CMPA0060002F
2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider
bandwidths compared to Si and GaAs transistors. This MMIC employs a
distributed (traveling-wave) amplifier design approach, enabling extremely
wide bandwidths to be achieved in a small footprint screw-down package
featuring a copper-tungsten heat sink.
PN: CMPA006
0002F
Package Type
: 780019
Typical Performance Over 20 MHz - 6.0 GHz
(T
C
= 25˚C)
Parameter
Gain
Saturated Output Power, P
SAT1
Power Gain @ P
SAT1
PAE @ P
SAT1
20 MHz
19.9
4.3
14.7
34
0.5 GHz
18.8
4.1
13.1
28
1.0 GHz
17.8
4.5
12.6
29
2.0 GHz
16.8
4.2
12.2
28
3.0 GHz
16.8
3.7
12.6
24
4.0 GHz
17.5
3.9
10.9
26
5.0 GHz
18.5
4.8
12.2
33
6.0 GHz
16.5
3.7
9.5
20
Units
dB
W
dB
%
Note
1
: P
SAT
is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA.
Note
2
: V
DD
= 28 V, I
DQ
= 100 mA
Features
Applications
•
•
•
•
•
•
Rev 3.0 – May 2
015
17 dB Small Signal Gain
3 W Typical P
SAT
Operation up to 28 V
High Breakdown Voltage
High Temperature Operation
0.5” x 0.5” total product size
•
•
•
•
Ultra Broadband Amplifiers
Fiber Drivers
Test Instrumentation
EMC Amplifier Drivers
Figure 1.
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
1
Screw Torque
Thermal Resistance, Junction to Case
Case Operating Temperature
2,3
Symbol
V
DSS
V
GS
T
STG
T
J
I
GMAX
T
S
Rating
84
-10, +2
-65, +150
225
4
245
40
4.3
-40, +150
Units
VDC
VDC
˚C
˚C
mA
˚C
in-oz
˚C/W
˚C
τ
R
θJC
T
C
Note:
1
Refer to the Application Note on soldering at
www.cree.com/RF/Document-Library
2
Measured for the CMPA0060002F at P
DISS
= 2 W.
Electrical Characteristics
(Frequency = 20 MHz to 6.0 GHz unless otherwise stated; T
C
= 25˚C)
Characteristics
DC Characteristics
Gate Threshold Voltage
1
Gate Quiescent Voltage
Saturated Drain Current
RF Characteristics
Small Signal Gain
Input Return Loss
Output Return Loss
Power Output
Power Added Efficiency
Power Gain
S21
S11
S22
P
OUT
PAE
G
P
13.5
–
–
2
–
10
17
-9
-9
3
23
–
21.5
-5
-5
–
–
–
dB
dB
dB
W
%
dB
V
DD
= 28 V, I
DQ
= 100 mA
V
DD
= 28 V, I
DQ
= 100 mA
V
DD
= 28 V, I
DQ
= 100 mA
V
DD
= 28 V, I
DQ
= 100 mA,
Frequency = 4.0 GHz, P
IN
= 23 dBm
V
DD
= 28 V, I
DQ
= 100 mA,
Frequency = 4.0 GHz, P
IN
= 23 dBm
V
DD
= 28 V, I
DQ
= 100 mA,
Frequency = 4.0 GHz, P
IN
= 23 dBm
No damage at all phase angles,
V
DD
= 28 V, I
DQ
= 100 mA,
P
IN
= 23 dBm
V
(GS)TH
V
(GS)Q
I
DC
-3.8
–
–
-3.0
-2.7
1.4
-2.7
–
–
V
VDC
A
V
DS
= 20 V, ∆I
D
= 2 mA
V
DD
= 28 V, I
DQ
= 100 mA
V
DS
= 6.0 V, V
GS
= 2.0 V
Symbol
Min.
Typ.
Max.
Units
Conditions
Output Mismatch Stress
VSWR
–
–
5:1
Y
Notes:
1
The device will draw approximately 20-25 mA at pinch off due to the internal circuit structure.
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2
CMPA0060002F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Small Signal Gain and Return Losses
vs Frequency at 28 V
S21_28V
24
22
20
18
16
S21_28V
S11_28V
S22_28V
0
-2
-4
-8
-10
-12
-14
-16
-18
-20
-22
-24
0
1
2
3
4
5
6
Gain (dB)
14
12
10
8
6
4
2
0
Frequency (GHz)
Power Gain vs Frequency at 28V
20
18
16
14
12
10
8
6
4
2
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Gain (Output Power = 34dBm, 28V)
Gain (Output Power = 33dBm, 28V)
Gain (dB)
Frequency (GHz)
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
3
CMPA0060002F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Input/Ouput Return Loss (dB)
-6
Typical Performance
Saturated Output Power Performance (P
SAT
) vs Frequency
Psat_28V
40.0
39.0
38.0
37.0
36.0
35.0
34.0
33.0
32.0
31.0
30.0
0.0
1.0
2.0
Frequency
(GHz)
0.02
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
P
SAT
at 28V
(dBm)
36.6
36.2
36.5
36.8
36.3
35.1
35.7
34.6
35.9
35.7
36.8
34.8
34.3
P
SAT
at 28V
(W)
4.3
4.1
4.5
4.7
4.2
3.3
3.7
2.9
3.9
3.8
4.8
3.0
2.7
Saturated Output Power (dBm)
Frequency (GHz)
3.0
4.0
5.0
6.0
5.5
6.0
Note: P
SAT
is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA.
PAE at 33 & 34 dBm Output
Power vs Frequency at 28 V
PAE vs Freq. 28 V
30%
25%
Power Added Efficiency (%)
20%
15%
10%
5%
PAE at 34dBm, 28V
PAE at 33dBm, 28V
0%
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
4
CMPA0060002F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
General Device Information
The CMPA0060002F is a GaN HEMT MMIC Distributed Driver Amplifier, which operates between 20 MHz - 6.0 GHz. The ampli-
fier typically provides 17 dB of small signal gain and 2 W saturated output power with an associated power added efficiency of better
than 20 %. The wideband amplifier’s input and output are internally matched to 50 Ohm. The amplifier requires bias from appropriate
Bias-T’s, through the RF input and output ports.
The CMPA0060002F is provided in a flange package format. The input and output connections are gold plated to enable gold
bond wire attach at the next level assembly.
The measurements in this data sheet were taken on devices wire-bonded to the test fixture with 2 mil gold bond wires. The
CMPA0060002F-AMP and the device were then measured using external Bias-T’s, (Aeroflex: 8800, SMF3-12; TECDIA: AMPT-06M20 or
similar), as shown in Figure 2. The Bias-T’s were included in the calibration of the test system. All other losses associated with the test
fixture are included in the measurements.
V
GG
V
DD
RF In
Input Bias T
CMPA2560002F
CMPA0060002F
mounted
in the test fixture
Figure 2. Typical test system setup required for measuring CMPA0060002F-AMP
RF Out
Output Bias T
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
II (200 < 500 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
5
CMPA0060002F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
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