IL410, IL4108
Vishay Semiconductors
Optocoupler, Phototriac Output, Zero Crossing,
High dV/dt, Low Input Current
A 1
C 2
NC 3
21842-1
i179030_4
6 MT2
5 NC
ZCC*
4 MT1
V
D E
FEATURES
• High input sensitivity
• I
FT
= 2 mA, PF = 1.0
• I
FT
= 5 mA, PF
1.0
• 300 mA on-state current
• Zero voltage crossing detector
• 600 V, 800 V blocking voltage
• High static dV/dt 10 kV/μs
• Very low leakage < 10
A
• Isolation test voltage 5300 V
RMS
• Small 6 pin DIP package
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
*Zero crossing circuit
DESCRIPTION
The IL410 and IL4108 consists of a GaAs IRLED optically
coupled to a photosensitive zero crossing TRIAC network.
The TRIAC consists of two inverse parallel connected
monolithic SCRs. These three semiconductors are
assembled in a six pin dual in-line package.
High input sensitivity is achieved by using an emitter
follower phototransistor and a cascaded SCR predriver
resulting in an LED trigger current of less than 2 mA (DC).
The use of a proprietary dV/dt clamp results in a static dV/dt
of greater than 10 kV/ms. This clamp circuit has a MOSFET
that is enhanced when high dV/dt spikes occur between
MT1 and MT2 of the TRIAC. When conducting, the FET
clamps the base of the phototransistor, disabling the first
stage SCR predriver.
The zero cross line voltage detection circuit consists of two
enhancement MOSFETS and a photodiode. The inhibit
voltage of the network is determined by the enhancement
voltage of the N-channel FET. The P-channel FET is enabled
by a photocurrent source that permits the FET to conduct
the main voltage to gate on the N-channel FET. Once the
main voltage can enable the N-channel, it clamps the base
of the phototransistor, disabling the first stage SCR
predriver.
The 600 V, 800 V blocking voltage permits control of off-line
voltages up to 240 V
AC
, with a safety factor of more than
two, and is sufficient for as much as 380 V
AC
.
The IL410, IL4108 isolates low-voltage logic from 120 V
AC
,
240 V
AC
, and 380 V
AC
lines to control resistive, inductive, or
capacitive loads including motors, solenoids, high current
thyristors or TRIAC and relays.
APPLICATIONS
• Solid-state relays
• Industrial controls
• Office equipment
• Consumer appliances
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
• CSA 93751
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1
ORDERING INFORMATION
DIP-#
I
L
4
1
0
#
-
X
0
#
#
T
TAPE AND
REEL
7.62 mm
Option 6
Option 7
PART NUMBER
PACKAGE OPTION
10.16 mm
> 0.7 mm
Option 8
Option 9
9.27 mm
> 0.1 mm
AGENCY CERTIFIED/PACKAGE
UL
DIP-6
DIP-6, 400 mil, option 6
SMD-6, option 7
SMD-6, option 8
SMD-6, option 9
VDE, UL
DIP-6
DIP-6, 400 mil, option 6
SMD-6, option 7
SMD-6, option 9
Note
(1)
Also available in tubes, do not put T on the end.
Document Number: 83627
Rev. 2.0, 29-Mar-11
BLOCKING VOLTAGE V
DRM
(V)
600
IL410
IL410-X006
IL410-X007T
(1)
IL410-X008T
IL410-X009T
(1)
600
IL410-X001
IL410-X016
IL410-X017
IL410-X019T
(1)
800
IL4108
IL4108-X006
IL4108-X007T
(1)
-
IL4108-X009T
(1)
800
IL4108-X001
IL4108-X016
IL4108-X017
-
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IL410, IL4108
Vishay Semiconductors
Optocoupler, Phototriac Output, Zero Crossing,
High dV/dt, Low Input Current
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
Derate from 25 °C
OUTPUT
Peak off-state voltage
RMS on-state current
Single cycle surge current
Total power dissipation
Derate from 25 °C
COUPLER
Isolation test voltage
between emitter and detector
Pollution degree (DIN VDE 0109)
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC112/VDE 0303 part 1, group IIIa
per DIN VDE 6110
Isolation resistance
Storage temperature range
Ambient temperature
Soldering temperature
(1)
max.
10
s dip soldering
0.5 mm from case bottom
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
CTI
R
IO
R
IO
T
stg
T
amb
T
sld
t=1s
IL410
IL4108
V
R
I
F
I
FSM
P
diss
6
60
2.5
100
1.33
600
800
300
3
500
6.6
V
mA
A
mW
mW/°C
V
V
mA
A
mW
mW/°C
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
V
DRM
V
DRM
I
TM
P
diss
V
ISO
5300
2
7
7
175
10
12
10
11
- 55 to + 150
- 55 to + 100
260
V
RMS
mm
mm
°C
°C
°C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
www.vishay.com
2
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83627
Rev. 2.0, 29-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IL410, IL4108
Optocoupler, Phototriac Output, Zero Crossing,
Vishay Semiconductors
High dV/dt, Low Input Current
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Reverse current
Input capacitance
Thermal resistance, junction to ambient
OUTPUT
Off-state current
On-state voltage
Surge (non-repetitive), on-state current
Trigger current 1
Trigger current 2
Trigger current temp. gradient
Inhibit voltage temp. gradient
Off-state current in inhibit state
Holding current
Latching current
Zero cross inhibit voltage
Critical rate of rise of off-state voltage
V
T
= 2.2 V
I
F
= rated I
FT
V
D
= 0.67 V
DRM
, T
j
= 25 °C
V
D
= 0.67 V
DRM
, T
j
= 80 °C
V
D
= 230 V
RMS
,
I
D
= 300 mA
RMS
, T
J
= 25 °C
V
D
= 230 V
RMS
,
I
D
= 300 mA
RMS
, T
J
= 85 °C
V
D
= 230 V
RMS
,
I
D
= 300 mA
RMS
, T
J
= 25 °C
I
F
= I
FT1
, V
D
= V
DRM
V
D
= V
DRM
, T
amb
= 100 °C,
I
F
= 0 mA
I
T
= 300 mA
f = 50 Hz
V
D
= 5 V
V
D
= 220 V
RMS
, f = 50 Hz,
T
j
= 100 °C, t
pIF
> 10 ms
I
DRM
V
TM
I
TSM
I
FT1
I
FT2
I
FT1
/T
j
I
FT2
/T
j
V
DINH
/T
j
I
DINH
I
H
I
L
V
IH
dV/dt
cr
dV/dt
cr
dV/dt
crq
dV/dt
crq
dI/dt
crq
R
thja
10 000
5000
8
7
12
150
15
7
7
- 20
50
65
200
500
500
25
10
1.7
100
3
3
2
6
14
14
μA
V
A
mA
mA
μA/°C
μA/°C
mV/°C
μA
μA
μA
V
V/μs
V/μs
V/μs
V/μs
A/ms
°C/W
I
F
= 10 mA
V
R
= 6 V
V
F
= 0 V, f = 1 MHz
V
F
I
R
C
IN
R
thja
1.16
0.1
25
750
1.35
10
V
μA
pF
°C/W
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Critical rate of rise of voltage at current
commutation
Critical rate of rise of on-state current
commutation
Thermal resistance, junction to ambient
COUPLER
Critical rate of rise of coupled
input/output voltage
Common mode coupling capacitance
Capacitance (input to output)
Isolation resistance
I
T
= 0 A, V
RM
= V
DM
= V
DRM
dV
IO
/dt
C
CM
10 000
0.01
0.8
10
12
10
11
V/μs
pF
pF
f = 1 MHz, V
IO
= 0 V
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
C
IO
R
IO
R
IO
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Turn-on time
TEST CONDITION
V
RM
= V
DM
= V
DRM
PART
SYMBOL
t
on
MIN.
TYP.
35
MAX.
UNIT
μs
Document Number: 83627
Rev. 2.0, 29-Mar-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IL410, IL4108
Vishay Semiconductors
Optocoupler, Phototriac Output, Zero Crossing,
High dV/dt, Low Input Current
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1.4
10
3
5
T
A
= - 55 °C
10
2
T
A
= 25 °C
T
j
= 25 °C
100 °C
V
F
- Forward Voltage (V)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1
I
T
(mA)
5
I
T
= f(V
T
),
Parameter: T
j
10
1
T
A
= 85 °C
5
10
0
1
10
100
iil410_06
0
1
2
3
4
iil410_03
I
F
- Forward Current (mA)
V
T
(V)
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 4 - Typical Output Characteristics
10 000
If(pk) - Peak LED Current (mA)
τ
Duty Factor
1000
0.005
0.01
0.02
0.05
0.1
0.2
0.5
400
I
TRMS
= f(VT),
R
thJA
= 150 K/W
Device switch
soldered in pcb
or base plate.
300
DF =
τ
/t
I
TRMS
(mA)
10
1
t
200
100
100
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
iil410_04
0
0
iil410_07
20
40
60
80
100
t - LED Pulse Duration (s)
T
A
(°C)
Fig. 5 - Current Reduction
Fig. 2 - Peak LED Current vs. Duty Factor,
150
400
LED - LED Power (mW)
300
I
TRMS
(mA)
100
200
50
100
ITRMS = f(TPIN5), RthJ-PIN5 = 16.5 K/W
Thermocouple measurement must
be performed potentially separated
to A1 and A2. Measuring junction
as near as possible at the case.
0
- 60 - 40 - 20
iil410_05
0
20
40
60
80
100
iil410_08
0
50
60
70
80
90
100
T
A
- Ambient Temperature (°C)
T
PIN5
(°C)
Fig. 6 - Current Reduction
Fig. 3 - Maximum LED Power Dissipation
www.vishay.com
4
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83627
Rev. 2.0, 29-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IL410, IL4108
Optocoupler, Phototriac Output, Zero Crossing,
Vishay Semiconductors
High dV/dt, Low Input Current
10
3
t
gd
= f (I
F
/I
FT
25 °C), V
D
= 200 V
f = 40 to 60 Hz, Parameter: T
j
0.6
0.5
0.4
40 to 60 Hz
Line operation,
P
tot
= f(I
TRMS
)
f
gd
(µs)
10
2
5
T
j
= 25 °C
100 °C
P
tot
(W)
5
10
2
0.3
0.2
0.1
10
1
10
0
iil410_09
5
10
1
0
0
iil410_11
100
200
300
I
F
/I
FT25 °C
Fig. 7 - Typical Trigger Delay Time
I
TRMS
(mA)
Fig. 9 - Power Dissipation 40 Hz to 60 Hz Line Operation
10
3
T
j
= 25 °C
100 °C
12
V
10
T
j
= 25 °C
100 °C
5
V
DINH min.
(V)
I
DINH
(µA)
10
2
8
10
1
5
I
DINH
= f (I
F
/I
FT
25 °C),
V
D
= 600 V, Parameter: T
j
0
iil410_10
6
4
10
0
iil410_12
VDINH min = f (IF/IFT25°C),
parameter: T
j
Device zero voltage
switch can be triggered
only in hatched are
below T
j
curves.
10
0
2
4
6
8
10 12 14 16 18 20
5
10
1
5
10
2
I
F
/I
FT25 °C
I
F
/I
FT25 °C
Fig. 8 - Off-State Current in Inhibited State vs. I
F
/I
FT
25 °C
Fig. 10 - Typical Static Inhibit Voltage Limit
TRIGGER CURRENT VS. TEMPERATURE AND VOLTAGE
The trigger current of the IL410, 4108 has a positive
temperature gradient and also is dependent on the terminal
voltage as shown as the fig. 11.
3.5
3.0
100 °C
2.5
85 °C
2.0
1.5
25 °C
1.0
0.5
0.0
0
21602
For the operating voltage 250 V
RMS
over the temperature
range - 40 °C to 85 °C, the I
F
should be at least 2.3 x of the
I
FT1
(2 mA, max.).
Considering - 30 % degradation over time, the trigger
current minimum is I
F
= 2 x 2.3 x 130 % = 6 mA
I
FT
(mA)
50 °C
50
100
150
200
250
300
350
V
RMS
(V)
Fig. 11 - Trigger Current vs.
Temperature and Operating Voltage (50 Hz)
Document Number: 83627
Rev. 2.0, 29-Mar-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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