STB160N75F3
STP160N75F3 - STW160N75F3
N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D
2
PAK
STripFET™ Power MOSFET
Features
Type
STB160N75F3
STP160N75F3
STW160N75F3
V
DSS
75V
75V
75V
R
DS(on)
(max.)
3.7 mΩ
4 mΩ
4 mΩ
I
D
120 A
(1)
1
3
2
1
2
3
120
A
(1)
TO-220
TO-247
120 A
(1)
3
1
1. Current limited by package
■
■
Ultra low on-resistance
100% Avalanche tested
D²PAK
Application
■
Switching applications
Figure 1.
Internal schematic diagram
Description
This N-channel enhancement mode Power
MOSFET is the latest refinement of ST’s
STripFET™ process. The resulting transistor
shows extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
Table 1.
Device summary
Marking
160N75F3
160N75F3
160N75F3
Package
D²PAK
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Order codes
STB160N75F3
STP160N75F3
STW160N75F3
October 2007
Rev 2
1/16
www.st.com
16
Contents
STB160N75F3 - STP160N75F3 - STW160N75F3
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
STB160N75F3 - STP160N75F3 - STW160N75F3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
DS
V
GS
I
D (1)
I
D (1)
I
DM(2)
P
TOT
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Value
75
± 20
120
120
480
330
2.2
20
600
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
dv/dt
(3)
E
AS (4)
T
j
T
stg
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature
Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. I
SD
< 120A, di/dt < 1100 A/µs, V
DD
< 60V, T
J
< T
JMAX
4. Starting TJ = 25°C, I
D
= 60A, V
DD
= 25V
Table 3.
Symbol
Rthj-case
Rthj-amb
Rthj-pcb
(1)
T
l
Thermal resistance
Value
Parameter
TO-220
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb
Maximum lead temperature for soldering
purpose
62.5
--
TO-247
0.45
50
--
300
--
50
D²PAK
°C/W
°C/W
°C/W
°C
Unit
1. When mounted on 1 inch
² FR4 2 oz Cu
3/16
Electrical characteristics
STB160N75F3 - STP160N75F3 - STW160N75F3
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
On/off states
Parameter
Drain-source
breakdown voltage
Test conditions
I
D
= 250µA, V
GS
= 0
Min. Typ.
75
10
100
±
200
Max Unit
V
µA
µA
nA
V
mΩ
mΩ
I
DSS
V
DS
= Max rating,
Zero gate voltage
V = Max
drain current (V
GS
= 0)
DS
rating,@125°C
Gate body leakage
current (V
DS
= 0)
V
GS
= ±20V
2
TO-220
TO-247
D²PAK
3.5
3.2
I
GSS
V
GS(th)
R
DS(on)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA
Static drain-source on
V
GS
= 10V, I
D
= 60A
resistance
4
4
3.7
Table 5.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
Min
Typ
6750
1080
40
85
27
26
Max Unit
pF
pF
pF
nC
nC
nC
V
DS
=25V, f=1 MHz, V
GS
=0
V
DD
=37.5V, I
D
= 120A
V
GS
=10V
(see Figure 16)
4/16
STB160N75F3 - STP160N75F3 - STW160N75F3
Table 6.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Electrical characteristics
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
=37.5 V, I
D
= 60A,
R
G
=4.7Ω, V
GS
=10V,
(see Figure 18)
Min.
Typ.
22
65
100
15
Max. Unit
ns
ns
ns
ns
Table 7.
Symbol
I
SD
I
SDM(1)
V
SD(2)
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=120A, V
GS
=0
I
SD
=120A, V
DD
= 20 V,
di/dt = 100 A/µs, Tj=25°C
(see Figure 17)
70
150
4.2
Test conditions
Min.
Typ.
Max. Unit
120
480
1.5
A
A
V
ns
nC
A
1. Pulse with limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/16
微控制器 MCU
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