BGA2715
MMIC wideband amplifier
Rev. 3 — 12 September 2011
Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Internally matched to 50
Wide frequency range (3.3 GHz at 3 dB bandwidth)
Flat 22 dB gain (1 dB up to 2.8 GHz)
8
dBm output power at 1dB compression point
Good linearity for low current (IP3
out
= 2 dBm)
Low second harmonic,
30
dBc at P
D
=
40
dBm
Unconditionally stable (K
2).
1.3 Applications
LNB IF amplifiers
Cable systems
ISM
General purpose.
1.4 Quick reference data
Table 1.
Symbol
V
S
I
S
s
21
2
NF
P
L(sat)
Quick reference data
Parameter
DC supply voltage
supply current
insertion power gain
noise figure
saturated load power
f = 1 GHz
f = 1 GHz
f = 1 GHz
Conditions
Min
-
-
-
-
-
Typ
5
4.3
22
2.6
4
Max
6
-
-
-
-
Unit
V
mA
dB
dB
dBm
NXP Semiconductors
BGA2715
MMIC wideband amplifier
2. Pinning information
Table 2.
Pin
1
2, 5
3
4
6
Pinning
Description
V
S
GND2
RF_OUT
GND1
RF_IN
1
2
3
4
2, 5
sym052
Simplified outline
6
5
4
Symbol
1
6
3
3. Ordering information
Table 3.
Ordering information
Package
Name
BGA2715
-
Description
plastic surface mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
BGA2715
Marking
Marking code
B6-
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
S
I
S
P
tot
T
stg
T
j
P
D
Parameter
DC supply voltage
supply current
total power dissipation
storage temperature
junction temperature
maximum drive power
T
sp
90
C
Conditions
RF input
AC coupled
Min
-
-
-
65
-
-
Max
6
8
200
+150
150
10
Unit
V
mA
mW
C
C
dBm
BGA2715
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 12 September 2011
2 of 15
NXP Semiconductors
BGA2715
MMIC wideband amplifier
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
P
tot
= 200 mW;
T
sp
90
C
Typ
300
Unit
K/W
7. Characteristics
Table 7.
Characteristics
V
S
= 5 V; I
S
= 4.3 mA; T
j
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter
I
S
s
21
2
supply current
insertion power gain
f = 100 MHz
f = 1 GHz
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
s
11
2
s
22
2
s
12
2
NF
B
K
P
L(sat)
P
L(1dB)
input return losses
output return losses
isolation
noise figure
bandwidth
stability factor
saturated load power
load power
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1.6 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at
s
21
2
3
dB below flat gain
at 1 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at 1 dB gain compression;
f = 1 GHz
at 1 dB gain compression;
f = 2.2 GHz
IM2
second order
intermodulation
product
input, third order
intercept point
output, third order
intercept point
at P
D
=
40
dBm, f
0
= 1 GHz
Conditions
Min
3.5
11
20
21
21
20
18
10
8
10
7
53
38
-
-
3
-
-
5
6
9
10
29
Typ
4.3
13.3
21.7
23.2
23.3
22.1
20.1
12
10
12
8.5
54
39
2.6
3.1
3.3
18
2.3
4.0
5.0
8.0
8.5
30
Max Unit
5.5
15
23
25
25
24
22
-
-
-
-
-
-
2.8
3.3
-
-
-
-
-
-
-
-
dBm
dBm
dBm
dBm
dBc
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz
IP3
in
IP3
out
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
21
24
0
1
19.4
22.7
2.3
0.6
-
-
-
-
dBm
dBm
dBm
dBm
BGA2715
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 12 September 2011
3 of 15
NXP Semiconductors
BGA2715
MMIC wideband amplifier
8. Application information
Figure 1
shows a typical application circuit for the BGA2715 MMIC. The device is
internally matched to 50
,
and therefore does not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The 22 nF supply decoupling capacitor, C1 should be located as close as possible to the
MMIC.
The printed-circuit board (PCB) top ground plane, connected to pins 2, 4 and 5 must be as
close as possible to the MMIC, and ideally directly beneath it. When using via holes, use
multiple via holes, located as close as possible to the MMIC.
V
S
C1
1
V
S
C2
RF input
6
RF_IN
RF_OUT
3
C3
RF output
GND1
GND2
4
2, 5
mgu435
Fig 1.
Typical application circuit.
Figure 2
shows the PCB layout, used for the standard demonstration board.
BGA2715
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 12 September 2011
4 of 15
NXP Semiconductors
BGA2715
MMIC wideband amplifier
30 mm
PH
30 mm
PHILIPS
IN
OUT
V
+
PH
DUT
C2
C3
PHILIPS
IN
C1
OUT
V
+
001aab255
Material = FR4, thickness = 0.6 mm,
r
= 4.6.
Fig 2.
PCB layout and demonstration board showing components.
8.1 Grounding and output impedance
If the grounding is not optimal, the gain becomes less flat and the 50
output matching
becomes worse. To further increase output matching to 50
,
a 12
resistor (R1) can be
placed in series with C3 (see
Figure 3).
This will significantly improve the output
impedance, at the cost of 1 dB gain and 1 dB output power.
BGA2715
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 12 September 2011
5 of 15
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