IL211AT, IL212AT, IL213AT
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8 Package
FEATURES
A
1
K
2
8
7
6
5
V
D E
NC
B
C
E
• Isolation test voltage, 4000 V
RMS
• Industry standard SOIC-8 surface mountable
package
• Compatible with dual wave, vapor phase and IR
reflow soldering
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
NC
3
NC
4
i179002-1
i179025
DESCRIPTION
The IL211AT, IL212AT, IL213AT are optically coupled pairs
with a gallium arsenide infrared LED and silicon NPN
phototransistor. Signal information, including a DC level,
can be transmitted by the device while maintaining a high
degree of electrical isolation between input and output.
The IL211AT, IL212AT, IL213AT comes in a standard
SOIC-8 small outline package for surface mounting which
makes it ideally suited for high density applications with
limited space. In addition to eliminating through-holes
requirements, this package conforms to standards for
surface mounted devices.
A choice of 20 %, 50 %, and 100 % minimum CTR at
I
F
= 10 mA makes these optocouplers suitable for a variety
of different applications.
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• cUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-2 (VDE 0884)
(1)
• DIN EN 60747-5-5 (pending)
(1)
Note
(1)
Available upon request, as option 1
ORDERING INFORMATION
SOIC-8
I
L
2
1
PART NUMBER
#
A
T
6.1 mm
AGENCY CERTIFIED/PACKAGE
UL, cUL
SOIC-8
> 20
IL211AT
CTR (%)
10 mA
> 50
IL212AT
> 100
IL213AT
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Peak reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown voltage
I
CMAX. DC
I
CMAX.
Power dissipation
Derate linearly from 25 °C
Rev. 1.9, 21-Dec-10
t < 1 ms
BV
CEO
BV
ECO
V
CBO
I
CMAX. DC
I
CMAX.
P
diss
30
7
70
50
100
150
2
V
V
V
mA
mA
mW
mW/°C
V
R
I
F
P
diss
6
60
90
1.2
V
mA
mW
mW/°C
TEST CONDITION
SYMBOL
VALUE
UNIT
Document Number: 83615
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IL211AT, IL212AT, IL213AT
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
ISO
LED and detector
P
tot
T
stg
T
amb
at 260 °C
VALUE
4000
240
3.2
-55 to +150
-55 to +100
10
UNIT
V
RMS
mW
mW/°C
°C
°C
s
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
COUPLER
Isolation test voltage
Total package dissipation
Derate linearly from 25 °C
Storage temperature
Operating temperature
Soldering time
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector dark current
Collector emitter capacitance
COUPLER
Saturation voltage, collector emitter
Isolation test voltage
Capacitance (input to output)
Resistance (input to output)
Collector emitter breakdown voltage
I
C
= 10 μA
I
F
= 10 mA
1s
V
CEsat
V
ISO
C
IO
R
IO
BV
CEO
-
4000
-
-
30
-
-
0.5
100
-
0.4
-
50
-
-
V
V
RMS
pF
GΩ
V
I
C
= 10 μA
I
E
= 10 μA
V
CE
= 10 V
V
CE
= 0 V
BV
CEO
BV
ECO
I
CEO
C
CE
30
7
-
-
-
-
5
10
-
-
50
V
V
nA
pF
I
F
= 10 mA
V
R
= 6 V
V
R
= 0 V
V
F
I
R
C
O
-
-
-
1.3
0.1
13
1.5
100
-
V
μA
pF
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
• Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
TEST CONDITION
I
F
= 10 mA, V
CE
= 5 V
PART
IL211AT
IL212AT
IL213AT
SYMBOL
CTR
CTR
CTR
MIN.
20
50
100
TYP.
50
80
130
MAX.
-
-
-
UNIT
%
%
%
SWITCHING CHARACTERISTICS
PARAMETER
Switching time
TEST CONDITION
I
C
= 2 mA, R
L
= 100
Ω,
V
CC
= 10 V
PART
SYMBOL
t
on
, t
off
MIN.
-
TYP.
3
MAX.
-
UNIT
μs
Rev. 1.9, 21-Dec-10
Document Number: 83615
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IL211AT, IL212AT, IL213AT
www.vishay.com
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
Comparative tracking index
V
IOTM
V
IORM
P
SO
I
SI
T
SI
Creepage distance
Clearance distance
Insulation thickness
TEST CONDITION
According to IEC 68 part 1
CTI
SYMBOL
MIN.
-
175
6000
560
-
-
-
4
4
0.2
TYP.
55 / 100 / 21
-
-
-
-
-
-
-
-
-
MAX.
-
399
-
-
350
150
165
-
-
-
V
V
mW
mA
°C
mm
mm
mm
UNIT
Vishay Semiconductors
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “Safe Electrical Insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1.8
10 000
I
CE0
- Leakage Current (nA)
I
F
= 0 mA
1000
100
10
1
0.1
0.01
0.001
- 60 - 40 - 20
V
CE
= 40 V
V
CE
= 24 V
V
CE
= 12 V
V
F
- Forward Voltage (V)
1.6
T
amb
= 0 °C
1.4
1.2
1.0
0.8
0.6
0.1
T
amb
= - 40 °C
T
amb
= - 55 °C
T
amb
= 25 °C
T
amb
= 50 °C
T
amb
= 75 °C
T
amb
= 100 °C
1
10
100
0
20
40
60
80 100
22462
I
F
- Forward Current (mA)
22466
T
amb
- Ambient Temperature (°C)
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 3 - Leakage Current vs. Ambient Temperature
50
30
I
C
- Collector Current (mA)
I
C
- Collector Current (mA)
45
40
35
30
25
20
15
10
5
0
0
1
2
3
I
F
= 30 mA
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
25
20
15
10
5
0
I
F
= 25 mA
I
F
= 10 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 1 mA
I
F
= 2 mA
4
5
6
7
8
22464
0
0.1
0.2
0.3
0.4
22463
V
CE
- Collector Emitter Voltage (NS) (V)
V
CE
- Collector Emitter Voltage (sat) (V)
Fig. 2 - Collector Current vs. Collector Emitter Voltage
(non-saturated)
Fig. 4 - Collector Current vs. Collector Emitter Voltage
(saturated)
Rev. 1.9, 21-Dec-10
Document Number: 83615
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IL211AT, IL212AT, IL213AT
www.vishay.com
Vishay Semiconductors
1.2
1.4
N
CTR
- Normalized CTR (NS)
N
CTR
- Normalized CTR (sat)
I
F
= 10 mA
V
CE
= 5 V
1.0
0.8
0.6
0.4
I
F
= 1 mA
I
F
= 5 mA
1.2
1.0
T
amb
= 0 °C
T
amb
= - 40 °C
T
amb
= - 55 °C
V
CE
= 0.4 V
0.8
0.6
0.4
0.2
0.0
T
amb
= 25 °C
T
amb
= 50 °C
T
amb
= 75 °C
T
amb
= 100 °C
0.2
0
- 60 - 40 - 20
0
20
40
60
80 100
22486
0.1
1
10
100
22490
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
Fig. 5 - Normalized CTR (non-saturated) vs. Ambient Temperature
Fig. 8 - Normalized CTR (saturated) vs. Forward Current
1.4
N
CTR
- Normalized CTR (sat)
1.2
1.0
0.8
0.6
0.4
0.2
0
I
F
= 5 mA
I
F
= 10 mA
V
CE
= 0.4 V
10
V
CE
= 5 V
NI
BP
- Normalized (I
BP
)
1
T
amb
= 0 °C
T
amb
= - 40 °C
T
amb
= - 55 °C
I
F
= 1 mA
0.1
T
amb
= 25 °C
T
amb
= 50 °C
T
amb
= 75 °C
- 60 - 40 - 20
22489
0
20
40
60
80 100
0.01
0.1
22487
T
amb
= 100 °C
1
10
100
T
amb
- Ambient Temperature (°C)
I
F
- LED Current (mA)
Fig. 6 - Normalized CTR (saturated) vs. Ambient Temperature
Fig. 9 - Normalized Photocurrent vs. LED Current
NH
FE
(sat) - Normalized
Saturated
H
FE
1.2
2.0
V
CE
= 0.4 V
1.6
1.2
0.8
0.4
T
amb
= - 55 °C
0
1
10
100
T
amb
= 100 °C
T
amb
= 75 °C
T
amb
= 50 °C
T
amb
= 25 °C
T
amb
= 0 °C
T
amb
= - 40 °C
N
CTR
- Normalized CTR (NS)
V
CE
= 5 V
T
amb
= 0 °C
T
amb
= - 40 °C
1.0
0.8
T
amb
= - 55 °C
0.6
0.4
0.2
0
0.1
T
amb
= 25 °C
T
amb
= 50 °C
T
amb
= 75 °C
T
amb
= 100 °C
1
10
100
22488
22485
I
F
- Forward Current (mA)
I
B
- Base Current (μA)
Fig. 7 - Normalized CTR (non-saturated) vs. Forward Current
Fig. 10 - Normalized Saturated H
FE
vs. Base Current
Rev. 1.9, 21-Dec-10
Document Number: 83615
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IL211AT, IL212AT, IL213AT
www.vishay.com
Vishay Semiconductors
0
- 20
- 40
1000
t
on
, t
off
-
Switching
Time (μs)
V
CE
= 5 V
100
V
CE
= 5 V, I
F
= 10 mA
Pulse width = 100 ms
f = 1 kHz
t
off
Phase (deg)
- 60
- 80
- 100
- 120
- 140
- 160
1
10
100
1000
10
t
on
1
0.1
0.1
1
10
100
22470
f (kHz)
Fig. 11 - F
CTR
vs. Phase Angle
22491
R
L
- Load Resistance (kΩ)
Fig. 13 - Switching Time vs. Load Resistance
1000
100
t
on
, t
off
-
Switching
Time (μs)
V
CC
= 5 V
V
CE
= 5 V, I
F
= 10 mA
Pulse width = 100 μs
f = 1 kHz, R
L
= 2.2 kΩ
t
off
F
CTR
(kHz)
100
10
10
t
on
1
0.1
22471
1
10
100
22492
1
10
100
1000
10 000
I
C
- Collector Current (mA)
Fig. 12 - F
CTR
vs. I
C
R
BE
- Base Emitter Resistance (kΩ)
Fig. 14 - Switching Time vs. Base Emitter Resistance
Rev. 1.9, 21-Dec-10
Document Number: 83615
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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