intercept point
f = 2140 MHz
f = 2140 MHz
f = 2140 MHz
[2]
2700 MHz
13.5 15
24.0 25.5 -
35.0 38.5 -
Operation outside this range is possible but not guaranteed.
P
L
= 11 dBm per tone; spacing = 1 MHz.
NXP Semiconductors
BGA7024
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
V
CC(RF)
GND
RF_IN
[1]
[2]
[1]
Simplified outline
Graphic symbol
[1]
[2]
This pin is DC-coupled and requires an external DC-blocking capacitor.
The center metal base of the SOT89 also functions as heatsink for the power amplifier.
3. Ordering information
Table 3.
Ordering information
Package
Name
BGA7024
-
Description
plastic surface-mounted package; exposed die pad for good
heat transfer; 3 leads
Version
SOT89
Type number
4. Functional diagram
BIAS
ENABLE
BANDGAP
V/I
CONVERTER
RF_IN
3
1
V
CC(RF)
2
GND
014aab020
Fig 1.
Functional diagram
BGA7024
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 11 June 2014
2 of 23
NXP Semiconductors
BGA7024
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC(RF)
P
i(RF)
T
case
T
j
V
ESD
Parameter
RF supply voltage
RF input power
case temperature
junction temperature
electrostatic discharge voltage
Human Body Model (HBM);
according to JEDEC standard 22-A114E
Charged Device Model (CDM);
according to JEDEC standard 22-C101B
Conditions
Min
-
-
40
-
-
-
Max
5.7
25
+85
150
2000
500
Unit
V
dBm
C
C
V
V
6. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
[1][2]
Typ
25
Unit
K/W
Case is ground solder pad.
Thermal resistance measured using infrared measurement technique, device mounted on application board
and placed in still air.
7. Static characteristics
Table 6.
Characteristics
Input and output impedances matched to 50
. Typical values at V
CC
= 5 V; T
case
= 25
C; unless
otherwise specified.
Symbol
V
CC
I
CC
Parameter
supply voltage
supply current
Conditions
Min
-
95
Typ
5.0
110
Max
-
125
Unit
V
mA
8. Dynamic characteristics
Table 7.
Dynamic characteristics
Input and output impedances matched to 50
. Typical values at V
CC
= 5 V; T
case
= 25
C; see
Section 12 “Application information”;
unless otherwise specified.
Symbol Parameter
f
G
p
frequency
power gain
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 2445 MHz
Conditions
[1]
Min
400
-
-
-
Typ
-
22
16
14
Max
-
-
16.5
-
Unit
dB
dB
dB
dB
2700 MHz
13.5 15
BGA7024
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 11 June 2014
3 of 23
NXP Semiconductors
BGA7024
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 7.
Dynamic characteristics
…continued
Input and output impedances matched to 50
. Typical values at V
CC
= 5 V; T
case
= 25
C; see
Section 12 “Application information”;
unless otherwise specified.
Symbol Parameter
P
L(1dB)
output power at 1 dB gain compression
Conditions
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 2445 MHz
IP3
O
output third-order intercept point
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 2445 MHz
NF
noise figure
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 2445 MHz
RL
in
input return loss
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 2445 MHz
RL
out
output return loss
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 2445 MHz
[1]
[2]
[3]
Operation outside this range is possible but not guaranteed.
P
L
= 11 dBm per tone; spacing = 1 MHz.
Defined at P
i(RF)
=
40
dBm; small signal conditions.
[2]
[2]
[2]
[2]
[3]
[3]
[3]
[3]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
24
Max
-
Unit
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
25.5 -
24.5 -
37.5 -
38.0 -
37.5 -
2.9
3.7
3.7
4.0
9
10
10
14
29
22
29
11
-
-
-
-
-
-
-
-
-
-
-
-
24.0 25.5 -
35.0 38.0 -
9. Scattering parameters
Table 8.
Scattering parameters at 5 V, MMIC only
S
21
Angle
(degree)
178.9
178.7
176.4
173.8
171.1
168.3
165.4
162.7
159.9
157.3
Magnitude
(ratio)
14.03
11.69
9.93
8.67
7.68
6.9
6.29
5.72
5.23
4.80
Angle
(degree)
112.7
104.4
98.19
93.04
88.54
84.36
80.24
76.42
72.83
69.34
S
12
Magnitude
(ratio)
0.01
0.01
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.03
Angle
(degree)
35.5
38.77
41.13
43.1
44.34
44.96
45.07
45
44.54
44.17
S
22
Magnitude
(ratio)
0.53
0.56
0.57
0.58
0.58
0.59
0.60
0.60
0.60
0.61
Angle
(degree)
166.3
168.9
172.2
174.8
177.4
179.7
176.7
173.3
170.9
168.4
4 of 23
f (MHz) S
11
Magnitude
(ratio)
400
500
600
700
800
900
1000
1100
1200
1300
BGA7024
0.83
0.85
0.85
0.86
0.86
0.86
0.86
0.87
0.88
0.88
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 11 June 2014
NXP Semiconductors
BGA7024
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 8.
Scattering parameters at 5 V, MMIC only
…continued
S
21
Angle
(degree)
154.8
153
151.3
149.9
148.7
147.9
147.5
147
146.9
146.6
146.5
146.3
146
145.4
Magnitude
(ratio)
4.43
4.09
3.80
3.54
3.30
3.11
2.93
2.78
2.65
2.54
2.46
2.39
2.34
2.30
Angle
(degree)
66.17
63.33
60.8
58.3
56.13
54.13
52.63
50.91
49.5
48.13
46.88
45.39
43.93
42.24
S
12
Magnitude
(ratio)
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.05
0.05
Angle
(degree)
43.58
43.02
42.67
42.36
41.89
41.65
41.7
41.61
41.59
41.44
41.61
41.45
41.13
40.56
S
22
Magnitude
(ratio)
0.61
0.62
0.63
0.64
0.65
0.66
0.66
0.66
0.67
0.66
0.66
0.66
0.65
0.64
Angle
(degree)
166.4
164.7
163.1
162.1
161.2
160.8
160.5
160.5
160.9
161.6
161.7
162.6
162.8
163.2
Magnitude
(ratio)
f (MHz) S
11
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
0.89
0.89
0.89
0.90
0.90
0.90
0.91
0.90
0.90
0.90
0.90
0.89
0.88
0.87
10. Reliability information
Table 9.
HTOL
Reliability
Intrinsic failure rate
4
according to JESD85; confidence level 60 %; T
j
= 55
C;
activation energy = 0.7 eV; acceleration factor according to
Arrhenius equation
Life test Conditions
11. Moisture sensitivity
Table 10.
Moisture sensitivity level
Class
1
Test methodology
JESD-22-A113
BGA7024
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 11 June 2014
5 of 23
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