Operating Temperature Range ........................ -40NC to +125NC
Junction Temperature .....................................................+150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
SC70
Junction-to-Ambient Thermal Resistance (B
JA
) .... 326.5NC/W
Junction-to-Case Thermal Resistance (B
JC
) .............115NC/W
Thin µDFN (Ultra-Thin LGA)
Junction-to-Ambient Thermal Resistance (B
JA
) ....... 470NC/W
Junction-to-Case Thermal Resistance (B
JC
) ............ 120NC/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
DD
= 3.3V, V
SS
= 0V, V
IN+
= V
IN-
= V
DD
/2, RL = 10kI to V
DD
/2, V
SHDN
= V
DD
, T
A
= -40NC to +125NC. Typical values are at
T
A
= +25NC, unless otherwise noted.) (Note 2)
PARAMETER
DC CHARACTERISTICS
Input Voltage Range
V
IN+
V
IN-
Guaranteed by CMRR test
T
A
= +25NC
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current (Note 3)
Input Capacitance
Common-Mode Rejection Ratio
Open-Loop Gain
Output Short-Circuit Current
V
OS
V
OS
- TC
T
A
= +25NC
I
B
C
IN
CMRR
A
OL
I
SC
V
CM
= -0.1V to (V
DD
+ 0.1V)
0.4V
P
V
OUT
P
V
DD
- 0.4V, R
OUT
= 10kI
0.4V
P
V
OUT
P
V
DD
- 0.4V, R
OUT
= 600I
0.4V
P
V
OUT
P
V
DD
- 0.4V, R
OUT
= 32I
To V
DD
or V
SS
75
100
91
T
A
= -40NC to +85NC
T
A
= -40NC to +125NC
0.4
90
115
100
80
85
mA
dB
T
A
= -40°C to +125°C after calibration
T
A
= -40°C to +125°C
0.8
0.01
-0.1
10
V
DD
+ 0.1
50
100
500
5
0.5
10
100
pF
dB
pA
FV/NC
FV
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Maxim Integrated
2
MAX44280
1.8V, 50MHz, Low-Offset,
Low-Power, Rail-to-Rail I/O Op Amp
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 3.3V, V
SS
= 0V, V
IN+
= V
IN-
= V
DD
/2, RL = 10kI to V
DD
/2, V
SHDN
= V
DD
, T
A
= -40NC to +125NC. Typical values are at
T
A
= +25NC, unless otherwise noted.) (Note 2)
PARAMETER
SYMBOL
V
OL
-
V
SS
Output Voltage Swing
V
DD
-
V
OH
AC CHARACTERISTICS
Input Voltage-Noise Density
Input Current-Noise Density
Gain-Bandwidth Product
Minimum Stable Gain
Slew Rate
Settling Time
Capacitive Load
Total Harmonic Distortion
Output Transient Recovery Time
POWER-SUPPLY CHARACTERISTICS
Power-Supply Range
Power-Supply Rejection Ratio
Quiescent Current
Shutdown Supply Current
Shutdown Input Low
Shutdown Input High
Output Leakage Current in
Shutdown
Shutdown Input Bias Current
Shutdown Turn-On Time
Turn-On Time
V
DD
PSRR
I
DD
I
SHDN
V
IL
V
IH
I
SHDN
I
IL
/I
IH
t
SHDN
t
ON
15
10
1.3
100
1
Guaranteed by PSRR
T
A
= 0NC to +70NC
V
CM
= V
DD
/2
1.8
1.7
82
95
750
1200
1
0.7
5.5
5.5
V
dB
µA
µA
V
V
pA
µA
µs
ms
C
LOAD
THD
e
n
i
n
GBWP
A
MIN
SR
V
OUT
= 2V
P-P
, V
DD
= 3.3V, A
V
= 5V/V,
C
L
= 30pF (load), settle to 0.01%
No sustained oscillation, 5V/V
No sustained oscillation, 10V/V
f = 10kHz, V
O
= 2V
P-P
, A
V
= 5V/V,
R
OUT
= 10kI
DV
OUT
= 0.2V, V
DD
= 3.3V
,
A
V
= 5V/V;
R
S
= 20Ω, C
L
= 1nF (load)
f = 10kHz
f = 10kHz
12.7
1.2
50
5
30
0.6
80
500
-110
1
nV/√Hz
fA/√Hz
MHz
V/V
V/Fs
µs
pF
dB
µs
R
OUT
= 10kI
R
OUT
= 600I
R
OUT
= 32I
R
OUT
= 10kI
R
OUT
= 600I
R
OUT
= 32I
400
400
CONDITIONS
MIN
TYP
MAX
20
50
700
10
40
800
mV
UNITS
Note 2:
All devices are 100% production tested at T
A
= +25NC. Temperature limits are guaranteed by design.
Note 3:
Guaranteed by design.
Maxim Integrated
3
MAX44280
1.8V, 50MHz, Low-Offset,
Low-Power, Rail-to-Rail I/O Op Amp
Typical Operating Characteristics
(V
DD
= 3.3V, V
SS
= 0V, V
IN+
= V
IN-
= V
DD
/2, R
L
= 10kI to V
DD
/2, V
SHDN
= V
DD
, T
A
= -40NC to +125NC. Typical values are at
T
A
= +25NC, unless otherwise noted. All devices are 100% production tested at T
A
= +25NC. Temperature limits are guaranteed by design.)
INPUT OFFSET VOLTAGE
vs. COMMON-MODE VOLTAGE
MAX44280 toc01
INPUT OFFSET VOLTAGE
vs. SUPPLY VOLTAGE
MAX44280 toc02
80
INPUT OFFSET VOLTAGE (µV)
60
40
20
0
-20
-40
-60
-80
-100
INPUT OFFSET VOLTAGE (µV)
40
20
0
-20
-40
-60
-0.5
0
0.5
1.0
1.5
2.0
T
A
= +25°C
T
A
= +125°C
2.5
3.0
T
A
= -40°C
T
A
= -40°C
PERCENT OCCURRENCE (%)
20
15
10
5
0
-15 -10
-5
0
5
T
A
= +25°C
T
A
= +125°C
3.5
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
10
15
20
25
COMMON-MODE VOLTAGE (V)
SUPPLY VOLTAGE (V)
INPUT OFFSET VOLTAGE (µV)
INPUT OFFSET DRIFT HISTOGRAM
MAX44280 toc04
INPUT BIAS CURRENT
vs. COMMON-MODE VOLTAGE
MAX44280 toc05
OUTPUT VOLTAGE LOW
vs. OUTPUT SINK CURRENT
(V
OL
- V
EE
, V
CC
= 1.8V)
180
OUTPUT VOLTAGE LOW (mV)
160
140
120
100
80
60
40
20
0
T
A
= +125°C
T
A
= -40°C
T
A
= +25°C
MAX44280 toc06
18
16
PERCENT OCCURRENCE (%)
14
12
10
8
6
4
2
0
-2
100
80
INPUT BIAS CURRENT (pA)
60
40
20
0
-20
-40
-60
-80
-100
-0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
T
A
= -40°C
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
200
-1.5 -1 -0.5
0
0.50 1.00
-1.8 -1.3 -0.8 -0.3 0.25 0.75 1.25
INPUT OFFSET DRIFT (µV/°C)
3.5
0.1
COMMON-MODE VOLTAGE (V)
1
10
OUTPUT SINK CURRENT (mA)
100
Maxim Integrated
MAX44280 toc03
60
100
INPUT V
OS
HISTOGRAM
25
4
MAX44280
1.8V, 50MHz, Low-Offset,
Low-Power, Rail-to-Rail I/O Op Amp
Typical Operating Characteristics (continued)
(V
DD
= 3.3V, V
SS
= 0V, V
IN+
= V
IN-
= V
DD
/2, R
L
= 10kI to V
DD
/2, V
SHDN
= V
DD
, T
A
= -40NC to +125NC. Typical values are at
T
A
= +25NC, unless otherwise noted. All devices are 100% production tested at T
A
= +25NC. Temperature limits are guaranteed by design.)
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